DTC114ESATP

DTC114EM / DTC114EE / DTC114EUA
Transistors
DTC114EKA / DTC114ESA
Rev.B 1/3
100mA / 50V Digital transistors
(with built-in resistors)
DTC114EM / DTC114EE / DTC114EUA /
DTC114EKA / DTC114ESA
zApplications
Inverter, Interface, Driver
zFeatures
1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see
equivalent circuit).
2) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also
have the advantage of almost completely eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation, making the device design easy.
zStructure
NPN epitaxial planar silicon transistor (Resistor built-in type)
zDimensions (Unit : mm)
Abbreviated symbol : 24 Abbreviated symbol : 24
Abbreviated symbol : 24
Abbreviated symbol : 24
Abbreviated symbol : C114ES
DTC114EM
DTC114EE
Each lead has same dimensions Each lead has same dimensions
Each lead has same dimensions
Each lead has same dimensions
DTC114EUA
(1) IN
(2) GND
(3) OUT
ROHM : VMT3
(1) GND
(2) IN
(3) OUT
ROHM : EMT3
1.6
0.7
0.15
0.1Min.
0.55
0.2
1.6
1.0
0.3
0.8
(
2
)
0.5
0.5
(
3
)
0.2
(
1
)
(1) GND
(2) OUT
(3) IN
ROHM : SPT
EIAJ : SC-72
DTC114ESA
(1) GND
(2) IN
(3) OUT
ROHM : SMT3
EIAJ : SC-59
DTC114EKA
(1) GND
(2) IN
(3) OUT
ROHM : UMT3
EIAJ : SC-70
(3)
0.32
0.8
1.2
0.13
0.5
0.22
0.4 0.4
1.2
0.8
0.2
0.2
(
2
)
(
1
)
0.2
0.15
0.1Min.
0.9
0.7
1.25
2.1
0.3
(
3
)
0.65
(
2
)
2.0
1.3
(
1
)
0.65
0.45
2.5
(1) (2) (3)
(15Min.)
5.0
3.0
3Min.
0.45
0.5
4.0 2.0
(
2
)
(
1
)
2.8
1.6
0.4
(
3
)
2.9
1.9
0.95 0.95
0.8
0.15
0.3Min.
1.1
DTC114EM / DTC114EE / DTC114EUA
Transistors
DTC114EKA / DTC114ESA
Rev.B 2/3
zPackaging specifications zEquivalent circuit
TL
UMT3EMT3 SMT3 SPT
DTC114EE
DTC114EM
Part No.
DTC114EUA
3000
T2L
VMT3
8000
T106
3000
T146
3000
TP
5000
DTC114EKA
DTC114ESA
Package
Packaging type
TapingTaping Taping Taping Taping
Code
Basic ordering
unit (pieces)
zAbsolute maximum ratings (Ta=25°C)
Limits
Parameter Symbol
V
CC
150 200 300
50
10 to +40
50
100
150
55 to +150
DTC114EEDTC114EM DTC114EUA DTC114EKA DTC114ESA
V
V
mA
mW
°C
°C
V
IN
I
O
I
C(Max.)
P
D
Tj
Tstg
Unit
Supply voltage
Input voltage
Output current
Power dissipation
Junction temperature
Storage temperature
zElectrical characteristics (Ta=25°C)
Parameter Symbol
V
I(off)
V
I(on)
V
O(on)
I
I
I
O(off)
R
1
G
I
R
2
/R
1
f
T
Min.
3
7
30
0.8
0.1
10
1
250
0.5
0.3
0.88
0.5
13
1.2
V
V
CC
=5V, I
O
=100µA
V
O
=0.3V, I
O
=10mA
I
O
/I
I
=10mA/0.5mA
V
I
=5V
V
CC
=50V, V
I
=0V
V
O
=5V, I
O
=5mA
V
CE
=10V, I
E
=−5mA, f=100MHz
V
mA
µA
k
−−
MHz
Typ. Max. Unit Conditions
Input voltage
Output voltage
Input current
Output current
Input resistance
DC current gain
Resistance ratio
Transition frequency
Characteristics of built-in transistor
R1
R2
IN
GND
OUT
IN
R
1
=R
2
=10k
GND
OUT
DTC114EM / DTC114EE / DTC114EUA
Transistors
DTC114EKA / DTC114ESA
Rev.B 3/3
zElectrical characteristic curves
INPUT VOLTAGE : V
I(on)
(V)
OUTPUT CURRENT : I
O
(A)
100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m
100
50
20
10
5
2
1
500m
200m
100m
V
O
=0.3V
Ta=−40°C
25°C
100°C
Fig.1 Input voltage vs. output curren
t
(ON characteristics)
INPUT VOLTAGE : V
I(off)
(V)
OUTPUT CURRENT : Io
(A)
03
.0
10m
1µ
2m
5m
1m
200µ
500µ
100µ
20µ
50µ
10µ
2µ
5µ
0.5 1.0 1.5 2.0 2.5
V
CC
=5V
Ta=100°C
25°C
40°C
Fig.2 Output current vs. input voltag
e
(OFF characteristics)
OUTPUT CURRENT : I
O
(A)
DC CURRENT GAIN : G
I
100µ 200µ 500µ1m 2m 5m 10m 20m 50m100
m
1k
500
200
100
50
20
10
5
2
1
V
O
=5V
Ta=100°C
25°C
40°C
Fig.3 DC current gain vs. output
current
OUTPUT CURRENT : I
O
(A)
OUTPUT VOLTAGE : V
O(on)
(V)
100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m
1
500m
200m
100m
50m
20m
10m
5m
2m
1m
l
O
/l
I
=20
Ta=100°C
25°C
40°C
Fig.4 Output voltage vs. output
current

DTC114ESATP

Mfr. #:
Manufacturer:
ROHM Semiconductor
Description:
Bipolar Transistors - Pre-Biased NPN 50V 50MA SPT
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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