BLF4G20LS-130,112

BLF4G20LS-130_1 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 01 — 1 June 2007 7 of 11
NXP Semiconductors
BLF4G20LS-130
UHF power LDMOS transistor
8. Test information
[1] American Technical Ceramics type 100B or capacitor of same quality.
Striplines are on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) (ε
r
= 3.5); thickness = 0.76 mm.
See Table 8 for list of components.
Fig 9. Component layout for 1930 MHz to 1990 MHz production test circuit
001aag534
BLF4G20LS-130
input - PCS rev. 1
C3
C1
C2
BLF4G20LS-130
output - PCS rev. 1
C7
C10
C5
C9
W1
VDD
C6
C4
R1
Table 8. List of components (see Figure 9)
Component Description Value Dimensions Remarks
C1, C3, C5, C7 chip capacitor 11 pF
[1]
C2, C9 tantalum capacitor 10 µF
C4 chip capacitor 0.8 pF
[1]
C6 chip capacitor 0.1 pF
[1]
C8 American Technical Ceramics
(ATC) chip capacitor
1 µF 1812X7R105KL2AB
C10 Philips electrolytic capacitor 220 µF; 35 V
R1 Philips chip resistor 5.1 0603
W1 hand made wire 5 mm
BLF4G20LS-130_1 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 01 — 1 June 2007 8 of 11
NXP Semiconductors
BLF4G20LS-130
UHF power LDMOS transistor
9. Package outline
Fig 10. Package outline SOT502B
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC JEDEC JEITA
SOT502B
03-01-10
07-05-09
0 5 10 mm
scale
Earless flanged LDMOST ceramic package; 2 leads SOT502B
A
F
b
D
U
2
L
H
Q
c
1
3
2
D
1
E
D
U
1
D
E
1
M M
w
2
UNIT
A
mm
Db
12.83
12.57
0.15
0.08
20.02
19.61
9.53
9.25
19.94
18.92
9.91
9.65
4.72
3.43
c
U
2
0.25
w
2
F
1.14
0.89
U
1
20.70
20.45
L
5.33
4.32
Q
1.70
1.45
EE
1
9.50
9.30
inches
0.505
0.495
0.006
0.003
0.788
0.772
D
1
19.96
19.66
0.786
0.774
0.375
0.364
0.785
0.745
0.390
0.380
0.186
0.135
0.010
0.045
0.035
0.815
0.805
0.210
0.170
0.067
0.057
0.374
0.366
H
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
BLF4G20LS-130_1 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 01 — 1 June 2007 9 of 11
NXP Semiconductors
BLF4G20LS-130
UHF power LDMOS transistor
10. Abbreviations
11. Revision history
Table 9. Abbreviations
Acronym Description
ACPR Adjacent Channel Power Ratio
CDMA Code Division Multiple Access
CW Continuous Wave
EDGE Enhanced Data rates for GSM Evolution
EVM Error Vector Magnitude
GSM Global System for Mobile communications
LDMOS Laterally Diffused Metal Oxide Semiconductor
LDMOST Laterally Diffused Metal-Oxide Semiconductor Transistor
RF Radio Frequency
RMS Root Mean Square
VSWR Voltage Standing Wave Ratio
Table 10. Revision history
Document ID Release date Data sheet status Change notice Supersedes
BLF4G20LS-130_1 20070601 Product data sheet - -

BLF4G20LS-130,112

Mfr. #:
Manufacturer:
NXP Semiconductors
Description:
FET RF 65V 1.99GHZ SOT502B
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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