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NTD5865NL-1G

P1-P3P4-P6P7-P7
NTD5865NL
http://onsemi.com
4
TYPICAL CHARACTERISTICS
0
200
400
600
800
1000
1200
1400
1600
1800
0 102030405060
Figure 7. Capacitance Variation
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
C, CAPACITANCE (pF)
T
J
= 25°C
V
GS
= 0 V
C
iss
C
oss
C
rss
0
2
4
6
8
10
0 5 10 15 20 25 3
0
Q
gs
Q
T
Q
gd
Figure 8. Gate−to−Source vs. Total Charge
Q
g
, TOTAL GATE CHARGE (nC)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
V
DS
= 48 V
I
D
= 40 A
T
J
= 25°C
1
10
100
1000
1 10 100
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
R
G
, GATE RESISTANCE (W)
t, TIME (ns)
V
DD
= 48 V
I
D
= 40 A
V
GS
= 10 V
t
d(off)
t
d(on)
t
r
t
f
0
5
10
15
20
25
30
35
40
0.50 0.55 0.60 0.65 0.70 0.75 0.80 0.85 0.90 0.95 1.0
0
Figure 10. Diode Forward Voltage vs. Current
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
I
S
, SOURCE CURRENT (A)
T
J
= 25°C
V
GS
= 0 V
0.1
1
10
100
1000
0.1 1 10 100
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
10 ms
100 ms
1 ms
dc
10 ms
R
DS(on)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
V
GS
= 10 V
SINGLE PULSE
T
C
= 25°C
NTD5865NL
http://onsemi.com
5
TYPICAL CHARACTERISTICS
0.01
0.1
1
10
0.000001 0.00001 0.0001 0.001 0.01 0.1 1
Figure 12. Thermal Response
t, PULSE TIME (s)
R
q
JC(t)
(°C/W) EFFECTIVE TRANSIENT
THERMAL RESISTANCE
0.02
0.2
0.01
0.05
Duty Cycle = 0.5
SINGLE PULSE
0.1
ORDERING INFORMATION
Order Number Package Shipping
†
NTD5865NL−1G IPAK (Straight Lead)
(Pb−Free)
75 Units / Rail
NTD5865NLT4G DPAK
(Pb−Free)
2500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
NTD5865NL
http://onsemi.com
6
PACKAGE DIMENSIONS
DPAK (SINGLE GUAGE)
CASE 369AA
ISSUE B
b
D
E
b3
L3
L4
b2
e
M
0.005 (0.13) C
c2
A
c
C
Z
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
D 0.235 0.245 5.97 6.22
E 0.250 0.265 6.35 6.73
A 0.086 0.094 2.18 2.38
b 0.025 0.035 0.63 0.89
c2 0.018 0.024 0.46 0.61
b2 0.030 0.045 0.76 1.14
c 0.018 0.024 0.46 0.61
e 0.090 BSC 2.29 BSC
b3 0.180 0.215 4.57 5.46
L4 −−− 0.040 −−− 1.01
L 0.055 0.070 1.40 1.78
L3 0.035 0.050 0.89 1.27
Z 0.155 −−− 3.93 −−−
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-
MENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
12 3
4
5.80
0.228
2.58
0.102
1.60
0.063
6.20
0.244
3.00
0.118
6.17
0.243
ǒ
mm
inches
Ǔ
SCALE 3:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
H 0.370 0.410 9.40 10.41
A1 0.000 0.005 0.00 0.13
L1 0.108 REF 2.74 REF
L2 0.020 BSC 0.51 BSC
A1
H
DETAIL A
SEATING
PLANE
A
B
C
L1
L
H
L2
GAUGE
PLANE
DETAIL A
ROTATED 90 CW5
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
P1-P3P4-P6P7-P7

NTD5865NL-1G

Mfr. #:
Buy NTD5865NL-1G
Manufacturer:
ON Semiconductor
Description:
MOSFET Single N-CH 60V 40A
Lifecycle:
New from this manufacturer.
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