NXP Semiconductors
ACTT6G-800E
AC Thyristor Triac power switch
ACTT6G-800E All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet 15 August 2014 7 / 13
9. Characteristics
Table 6. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V
D
= 12 V; I
T
= 100 mA; LD+ G+;
T
j
= 25 °C; Fig. 8
- - 10 mA
V
D
= 12 V; I
T
= 100 mA; LD+ G-;
T
j
= 25 °C; Fig. 8
- - 10 mA
I
GT
gate trigger current
V
D
= 12 V; I
T
= 100 mA; LD- G-;
T
j
= 25 °C; Fig. 8
- - 10 mA
V
D
= 12 V; I
G
= 100 mA; LD+ G+;
T
j
= 25 °C; Fig. 9
- - 30 mA
V
D
= 12 V; I
G
= 100 mA; LD+ G-;
T
j
= 25 °C; Fig. 9
- - 40 mA
I
L
latching current
V
D
= 12 V; I
G
= 100 mA; LD- G-;
T
j
= 25 °C; Fig. 9
- - 30 mA
I
H
holding current V
D
= 12 V; T
j
= 25 °C; Fig. 10 - - 25 mA
V
T
on-state voltage I
T
= 8 A; T
j
= 25 °C; Fig. 11 - - 1.7 V
V
D
= 12 V; I
T
= 100 mA; T
j
= 25 °C;
Fig. 12
- 0.8 1 VV
GT
gate trigger voltage
V
D
= 400 V; I
T
= 100 mA; T
j
= 125 °C;
Fig. 12
0.2 0.45 - V
V
D
= 800 V; T
j
= 25 °C - - 10 µAI
D
off-state current
V
D
= 800 V; T
j
= 125 °C - - 0.5 mA
V
CL
clamping voltage I
CL
= 0.1 mA; t
p
= 1 ms; T
j
= 25 °C 850 - - V
Dynamic characteristics
dV
D
/dt rate of rise of off-state
voltage
V
DM
= 536 V; T
j
= 125 °C; (V
DM
= 67%
of V
DRM
); exponential waveform; gate
open circuit; Fig. 13
500 - - V/µs
V
D
= 400 V; T
j
= 125 °C; I
T(RMS)
= 6 A;
dV
com
/dt = 20 V/µs; (snubberless
condition); gate open circuit; Fig. 14;
Fig. 15
3.5 - - A/ms
V
D
= 400 V; T
j
= 125 °C; I
T(RMS)
= 6 A;
dV
com
/dt = 10 V/µs; gate open circuit;
Fig. 14; Fig. 15
5 - - A/ms
dI
com
/dt rate of change of
commutating current
V
D
= 400 V; T
j
= 125 °C; I
T(RMS)
= 6 A;
dV
com
/dt = 1 V/µs; gate open circuit;
Fig. 14; Fig. 15
10 - - A/ms
