PAM8902H
Document number: DSxxxxx Rev. 1 - 0
4 of 12
www.diodes.com
December 2012
© Diodes Incorporated
PAM8902H
Product Line o
Diodes Incorporated
Thermal Information
Parameter Symbol Package Maximum Unit
Thermal Resistance
(Junction to Ambient)
θ
JA
CSP 90
°C/W
QFN4x4-16 52
Thermal Resistance
(Junction to Case)
θ
JC
CSP 72
°C/W
QFN4x4-16 30
Electrical Characteristics (@T
A
= +25°C, V
DD
= 3.6V, C
L
= 1µF, V
SET
Float, unless otherwise specified.)
Symbol Parameter Conditions Min Typ Max Unit
V
DD
Input Voltage 2.5 5.5 V
I
Q
Quiescent Current
EN > 1.2V, VSET = High 30 48
mA
EN > 1.2V, VSET = Floating 10 18
EN > 1.2V, VSET = GND 5 12
I
SD
Shutdown Current EN = 0V 0.1 1.0 µA
T
WU
Wake-Up Time EN From Low to High 40 mS
V
EH
Chip Enable 1.2
V
V
EL
Chip Disable 0.4
V
H
GSET/VSET High
V
DD
-0.5
V
DD
V
V
F
GSET/VSET Floating 1
V
DD
-1
V
L
GSET/VSET Low 0 0.5
UVLO Under Voltage Lockout Threshold
V
DD
From High to Low
2.2
V
UVLO
H
Under Voltage Lockout Hysteresis
V
DD
From Low to High
0.2
OTP Thermal Shutdown Threshold 150 °C
OTP
H
Thermal Shutdown Lockout Hysteresis 30 °C
Boost Converter
V
O
1
Output Voltage
VSET = GND, No Load 7.2 8.0 8.8 V
V
O
2
VSET = NC, No Load 10.8 12.0 13.2 V
V
O
3
VSET = AVDD, No Load 16 17.5 19 V
C
L
Current Limit Average Input Current 1.0 A
R
LS
Low Side MOSFET R
DS(ON)
I
O
= 50mA
0.5 Ω
f
OSCB
Boost Switching Frequency 1.1 1.5 1.9 MHz
Class-D
f
OSCD
Class-D Amplifier Switching Frequency Input AC-GND 225 375 475 KHz
CMRR Common Mode Reject Ratio
V
IN
= ±100mV, V
DD
= 3.6V
60 dB
V
OS
Output Offset Voltage Output Offset Voltage 5 50 mV
R
P
R
DS(ON)
High Side 1.5 Ω
Low Side 0.6 Ω
A
V
1
Closed-Loop Voltage Gain
G
SET
= AVDD, V
O
= 1V
RMS
32.5
dB
A
V
2 G
SET
= AVDD, V
O
= 1V
RMS
26
A
V
3 G
SET
= AVDD, V
O
= 1V
RMS
21
PSRR Power Supply Reject Ratio
200m V
PP
Supply Ripple @ 217Hz
70 dB
THD+N Total Harmonice Distortion Plus Noise
V
O
= 5V
RMS
0.3 %
SNR Signal to Noise Ratio Input AC Ground, A-Weighting 90 dB
