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T1610T-8G-TR

P1-P3P4-P6P7-P9P10-P11
D²PAK
A2
A2
A1
G
A2
G
A1
A2: Anode2
A1: Anode1
G: Gate
Features
• High static dV/dt
• High dynamic turn-off commutation (dl/dt)c
• 150 °C maximum junction temperature
• Three quadrants
• Surge capability V
DSM
, V
RSM
= 900 V
• Benefits:
– High immunity to false turn-on thanks to high static dV/dt
– Better turn-off in high temperature environments thanks to (dI/dt)c
– Increase of thermal margin due to extended working T
j
up to 150 °C
– Good thermal resistance due to non-insulated tab.
Applications
• General purpose AC line load switching
• Motor control circuits
• Home appliances
• Heating
• Lighting
• Inrush current limiting circuits
• Overvoltage crowbar protection
Description
Available in SMD, the T1610T-8G Triac can be used for the on/off or phase angle
control function in general purpose AC switching where high commutation capability
is required. This device can be used without a snubber RC circuit when the limits
defined are respected.
D
2
PAK Package is UL-94,V0 flammability resin compliance.
Package environmentally friendly Ecopack
®
2 graded (RoHS and Halogen Free
compliance).
Snubberless™ is a trademark of STMicroelectronics.
Product status link
T1610T-8G
Product summary
I
T(RMS)
16 A
V
DRM
/V
RRM
800 V
V
DSM
/V
RSM
900 V
I
GT
10 mA
16 A logic level (sensitive) Triac
T1610T-8G
Datasheet
DS12532 - Rev 2 - July 2018
For further information contact your local STMicroelectronics sales office.
www.st.com
1 Characteristics
Table 1. Absolute maximum ratings (limiting values), T
j
= 25 °C unless otherwise specified
Symbol Parameter Value Unit
V
DRM
/V
RRM
Repetitive peak off-state voltage (50-60 Hz)
T
j
= 125 °C
800 V
T
j
= 150 °C
600 V
V
DSM
/V
RSM
Non Repetitive peak off-state voltage
t
p
= 10 ms, T
j
= 25 °C
900 V
I
T(RMS)
RMS on-state current (full sine wave)
T
c
= 126 °C
16 A
I
TSM
Non repetitive surge peak on-state current (full cycle, T
j
initial = 25
°C
t = 16.7 ms 126
A
t = 20 ms 120
I
2
t I
2
t value for fusing
t
p
= 10 ms
95
A
2
s
dl/dt
Critical rate of rise of on-state current, I
G
= 2 x I
GT
, tr ≤ 100 ns
f = 100 Hz 100 A/µs
I
GM
Peak gate current
t
p
= 20 µs, T
j
= 150 °C
4 A
V
GM
Peak Gate Voltage 5 V
P
G(AV)
Average gate power dissipation
T
j
= 150 °C
1 W
T
stg
Storage junction temperature range -40 to +150 °C
T
j
Operating junction temperature range -40 to +150 °C
Table 2. Electrical characteristics (T
j
= 25 °C, unless otherwise specified)
Symbol
Test conditions
Quadrants; T
j
Value Unit
I
GT
(1)
V
D
= 12 V, R
L
= 30 Ω
I - II - III Max. 10 mA
V
GT
V
D
= 12 V, R
L
= 30 Ω
I - II - III Max. 1.3 V
V
GD
V
D
= 800 V, R
L
= 3.3 kΩ T
j
= 125 °C
I - II - III Min. 0.2 V
I
L
I
G
= 1.2 x I
GT
I - III Max. 20 mA
I
G
= 1.2 x I
GT
II Max. 30 mA
I
H
(2)
I
T
= 500 mA, gate open
Max. 25 mA
dV/dt
(2)
V
D
= 536 V, gate open T
j
= 125 °C
Min. 100 V/µs
V
D
= 402 V, gate open T
j
= 150 °C
Min. 50 V/µs
(dl/dt)c
(2)
(dV/dt)c = 0.1 V/μs
T
j
= 125 °C
Min.
9
A/ms
T
j
= 150 °C
5.4
(dV/dt)c = 10 V/μs
T
j
= 125 °C
Min.
3
A/ms
T
j
= 150 °C
1.8
1. Minimum I
GT
is guaranteed at 5% of I
GT
max
2. For both polarities of A2 referenced to A1.
T1610T-8G
Characteristics
DS12532 - Rev 2
page 2/11
Table 3. Static characteristics
Symbol Test conditions
T
j
Value Unit
V
TM
(1)
I
T
= 22.6 A, t
p
= 380 µs
25 °C Max. 1.55 V
V
TO
(1)
Threshold on-state voltage 150 °C Max. 0.85 V
R
D
(1)
Dynamic resistance 150 °C Max. 34 mΩ
I
DRM
/I
RRM
V
DRM
= V
RRM
= 800 V
25 °C
Max.
5 µA
125°C 1.0 mA
V
DRM
= V
RRM
= 600 V
150 °C Max. 3.6 mA
1. For both polarities of A2 referenced to A1.
Table 4. Thermal resistance
Symbol Parameter Value Unit
R
th(j-c)
Junction to case (AC) D²PAK Max. 1.15 °C/W
T1610T-8G
Characteristics
DS12532 - Rev 2
page 3/11
P1-P3P4-P6P7-P9P10-P11

T1610T-8G-TR

Mfr. #:
Buy T1610T-8G-TR
Manufacturer:
STMicroelectronics
Description:
Triacs 16 A 800 V Triac
Lifecycle:
New from this manufacturer.
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