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PD20015C

P1-P3P4-P6P7-P9
April 2009 Doc ID 14136 Rev 2 1/9
9
PD20015C
RF power transistor, LdmoST family
Features
■ Excellent thermal stability
■ Common source configuration
■ P
OUT
= 15 W with 11 dB gain @ 2 GHz / 13.6 V
■ BeO free package
■ ESD protection
■ In compliance with the 2002/95/EC european
directive
Description
The PD20015C is a common source
N-channel, enhancement-mode lateral field-effect
RF power transistor. It is designed for high gain,
broadband commercial and industrial
applications. It operates at 13.6 V in common
source mode at frequencies of up to 2 GHz.
PD20015C boasts the excellent gain, linearity and
reliability of ST’s latest LDMOS technology.
PD20015C’s superior linearity performance
makes it an ideal solution for mobile application.
Figure 1. Pin connection
M243
Epoxy sealed
1. Drain
2. Gate
3. Source
1
3
2
www.st.com
Contents PD20015C
2/9 Doc ID 14136 Rev 2
Contents
1 Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Static . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.2 Dynamic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.3 ESD protection characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3 Typical performance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
PD20015C Electrical data
Doc ID 14136 Rev 2 3/9
1 Electrical data
1.1 Maximum ratings
T
CASE
= 25 °C
1.2 Thermal data
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
V
(BR)DSS
Drain-source voltage 40 V
V
GS
Gate-source voltage - 0.5 to 15 V
I
D
Drain current 7 A
P
DISS
Power dissipation (@ T
C
= 70 °C) 93 W
T
J
Max. operating junction temperature 200 °C
T
STG
Storage temperature -65 to +150 °C
Table 3. Thermal data
Symbol Parameter Value Unit
R
thJC
Junction - case thermal resistance 1.4 °C/W
P1-P3P4-P6P7-P9

PD20015C

Mfr. #:
Buy PD20015C
Manufacturer:
STMicroelectronics
Description:
RF MOSFET Transistors N-Ch, 13.6V 15W LDMOST family
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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