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DMP2540UCB9-7

P1-P3P4-P6
DMP2540UCB9
Document number: DS35611 Rev. 5 - 2
1 of 6
www.diodes.com
May 2015
© Diodes Incorporated
DMP2540UCB9
NEW PROD UCT
ADVA N C E INF O RMA TION
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary (Typ. @ V
GS
= -4.5V, T
A
= +25°C)
V
DSS
Q
g
I
D
-25V
4.8nC
-5.2A
Description and Applications
This new generation MOSFET is designed to minimize the on-
state resistance (R
DS(on)
) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Battery Management
Load Switch
Battery Protection
Features and Benefits
LD-MOS Technology with the Lowest Figure of Merit:
R
DS(on)
= 33mΩ to Minimize On-State Losses
Q
g
= 4.8nC for Ultra-Fast Switching
V
gs(th)
= -0.6V typ. for a Low Turn-On Potential
CSP with Footprint 1.5mm × 1.5mm
Height = 0.62mm for Low Profile
ESD = 6kV HBM Protection of Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: U-WLB1515-9
Terminal Connections: See Diagram Below
Weight: 0.0018 grams (Approximate)
Ordering Information (Note 4)
Part Number
Case
Packaging
DMP2540UCB9-7
U-WLB1515-9
3,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year
2011
2012
2013
2014
2015
2016
2017
Code
Y
Z
A
B
C
D
E
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
Top-View
Pin Configuration
3W
YM
3W = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)
G D S
D D S
D S S
Equivalent Circuit
ESD PROTECTED TO 6kV
Source
Gate
Protection
Diode
Gate
Drain
U-WLB1515-9
DMP2540UCB9
Document number: DS35611 Rev. 5 - 2
2 of 6
www.diodes.com
May 2015
© Diodes Incorporated
DMP2540UCB9
NEW PROD UCT
ADVA N C E INF O RMA TION
Maximum Ratings (@T
A
= +25°C unless otherwise specified.)
Characteristic
Symbol
Value
Units
Drain-Source Voltage
V
DSS
-25
V
Gate-Source Voltage
V
GSS
-6
V
Continuous Drain Current (Note 5) V
GS
= -4.5V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
-4.0
-3.0
A
Continuous Drain Current (Note 6) V
GS
= -4.5V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
-5.2
-4.0
A
Pulsed Drain Current (Pulse duration 10μs, duty cycle ≤1%)
I
DM
-30
A
Continuous Source Pin Current (Note 6)
I
S
-2.0
A
Pulsed Source Pin Current (Pulse duration 10μs, duty cycle ≤1%)
I
SM
-15
A
Continuous Gate Clamp Current (Note 5)
I
G
-0.6
A
Pulsed Gate Clamp Current (Pulse duration 10μs, duty cycle ≤1%)
I
GM
-8
A
Thermal Characteristics (@T
A
= +25°C unless otherwise specified.)
Characteristic
Symbol
Value
Units
Total Power Dissipation (Note 5)
P
D
1.0
W
Total Power Dissipation (Note 6)
P
D
1.8
W
Thermal Resistance, Junction to Ambient (Note 5)
R
JA
126.8
°C/W
Thermal Resistance, Junction to Ambient (Note 6)
R
JA
69
°C/W
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150
°C
Electrical Characteristics (@T
A
= +25°C unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
-25
-
-
V
V
GS
= 0V, I
D
= -250μA
Zero Gate Voltage Drain Current @T
C
= +25°C
I
DSS
-
-
-1
μA
V
DS
= -20V, V
GS
= 0V
Gate-Source Leakage
I
GSS
-
-
-100
nA
V
GS
= -6V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
