DPF 240 X 400 NA
tentative
ns
HiPerFRED²
Symbol Definition
R a t i n g s
Features / Advantages:
typ. max.
I
FSM
I
R
A
V
2000
I A
V
F
1.25
R 0.45 K/W
V
R
=
min.
120
t = 10 ms
Applications:
V
RRM
V400
5T
VJ
V°C=
T
VJ
°C=mA1
Package:
Part number
V
R
=
T
VJ
=°C
I
F
=A
V
T
C
= 80°C
d =
P
tot
280 WT
C
°C=
T
VJ
150 °C-40
I
=
=
400
120
120
T
VJ
= 45°C
DPF 240 X 400 NA
400
V400
25
25
25
max. repetitive reverse voltage
reverse current
forward voltage
virtual junction temperature
total power dissipation
max. forward surge current
Conditions
Unit
1.45
T
VJ
°C=25
C
J
unction capacitance
V = V; T
150
V
F0
V0.80T
VJ
= 150°C
r
F
2
f = 1 MHz = °C25
mΩ
V1.06T
VJ
=°C
I
F
=A
V
120
1.31
I
F
=A240
I
F
=A240
2x
threshold voltage
slope resistance
for power loss calculation only
Backside: isolated
6A
T
VJ
=°C
reverse recovery time
Atbd
45
tbd
ns
(50 Hz), sine
t
= 45 ns
● Housing:
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Parallel legs
SOT-227B (minibloc)
rIndustry standard outline
rCu base plate internal DCB isolated
rIsolation Voltage 3000 V
rEpoxy meets UL 94V-0
rRoHS compliant
R
VJ
I
RM
max. reverse recovery current
I
F
=A;120
25
T=125°C
VJ
-di
F
=A/µs200/dtt
rr
V
R
=V240
T
VJ
=°C25
T=125°C
VJ
µA
187200 pF
thermal resistance junction to case
thJC
rectangular 0.5
● Planar passivated chips
● Very low leakage current
● Very short recovery time
● Improved thermal behaviour
● Very low Irm-values
● Very soft recovery behaviour
● Avalanche voltage rated for reliable operation
● Soft reverse recovery for low EMI/RFI
● Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
● Antiparallel diode for high frequency
switching devices
● Antisaturation diode
● Snubber diode
● Free wheeling diode
● Rectifiers in switch mode power
supplies (SMPS)
● Uninterruptible power supplies (UPS)
FAV
average forward current
150
IXYS reserves the right to change limits, conditions and dimensions.
©
20110620
Data according to IEC 60747and per diode unless otherwise specified
2011 IXYS all rights reserved