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NTHD5904NT1G

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 2005
November, 2005 − Rev. 2
1 Publication Order Number:
NTHD5904N/D
NTHD5904N
Power MOSFET
20 V, 4.5 A, Dual N−Channel, ChipFETt
Features
• Low R
DS(on)
and Fast Switching Speed
• Leadless ChipFET Package has 40% Smaller Footprint than TSOP−6.
Ideal Device for Applications Where Board Space is at a Premium.
• ChipFET Package Exhibits Excellent Thermal Capabilities. Ideal for
Applications Where Heat Transfer is Required.
• Pb−Free Packages are Available
Applications
• DC−DC Buck or Boost Converters
• Low Side Switching
• Optimized for Battery and Low Side Switching Applications in
Computing and Portable Equipment
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Parameter Symbol Value Unit
Drain−to−Source Voltage V
DSS
20 V
Gate−to−Source Voltage V
GS
±8.0 V
Continuous Drain
Current (Note 1)
Steady
State
T
A
=25°C
I
D
3.3
A
T
A
=85°C
2.4
t ≤ 5 s T
A
=25°C
4.5
Power Dissipation
(Note 1)
Steady
State
T
A
=25°C
P
D
1.13 W
Continuous Drain
Current (Note 2)
Steady
State
T
A
=25°C
I
D
2.5
A
T
A
=85°C
1.8
Power Dissipation
(Note 2)
T
A
=25°C
P
D
0.64 W
Pulsed Drain Current
t
p
=10 ms
I
DM
10 A
Operating Junction and Storage Temperature T
J
,
T
STG
−55 to
150
°C
Source Current (Body Diode) I
S
2.6 A
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
T
L
260 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Max Unit
Junction−to−Ambient – Steady State (Note 1)
R
q
JA
110
°C/W
Junction−to−Ambient – t ≤ 5 s (Note 1)
R
q
JA
60
Junction−to−Ambient – Steady State (Note 2)
R
q
JA
195
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[1 oz] including traces).
2. Surface Mounted on FR4 Board using the minimum recommended pad size
(Cu area = 0.214 in sq).
3. ESD Rating Information: Human Body Model (HBM) Class 0.
ChipFET
CASE 1206A
STYLE 2
http://onsemi.com
20 V
55 mW @ 2.5 V
40 mW @ 4.5 V
R
DS(on)
TYP
4.5 A
I
D
MAXV
(BR)DSS
N−Channel MOSFET
MARKING
DIAGRAM
1
2
3
4
S
1
G
1
S
2
G
2
D
1
D
1
D
2
D
2
(Top View)
PIN
CONNECTIONS
8
7
6
5
5
6
7
81
2
3
4
D
1
, D
2
G
1
, G
2
S
1
, S
2
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
D3 = Specific Device Code
M = Month Code
G = Pb−Free Package
D3 M
G
NTHD5904N
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted)
Parameter Symbol Test Conditions Min Typ Max Units
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage V
(BR)DSS
V
GS
= 0 V 20 V
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V, V
DS
= 16 V 1.0
mA
V
GS
= 0 V, V
DS
= 16 V, T
J
= 125°C 10
Gate−to−Source Leakage Current I
GSS
V
DS
= 0 V, V
GS
= "8.0 V "100 nA
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage V
GS(TH)
V
GS
= V
DS
, I
D
= 250 mA
0.6 0.75 1.2 V
Drain−to−Source On−Resistance R
DS(on)
V
GS
= 4.5 V, I
D
= 3.3 A 40 65
mW
V
GS
= 2.5 V, I
D
= 2.3 A 55 105
Forward Transconductance g
FS
V
DS
= 10 V, I
D
= 3.3 A 6.0 S
CHARGES AND CAPACITANCES
Input Capacitance C
iss
V
GS
= 0 V, f = 1.0 MHz,
V
DS
= 16 V
465
pF
Output Capacitance C
oss
65
Reverse Transfer Capacitance C
rss
30
Total Gate Charge Q
G(TOT)
V
GS
= 2.5 V, V
DS
= 16 V,
I
D
= 3.3 A
4.0
nC
Threshold Gate Charge Q
G(TH)
0.4
Gate−to−Source Charge Q
GS
0.8
Gate−to−Drain Charge Q
GD
2.0
Total Gate Charge Q
G(TOT)
V
GS
= 4.5 V, V
DS
= 10 V,
I
D
= 3.3 A
6.0
nC
Threshold Gate Charge Q
G(TH)
0.5
Gate−to−Source Charge Q
GS
0.8
Gate−to−Drain Charge Q
GD
1.7
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time t
d(on)
V
GS
= 4.5 V, V
DS
= 16 V,
I
D
= 3.3 A, R
G
= 2.5 W
6.0
ns
Rise Time t
r
17
Turn−Off Delay Time t
d(off)
17
Fall Time t
f
5.1
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage V
SD
V
GS
= 0 V, I
S
= 2.6 A 0.8 1.15 V
Reverse Recovery Time t
RR
V
GS
= 0 V, I
S
= 2.6 A,
dI
S
/dt = 100 A/ms
19.5
ns
Charge Time t
a
6.0
Discharge Time t
b
13
Reverse Recovery Charge Q
RR
7.0 nC
4. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
ORDERING INFORMATION
Device Package Shipping
†
NTHD5904NT1 ChipFET 3000 / Tape & Reel
NTHD5904NT1G ChipFET
(Pb−Free)
3000 / Tape & Reel
NTHD5904NT3 ChipFET 10,000 / Tape & Reel
NTHD5904NT3G ChipFET
(Pb−Free)
10,000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
NTHD5904N
http://onsemi.com
3
TYPICAL PERFORMANCE CURVES (T
J
= 25°C unless otherwise noted)
2 V
125°C
0
8
1
6
0.5
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
I
D,
DRAIN CURRENT (AMPS)
4
2
0
Figure 1. On−Region Characteristics
0
8
21.5 2.5
6
4
2
1
0
3
Figure 2. Transfer Characteristics
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
35
0.06
0.04
0.02
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (
W
)
I
D,
DRAIN CURRENT (AMPS)
26
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
I
D,
DRAIN CURRENT (AMPS)
−50 0−25 25
1.4
1.2
1.0
0.8
0.6
50 125100
Figure 5. On−Resistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (°C)
T
J
= 25°C
0.08
24
T
J
= −55°C
I
D
= 3.3 A
T
J
= 25°C
0.06
0.03
75 150
T
J
= 25°C
I
D
= 3.3 A
V
GS
= 2.5 V
R
DS(on),
DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
25°C
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
1.6
V
GS
= 4.5 V
16
5
10
2
0
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
V
GS
= 0 V
I
DSS
, LEAKAGE (nA)
T
J
= 100°C
1.4 V
1.6 V
1.8 V
V
GS
= 2.5 V
100
10000
1.5
2.4 V
V
DS
≥ 10 V
34
0.05
10 15
V
GS
= 3 V
V
GS
= 4 V
2
0.5
0.05
0.03
0.07
0.04
5
1000
T
J
= 150°C
9
7
5
3
1
10
11
1.2 V
5 V
9
7
5
3
1
10
11
P1-P3P4-P6

NTHD5904NT1G

Mfr. #:
Buy NTHD5904NT1G
Manufacturer:
ON Semiconductor
Description:
MOSFET 20V 4.5A Dual N-Channel
Lifecycle:
New from this manufacturer.
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