APT100GT120JRDQ4

052-6290 Rev D 1-2011
Typical Performance Curves APT100GT120JRDQ4
STATIC ELECTRICAL CHARACTERISTICS
DYNAMIC CHARACTERISTICS
MAXIMUM RATINGS All Ratings: T
C
= 25°C unless otherwise specifi ed.
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
Symbol Characteristic / Test Conditions APT100GT120JRDQ4 Unit
I
F(AV)
Maximum Average Forward Current (T
C
= 88°C, Duty Cycle = 0.5)
60
Amps
I
F(RMS)
RMS Forward Current (Square wave, 50% duty) 73
I
FSM
Non-Repetitive Forward Surge Current (T
J
= 45°C, 8.3 ms)
540
Symbol Characteristic / Test Conditions Min Type Max Unit
V
F
Forward Voltage
I
F
= 75A
2.8
Volts
I
F
= 150A
3.48
I
F
= 75A, T
J
= 125°C
2.17
Symbol Characteristic Test Conditions Min Typ Max Unit
t
rr
Reverse Recovery Time
I
F
= 1A, di
F
/dt = -100A/µs ,
V
R
= 30V, T
J
= 25°C
-
60
-
ns
t
rr
Reverse Recovery Time
I
F
= 60A, di
F
/dt = -200A/µs
V
R
= 800V, T
C
= 25°C
-
265
-
Q
rr
Reverse Recovery Charge -
560
- nC
I
RRM
Maximum Reverse Recovery Current -
5
- Amps
t
rr
Reverse Recovery Time
I
F
= 60A, di
F
/dt = -200A/µs
V
R
= 800V, T
C
= 125°C
-
350
-ns
Q
rr
Reverse Recovery Charge -
2890
-
nC
I
RRM
Maximum Reverse Recovery Current -
13
-
Amps
t
rr
Reverse Recovery Time
I
F
= 60A, di
F
/dt = -1000A/µs
V
R
= 800V, T
C
= 125°C
-
150
-
ns
Q
rr
Reverse Recovery Charge -
4720
-nC
I
RRM
Maximum Reverse Recovery Current -
40
- Amps
10
-5
10
-4
10
-3
10
-2
10
-1
1.0
RECTANGULAR PULSE DURATION (seconds)
FIGURE 24. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
Z
JC
, THERMAL IMPEDANCE (°C/W)
0.60
0.50
0.40
0.30
0.20
0.10
0
0.5
SINGLE PULSE
0.1
0.3
0.7
0.05
Peak T
J
= P
DM
x Z
θJC
+
T
C
Duty Factor D =
t
1
/
t
2
t
2
t
1
P
DM
Note:
D = 0.9
052-6290 Rev D 1-2011
Typical Perfromance Curves APT100GT120JRDQ4
400
350
300
250
200
150
100
50
0
50
45
40
35
30
25
20
15
10
5
0
Duty cycle = 0.5
T
J
= 175°C
90
80
70
60
50
40
30
20
10
0
T
J
, JUNCTION TEMPERATURE (°C) Case Temperature (°C)
Figure 29. Dynamic Parameters vs. Junction Temperature Figure 30. Maximum Average Forward Current vs. CaseTemperature
V
R
, REVERSE VOLTAGE (V)
Figure 31. Junction Capacitance vs. Reverse Voltage
200
180
160
140
120
100
80
60
40
20
0
7000
6000
5000
4000
3000
2000
1000
0
V
F
, ANODE-TO-CATHODE VOLTAGE (V) -di
F
/dt, CURRENT RATE OF CHANGE(A/µs)
Figure 25. Forward Current vs. Forward Voltage Figure 26. Reverse Recovery Time vs. Current Rate of Change
-di
F
/dt, CURRENT RATE OF CHANGE (A/µs) -di
F
/dt, CURRENT RATE OF CHANGE (A/µs)
Figure 27. Reverse Recovery Charge vs. Current Rate of Change Figure 28. Reverse Recovery Current vs. Current Rate of Change
Q
rr
, REVERSE RECOVERY CHARGE I
F
, FORWARD CURRENT
(nC) (A)
I
RRM
, REVERSE RECOVERY CURRENT t
rr
, REVERSE RECOVERY TIME
(A) (ns)
T
J
= 125°C
V
R
= 800V
T
J
= 125°C
V
R
= 800V
T
J
= 125°C
V
R
= 800V
T
J
= 175°C
T
J
= -55°C
T
J
= 25°C
T
J
= 125°C
0 1 2 3 4 0 200 400 600 800 1000 1200
0 200 400 600 800 1000 1200 0 200 400 600 800 1000 1200
30A
60A
120A
120A
30A
60A
t
rr
Q
rr
Q
rr
t
rr
I
RRM
1.2
1.0
0.8
0.6
0.4
0.2
0.0
350
300
250
200
150
100
50
0
C
J
, JUNCTION CAPACITANCE K
f
, DYNAMIC PARAMETERS
(pF) (Normalized to 1000A/µs)
I
F(AV)
(A)
0 25 50 75 100 125 150 25 50 75 100 125 150 175
1 10 100 200
120A
60A
30A
052-6290 Rev D 1-2011
APT100GT120JRDQ4
SOT-227 (ISOTOP
®
) Package Outline
31.5 (1.240)
31.7 (1.248)
7.8 (.307)
8.2 (.322)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
14.9 (.587)
15.1 (.594)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
0.75 (.030)
0.85 (.033)
12.6 (.496)
12.8 (.504)
25.2 (0.992)
25.4 (1.000)
1.95 (.077)
2.14 (.084)
* Emitter/Anode Collector/Cathode
Gate
*
r = 4.0 (.157)
(2 places)
4.0 (.157)
4.2 (.165)
(2 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
3.3 (.129)
3.6 (.143)
* Emitter/Anode
Emitter/Anode terminals are
shorted internally. Current
handling capability is equal
for either Emitter/Anode terminal.
APT10035LLL
4
3
1
2
5
5
Zero
1
2
3
4
di
F
/dt - Rate of Diode Current Change Through Zero Crossing.
I
F
- Forward Conduction Current
I
RRM
- Maximum Reverse Recovery Current.
t
rr
- Reverse
Recovery Time, measured from zero crossing where diode
Q
rr
- Area Under the Curve Defined by I
RRM
and t
rr
.
current goes from positive to negative, to the point at which the straight
line through I
RRM
and 0.25 I
RRM
passes through zero.
0.25 I
RRM
PEARSON 2878
CURRENT
TRANSFORMER
di
F
/dt Adjust
30μH
D.U.T.
+18V
0V
V
r
t
rr
/
Q
rr
Waveform
Figure 32, Diode Test Circuit
Figure 32, Diode Reverse Recovery Waveform and De nitions
Dimensions in Millimeters and (Inches)

APT100GT120JRDQ4

Mfr. #:
Manufacturer:
Microchip / Microsemi
Description:
IGBT Modules FG, IGBT-COMBI,1200V,100A, SOT-227
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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