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VS-15ETH06S-M3

P1-P3P4-P6P7-P9P10-P12P13-P13
VS-15ETH06S-M3, VS-15ETH06-1-M3
www.vishay.com
Vishay Semiconductors
Revision: 24-Oct-17
1
Document Number: 96301
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Hyperfast Rectifier, 15 A FRED Pt
®
FEATURES
• Hyperfast recovery time
• Low forward voltage drop
• Low leakage current
• 175 °C operating junction temperature
• Single die center tap module
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 245 °C
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION / APPLICATIONS
State of the art hyperfast recovery rectifiers designed with
optimized performance of forward voltage drop, hyperfast
recovery time, and soft recovery.
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness and
reliability characteristics.
These devices are intended for use in PFC boost stage in the
AC/DC section of SMPS, inverters or as freewheeling
diodes.
The extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
PRIMARY CHARACTERISTICS
I
F(AV)
15 A
V
R
600 V
V
F
at I
F
1.3 V
t
rr
(typ.) 22 ns
T
J
max. 175 °C
Package D
2
PAK (TO-263AB), TO-262AA
Circuit configuration Single
D
2
PAK (TO-263AB)
TO-262AA
1
3
2
1
3
2
Anode
1
3
Base
cathode
2
N/C
Anode
1
3
2
N/C
VS-15ETH06S-M3 VS-15ETH06-1-M3
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Peak repetitive reverse voltage V
RRM
600 V
Average rectified forward current I
F(AV)
T
C
= 140 °C 15
ANon-repetitive peak surge current I
FSM
T
J
= 25 °C 120
Peak repetitive forward current I
FM
30
Operating junction and storage temperatures T
J
, T
Stg
-65 to +175 °C
ELECTRICAL SPECIFICATIONS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage,
blocking voltage
V
BR
,
V
R
I
R
= 100 μA 600 - -
V
Forward voltage V
F
I
F
= 15 A - 1.8 2.2
I
F
= 15 A, T
J
= 150 °C - 1.3 1.6
Reverse leakage current I
R
V
R
= V
R
rated - 0.2 50
μA
T
J
= 150 °C, V
R
= V
R
rated - 30 500
Junction capacitance C
T
V
R
= 600 V - 20 - pF
Series inductance L
S
Measured lead to lead 5 mm from package body - 8.0 - nH
VS-15ETH06S-M3, VS-15ETH06-1-M3
www.vishay.com
Vishay Semiconductors
Revision: 24-Oct-17
2
Document Number: 96301
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
DYNAMIC RECOVERY CHARACTERISTICS (T
C
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time t
rr
I
F
= 1 A, dI
F
/dt = 100 A/μs, V
R
= 30 V - 22 30
ns
I
F
= 15 A, dI
F
/dt = 100 A/μs, V
R
= 30 V - 28 35
T
J
= 25 °C
I
F
= 15 A
dI
F
/dt = 200 A/μs
V
R
= 390 V
-29-
T
J
= 125 °C - 75 -
Peak recovery current I
RRM
T
J
= 25 °C - 3.5 -
A
T
J
= 125 °C - 7 -
Reverse recovery charge Q
rr
T
J
= 25 °C - 57 -
μC
T
J
= 125 °C - 300 -
Reverse recovery time t
rr
T
J
= 125 °C
I
F
= 15 A
dI
F
/dt = 800 A/μs
V
R
= 390 V
-51-ns
Peak recovery current I
RRM
-20- A
Reverse recovery charge Q
rr
- 580 - nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Maximum junction and storage
temperature range
T
J
, T
Stg
-65 - 175 °C
Thermal resistance,
junction to case per leg
R
thJC
-1.01.3
°C/W
Thermal resistance,
junction to ambient per leg
R
thJA
Typical socket mount - - 70
Thermal resistance,
case to heatsink
R
thCS
Mounting surface, flat, smooth, and greased - 0.5 -
Weight
-2.0- g
-0.07- oz.
Mounting torque
6.0
(5.0)
-
12
(10)
kgf · cm
(lbf · in)
Marking device
Case style D
2
PAK (TO-263AB) 15ETH06S
Case style TO-262AA 15ETH06-1
100
10
1
0.5 1.0 1.5 2.0 2.5 3.0
I
F
- Instantaneous ForwardCurrent (A)
V
F
- Forward Voltage Drop (V)
T
J
= 175 °C
T
J
= 150 °C
T
J
= 25 °C
0 100 200 300 400 500 600
I
R
- Reverse Current (µA)
V
R
- Reverse Voltage (V)
0.001
0
0.01
0.1
1
10
100
1000
T
J
= 100 °C
T
J
= 175 °C
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
VS-15ETH06S-M3, VS-15ETH06-1-M3
www.vishay.com
Vishay Semiconductors
Revision: 24-Oct-17
3
Document Number: 96301
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
Note
(1)
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= rated V
R
1000
100
10
0 100 200 300 400 500 600
C
T
- Junction Capacitance (pF)
V
R
- Reverse Voltage (V)
T
J
= 25 °C
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1
t
1
- Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impedance (°C/W)
Single pulse
(thermal resistance)
.
.
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
10
0 5 10 15 20 25
Allowable Case Temperature (°C)
I
F(AV)
- Average Forward Current (A)
120
130
140
150
160
170
180
See note (1)
Square wave (D = 0.50)
80 % rated V
R
applied
110
DC
0 5 10 15 20 25
Average Power Loss (W)
I
F(AV)
- Average Forward Current (A)
0
5
10
15
20
25
30
35
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
DC
RMS Limit
P1-P3P4-P6P7-P9P10-P12P13-P13

VS-15ETH06S-M3

Mfr. #:
Buy VS-15ETH06S-M3
Manufacturer:
Vishay Semiconductors
Description:
Rectifiers 600V 15A IF (TO-263AB) 120A IFSM
Lifecycle:
New from this manufacturer.
Delivery:
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