RJK6002DPD
REJ03G1483-0200 Rev.2.00 Dec 19, 2008
Page 2 of 6
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Drain to source breakdown voltage V
(BR)DSS
600 — — V I
D
= 10 mA, V
GS
= 0
Zero gate voltage drain current I
DSS
— — 1 µA V
DS
= 600 V, V
GS
= 0
Gate to source leak current I
GSS
— — ±0.1 µA V
GS
= ±30 V, V
DS
= 0
Gate to source cutoff voltage V
GS(off)
3.0 — 4.5 V V
DS
= 10 V, I
D
= 1 mA
Static drain to source on state
resistance
R
DS(on)
— 5.7 6.8 Ω I
D
= 1 A, V
GS
= 10 V
Note4
Input capacitance Ciss — 165 — pF
Output capacitance Coss — 20 — pF
Reverse transfer capacitance Crss — 2.5 — pF
V
DS
= 25 V
V
GS
= 0
f = 1 MHz
Turn-on delay time t
d(on)
— 28 — ns
Rise time t
r
— 17 — ns
Turn-off delay time t
d(off)
— 47 — ns
Fall time t
f
— 20 — ns
I
D
= 1 A
V
GS
= 10 V
R
L
= 300 Ω
Rg = 10 Ω
Total gate charge Qg — 6.2 — nC
Gate to source charge Qgs — 1.1 — nC
Gate to drain charge Qgd — 3.6 — nC
V
DD
= 480 V
V
GS
= 10 V
I
D
= 2 A
Body-drain diode forward voltage V
DF
— 0.87 1.45 V I
F
= 2 A, V
GS
= 0
Note4
Body-drain diode reverse recovery time t
rr
— 260 — ns
I
F
= 2 A, V
GS
= 0
di
F
/dt = 100 A/µs
Notes: 4. Pulse test
