ZXMN3B14F
SEMICONDUCTORS
ISSUE 2 - JANUARY 2006
4
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
STATIC
Drain-Source Breakdown Voltage V
(BR)DSS
30 V I
D
= 250A, V
GS
=0V
Zero Gate Voltage Drain Current I
DSS
1 AV
DS
=30V,V
GS
=0V
Gate-Body Leakage I
GSS
100 nA V
GS
=⫾12V, V
DS
=0V
Gate-Source Threshold Voltage V
GS(th)
0.7 V I
D
= 250A, V
DS
=V
GS
Static Drain-Source On-State
Resistance
(1)
R
DS(on)
0.080
0.140
⍀
⍀
V
GS
=4.5V,I
D
=3.1A
V
GS
=2.5V,I
D
=2.2A
Forward Transconductance
(1) (3)
g
fs
8.5 S V
DS
=15V,I
D
=3.1A
DYNAMIC
(3)
Input Capacitance C
iss
568 pF
V
DS
=15V,V
GS
=0V
f=1MHz
Output Capacitance C
oss
101 pF
Reverse Transfer Capacitance C
rss
66 pF
SWITCHING
(2) (3)
Turn-On-Delay Time t
d(on)
3.6 ns
V
DD
=15V,V
GS
=4.5V
I
D
=1A
R
G
≅ 6.0⍀
Rise Time t
r
4.9 ns
Turn-Off Delay Time t
d(off)
17.3 ns
Fall Time t
f
9.8 ns
Total Gate Charge Q
g
6.7 nC
V
DS
=15V,V
GS
=4.5V
I
D
=3.1A
Gate-Source Charge Q
gs
1.4 nC
Gate Drain Charge Q
gd
1.8 nC
SOURCE-DRAIN DIODE
Diode Forward Voltage
(1)
V
SD
0.82 0.95 V T
j
=25°C, I
S
=3.1A,
V
GS
=0V
Reverse Recovery Time
(3)
t
rr
10.8 ns
T
j
=25°C, I
F
=1.6A,
di/dt=100A/s
Reverse Recovery Charge
(3)
Q
rr
4.54 nC
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated)
NOTES
(1) Measured under pulsed conditions. Pulse width ⱕ 300s; duty cycle ⱕ2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
