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NCV7381DP0G

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24
NCV7381
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16
Table 14. REMOTE WAKEUP DETECTION PARAMETERS
Symbol Parameter Conditions Min Typ Max Unit
dWU
0Detect
Detection time for Wakeup Data_0 symbol 1 4
ms
dWU
IdleDetect
Detection time for Wakeup Idle/Data_1 symbol 1 4
ms
dWU
Timeout
Maximum accepted Wakeup pattern duration 48 140
ms
dWU
Interrupt
Acceptance timeout for interruptions (Note 13) 0.13 1
ms
uV
BAT−WAKE
Minimum supply voltage V
BAT
for remote wakeup
events detection
− 5.5 V
dBDWakeup
Reaction
remote
Reaction time after remote wakeup event 7 35
ms
13.The minimum value is only guaranteed, when the phase that is interrupted was continuously present for at least 870 ns.
Table 15. TEMPERATURE MONITORING PARAMETERS
Symbol Parameter Conditions Min Typ Max Unit
Tjw Thermal warning level 125 140 150 °C
Tjsd Thermal shut−down level 155 165 185 °C
dBDRx10
uRxD
300 mV
uBus
150 mV
dBusRx10 dBusRx01
dBDRx01
Figure 12. Reception Parameters
−150 mV
−300 mV
uBusRx
Data
−uBusRx
Data
100% V
IO
50% V
IO
0% V
IO
dBusRx0
BD
dBusRx1
BD
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17
dBDRxia
dBusActive
uRxD
uBus
dBusRxia
dBusIdle
dBDRxai
uRxEN
−30 mV
dBusRxai
Figure 13. Parameters of Bus Activity Detection
−150 mV
−300 mV
−uBusRx
100% V
IO
50% V
IO
0% V
IO
100% V
IO
50% V
IO
0% V
IO
Table 16. WAKE PIN PARAMETERS
Symbol Parameter Conditions Min Typ Max Unit
uV
BAT−WAKE
Minimum supply voltage V
BAT
for local
wakeup events detection
7 V
uWAKE
TH
Threshold of wake comparator V
BAT
/2 V
dBDWakePulseFilter Wake pulse filter time (spike rejection) 1 500
ms
dBDWakeup
Reaction
local
Reaction time after local wakeup event 14 50
ms
iWAKE
PD
Internal pull−down current uWAKE = 0 V for longer
than dWakePulseFilter
3 11
mA
iWAKE
PU
Internal pull−up current uWAKE = V
BAT
for longer
than dWakePulseFilter
−11 −3
mA
Table 17. INH PIN PARAMETERS
Symbol Parameter Conditions Min Typ Max Unit
uINH1
Not_Sleep
Voltage on INH pin, when signaling
Not_Sleep
iINH = −5 mA
uV
BAT
> 5.5 V
uV
BAT
−
0.6
uV
BAT
−0.27
uV
BAT
−0.1
V
iINH1
LEAK
Leakage current while signaling Sleep −5 5
mA
Table 18. POWER SUPPLY MONITORING PARAMETERS
Symbol Parameter Conditions Min Typ Max Unit
uBDUVV
BAT
V
BAT
under−voltage threshold
4
5.1 V
uBDUVV
CC
V
CC
under−voltage threshold 4 4.5 V
uUV
IO
V
IO
under−voltage threshold 2 2.3 V
uBDUVV
BAT−WAKE
V
BAT
under−voltage threshold for correct
detection of the local wakeup
5 7 V
uUV_HYST Hysteresis of the under−voltage detectors 20 100 200 mV
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18
Table 18. POWER SUPPLY MONITORING PARAMETERS
Symbol UnitMaxTypMinConditionsParameter
dBDUVV
CC
V
CC
Undervoltage detection time 150 350 750 ms
dBDUVV
IO
V
IO
Undervoltage detection time 150 350 750 ms
dBDUVV
BAT
V
BAT
Undervoltage detection time 350 750 1500
ms
dBDRV
CC
V
CC
Undervoltage recovery time 1.5 4.5 ms
dBDRV
IO
V
IO
Undervoltage recovery time 1 ms
dBDRV
BAT
V
BAT
Undervoltage recovery time 1 ms
Table 19. HOST INTERFACE PARAMETERS
Symbol Parameter Conditions Min Typ Max Unit
dBDModeChange EN and STBN level filtering time for
operating mode transition
21 65
ms
dGo−to−Sleep Go to Sleep mode timeout 14 33
ms
dReactionTime
ERRN
Reaction time on ERRN pin
Error detected 33
ms
Wakeup detected or
Mode changed
1
ms
Digital Input Signals
Table 20. DIGITAL INPUT SIGNALS VOLTAGE THRESHOLDS (Pins EN, STBN, BGE, TxEN)
Symbol Parameter Conditions Min Typ Max Unit
uV
DIG−IN−LOW
Low level input voltage
uV
DIG
= uV
IO
−0.3 0.3*V
IO
V
uV
DIG−IN−HIGH
High level input voltage 0.7*V
IO
5.5 V
Table 21. EN PIN PARAMETERS
Symbol Parameter Conditions Min Typ Max Unit
R
PD
_EN Pull−down resistance 50 110 200
kW
iEN
IL
Low level input current uEN = 0 V −1 0 1
mA
dEN
STAT
EN toggling period for status register
read−out
2 20
ms
dEN
STAT_L
,
dEN
STAT_H
Duration of EN Low and High level for
status register read−out
1
ms
dEN_ERRN Delay from EN falling edge to ERRN
showing valid signal during status re-
gister read−out
1
ms
Table 22. STBN PIN PARAMETERS
Symbol Parameter Conditions Min Typ Max Unit
R
PD
_STBN Pull−down resistance 50 110 200
kW
iSTBN
IL
Low level input current uSTBN = 0 V −1 0 1
mA
Table 23. BGE PIN PARAMETERS
Symbol Parameter Conditions Min Typ Max Unit
R
PD
_BGE Pull−down resistance 200 320 450
kW
iBGE
IL
Low level input current uBGE = 0 V −1 0 1
mA
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NCV7381DP0G

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Manufacturer:
ON Semiconductor
Description:
IC TRANSCEIVER LINEAR 16SSOP
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