-0.4
-0.6
-1.1
V
V
DS
= V
GS
, I
D
= -250μA
Static Drain-Source On-Resistance
R
DS (ON)
-
33
40
mΩ
V
GS
= -4.5V, I
D
= - 2A
42
50
V
GS
= -2.5V, I
D
= -2A
52
60
V
GS
= -1.8V, I
D
= -2A
Forward Transfer Admittance
|Y
fs
|
-
12
-
S
V
DS
= -10V, I
D
= -2A
Diode Forward Voltage (Note 5)
V
SD
-
-0.7
-1
V
V
GS
= 0V, I
S
= -2A
Reverse Recovery Charge
Q
rr
-
100
-
nC
V
dd
= –9.5V, I
F
= –2A, di/dt =
200A/μs
Reverse Recovery Time
t
rr
-
130
-
ns
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
-
342
450
pF
V
DS
= -10V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
C
oss
-
174
225
pF
Reverse Transfer Capacitance
C
rss
-
70
90
pF
Series Gate Resistance
R
G
28
35
Ω
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
Total Gate Charge (4.5V)
Q
g
-
4.8
6.0
nC
V
GS
= -4.5V, V
DS
= -10V,
I
D
= -2A
Gate-Source Charge
Q
gs
-
0.5
-
nC
Gate-Drain Charge
Q
gd
-
1.0
-
nC
Turn-On Delay Time
t
D(on)
-
11
-
ns
V
DD
= -10V, V
GS
= -4.5V,
I
DS
= -2A, R
G
= 2Ω,
Turn-On Rise Time
t
r
-
12
-
ns
Turn-Off Delay Time
t
D(off)
-
56
-
ns
Turn-Off Fall Time
t
f
-
42
-
ns
Notes: 5. Device mounted on FR-4 PCB with minimum recommended pad layout.
6. Device mounted on FR4 material with 1-inch
2
(6.45-cm
2
), 2-oz. (0.071-mm thick) Cu
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
DMP2540UCB9
Document number: DS35611 Rev. 5 - 2
3 of 6
www.diodes.com
May 2015
© Diodes Incorporated
DMP2540UCB9
NEW PROD UCT
ADVA N C E INF O RMA TION
0
2
4
6
8
10
0 0.4 0.8 1.2 1.6 2.0
-I , DRAIN CURRENT (A)
D
-V , DRAIN -SOURCE VOLTAGE(V)
Fig. 1 Typical Output Characteristics
DS
V = 8.0V
GS
V = 4.5V
GS
V = 2.5V
GS
V = 2.0V
GS
V = 1.5V
GS
V = 1.2V
GS
V = 1.8V
GS
0
2
4
6
8
10
0 0.5 1.0 1.5 2.0
-V , GATE-SOURCE VOLTAGE (V)
GS
Fig. 2 Typical Transfer Characteristics
-I , DRAIN CURRENT (A)
D
T = 150 C
A
T = 125 C
A
T = 85 C
A
T = 25 C
A
T = -55 C
A
V = -5.0V
DS
0
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0.09
0.10
1 2 3 4 5 6 7 8 9 10
-I , DRAIN SOURCE CURRENT
Fig. 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
D
R ,DRAIN-SOURCE ON-RESISTANCE( )
DS(ON)
0.02
0.03
0.04
0.05
0.06
0 2 4 6 8 10
-I , DRAIN SOURCE CURRENT (A)
Fig. 4 Typical On-Resistance vs.
Drain Current and Temperature
D
R , DRAIN-SOURCE ON-RESISTANCE( )
DS(ON)
T = -55 C
A
T = 25 C
A
T = 85 C
A
T = 125 C
A
T = 150 C
A
V = -4.5V
GS
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
J
Fig. 5 On-Resistance Variation with Temperature
0.5
0.7
0.9
1.1
1.3
1.5
1.7
R , DRAIN-SOURCE
ON-RESISTANCE (Normalized)
DS(ON)
0
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0.09
0.10
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
J
Fig. 6 On-Resistance Variation with Temperature
R , DRAIN-SOURCE ON-RESISTANCE ( )
DS(on)
V = 5V
I = A
GS
D
-4.
-4
V = -2.5V
I = A
GS
D
-2
P1-P3P4-P6

DMP2540UCB9-7

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Description:
Darlington Transistors MOSFET P-Ch Enh Mode FET 40mOhm -25V -5.2A
Lifecycle:
New from this manufacturer.
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