MMBT3906FA-7B

MMBT3906FA
Document number: DS36017 Rev. 1 - 2
4 of 7
www.diodes.com
July 2013
© Diodes Incorporated
MMBT3906FA
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
BV
CBO
-40
V
I
C
= -10µA, I
E
= 0
Collector-Emitter Breakdown Voltage (Note 8)
BV
CEO
-40
V
I
C
= -1.0mA, I
B
= 0
Emitter-Base Breakdown Voltage
BV
EBO
-6.0
V
I
E
= -10µA, I
C
= 0
Collector Cutoff Current
I
CEX
-50 nA
V
CE
= -30V, V
EB(OFF)
= -3.0V
Collector Cutoff Current
I
CBO
-50 nA
V
CB
= -30V, I
E
= 0
Base Cutoff Current
I
BL
-50 nA
V
CE
= -30V, V
EB(OFF)
= -3.0V
ON CHARACTERISTICS (Note 8)
DC Current Gain
h
FE
60
80
100
60
30
300
I
C
= -100µA, V
CE
= -1.0V
I
C
= -1.0mA, V
CE
= -1.0V
I
C
= -10mA, V
CE
= -1.0V
I
C
= -50mA, V
CE
= -1.0V
I
C
= -100mA, V
CE
= -1.0V
Collector-Emitter Saturation Voltage
V
CE(sat)
-0.25
-0.40
V
I
C
= -10mA, I
B
= -1.0mA
I
C
= -50mA, I
B
= -5.0mA
Base-Emitter Saturation Voltage
V
BE(sat)
-0.65
-0.85
-0.95
V
I
C
= -10mA, I
B
= -1.0mA
I
C
=- 50mA, I
B
= -5.0mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
C
obo
4.5 pF
V
CB
= -5.0V, f = 1.0MHz, I
E
= 0
Input Capacitance
C
ibo
10 pF
V
EB
= -0.5V, f = 1.0MHz, I
C
= 0
Input Impedance
h
ie
2.0 12
k
V
CE
= -10V, I
C
= -1.0mA,
f = 1.0kHz
Voltage Feedback Ratio
h
re
0.1 10 x 10
-4
Small Signal Current Gain
h
fe
100 400
Output Admittance
h
oe
3.0 60 µS
Current Gain-Bandwidth Product
f
T
300
MHz
V
CE
= -20V, I
C
= -10mA,
f = 100MHz
SWITCHING CHARACTERISTICS
Delay Time
t
d
35 ns
V
CC
= -3.0V, I
C
= -10mA,
V
BE(off)
= 0.5V, I
B1
= -1.0mA
Rise Time
t
r
35 ns
Storage Time
t
s
225 ns
V
CC
= -3.0V, I
C
= -10mA,
I
B1
= I
B2
= -1.0mA
Fall Time
t
f
75 ns
Note: 8. Measured under pulsed conditions. Pulse width 300µs. Duty cycle 2%.
MMBT3906FA
Document number: DS36017 Rev. 1 - 2
5 of 7
www.diodes.com
July 2013
© Diodes Incorporated
MMBT3906FA
Typical Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
0
0.04
0.08
0.12
0.16
0.20
01 2 3 45
-V , COLLECTOR-EMITTER VOLTAGE (V)
CE
Fig. 4 Typical Collector Current
vs. Collector-Emitter Voltage
-I ,
C
O
LLE
C
T
O
R
C
U
R
R
EN
T
(A)
C
I = -2mA
B
I = -0.2mA
B
I = -0.4mA
B
I = -0.6mA
B
I = -0.8mA
B
I = -1.6mA
B
I = -1.4mA
B
I = -1.2mA
B
I = -1.8mA
B
I = -1mA
B
110100
-I , COLLECTOR CURRENT (mA)
C
Fig. 5 Typical DC Current Gain vs. Collector Current
0
50
100
150
200
250
300
350
400
h,
D
C
C
U
R
R
E
N
T
G
A
I
N
FE
T = -55°C
A
T = 25°C
A
T = 150°C
A
T = 125°C
A
T = 85°C
A
V = 1V
CE
1101001,000
-I , COLLECTOR CURRENT (mA)
C
Fig. 6 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
0.01
0.1
1
-V ,
C
O
LLE
C
T
O
R
-EMI
T
T
E
R
SATURATION
CE(SAT)
VOLTAGE (V)
T = -55°C
A
I/I = 10
CB
T = 25°C
A
T = 125°C
A
T = 150°C
A
T = 85°C
A
0.1 1 10 100 1,000
-I , COLLECTOR CURRENT (mA)
C
Fig. 7 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
0.01
0.1
1
-V ,
C
O
LLE
C
T
O
R
-E
M
I
T
T
E
R
SATURATION
CE(SAT)
VOLTAGE (V)
T = -55°C
A
I/I = 20
CB
T = 25°C
A
T = 125°C
A
T = 150°C
A
T = 85°C
A
0.1 1 10 100 1,000
-I , COLLECTOR CURRENT (mA)
C
Fig. 8 Typical Base-Emitter Saturation Voltage
vs. Collector Current
0.2
0.4
0.6
0.8
1.0
1.2
-V , BASE-EMI
T
T
E
R
T
U
R
N-
O
N V
O
L
T
A
G
E (V)
BE(ON)
T = 85°C
A
T = 25°C
A
T = -55°C
A
T = 125°C
A
T = 150°C
A
Gain = 10
0.1 1 10 100 1,000
-I , COLLECTOR CURRENT (mA)
C
Fig. 9 Typical Base-Emitter Saturation Voltage
vs. Collector Current
0.2
0.4
0.6
0.8
1.0
1.2
-V , BASE-EMI
T
T
E
R
SA
T
U
R
A
T
I
O
N
V
O
L
T
A
G
E (V)
BE(SAT)
T = 85°C
A
T = 25°C
A
T = -55°C
A
T = 125°C
A
T = 150°C
A
Gain = 10
MMBT3906FA
Document number: DS36017 Rev. 1 - 2
6 of 7
www.diodes.com
July 2013
© Diodes Incorporated
MMBT3906FA
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X2-DFN0806-3
Dim Min Max Typ
A 0.375 0.40 0.39
A1 0 0.05 0.02
A3 - - 0.10
b 0.10 0.20 0.15
D 0.55 0.65 0.60
D1 0.35 0.45 0.40
E 0.75 0.85 0.80
E1 0.20 0.30 0.25
e - - 0.35
K - - 0.20
L 0.20 0.30 0.25
All Dimensions in mm
Dimensions
Value
(in mm)
C 0.350
X 0.200
X1 0.450
X2 0.550
Y 0.375
Y1 0.475
Y2 1.000
X1
X2
Y2
Y1
Y (2x)
X (2x)
C
A
A3
Seating Plane
A1
D
E
b (2x)
L (2x)
e
D1
E1
Pin#1
R0.075
K

MMBT3906FA-7B

Mfr. #:
Manufacturer:
Diodes Incorporated
Description:
Bipolar Transistors - BJT 40V PNP SM Trans 435mW -40V Vceo
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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