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STTH506DTI

P1-P3P4-P5
1/5
STTH506DTI
October 2003 - Ed: 2A
Tandem 600V HYPERFAST BOOST DIODE
®
The TURBOSWITCH “H” is an ultra high
performance diode composed of two 300V dice in
series. TURBOSWITCH “H” family drastically cuts
losses in the associated MOSFET when run at
high dI
F
/dt.
DESCRIPTION
■
ESPECIALLY SUITED AS BOOST DIODE IN
CONTINUOUS MODE POWER FACTOR
CORRECTORS AND HARD SWITCHING
CONDITIONS
■ DESIGNED FOR HIGH dI
F
/dt OPERATION.
HYPERFAST RECOVERY CURRENT TO
COMPETE WITH SiC DEVICES. ALLOWS
DOWNSIZING OF MOSFET AND HEATSINKS
■
INTERNAL CERAMIC INSULATED DEVICES
WITH EQUAL THERMAL CONDITIONS FOR
BOTH 300V DIODES
■
INSULATION (2500V
RMS
) ALLOWS
PLACEMENT ON SAME HEATSINK AS
MOSFET FLEXIBLE HEATSINKING ON
COMMON OR SEPARATE HEATSINK
■
STATIC AND DYNAMIC EQUILIBRIUM OF
INTERNAL DIODES ARE WARRANTED BY
DESIGN
■
Package Capacitance: C=7pF
FEATURES AND BENEFITS
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage
600 V
I
F(RMS)
RMS forward current
14 A
I
FSM
Surge non repetitive forward current tp = 10 ms sinusoidal
60 A
Ipeak
Peak current waveform δ = 0.15 Tc = 140°C
8A
T
stg
Storage temperature range
-65 +150 °C
Tj
Maximum operating junction temperature
+ 150 °C
ABSOLUTE RATINGS (limiting values)
I
F(AV)
5A
V
RRM
600 V
Tj (max) 150 °C
V
F
(max) 2.4 V
I
RM
(typ.) 3.6 A
t
rr
(typ.) 12 ns
MAJOR PRODUCTS CHARACTERISTICS
1
2
12
Insulated TO-220AC
STTH506DTI
2/5
Symbol Parameter Test conditions Value Unit
R
th (j-c)
Junction to case thermal resistance
3.0 °C/W
THERMAL AND POWER DATA
Symbol Parameter Tests Conditions Min. Typ. Max. Unit
I
R
*
Reverse leakage current V
R
=V
RRM
Tj = 25°C
6µA
Tj = 125°C
860
V
F
**
Forward voltage drop I
F
= 5A Tj=25°C
3.6 V
Tj = 150°C
1.95 2.4
Pulse test : * tp = 100 ms, δ <2%
** tp = 380 µs, δ <2%
To evaluate the maximum conduction losses use the following equation :
P=1.7xI
F(AV)
+ 0.14 I
F
2
(RMS)
STATIC ELECTRICAL CHARACTERISTICS
Symbol Parameter Tests Conditions Min. Typ. Max. Unit
t
rr
Reverse recovery
time
I
F
= 0.5 A Irr = 0.25 A
I
R
=1A
Tj = 25°C
12 ns
I
F
=1A dI
F
/dt=-50A/µs
V
R
=30V
25
I
RM
Reverse recovery
current
V
R
= 400 V I
F
=5A
dI
F
/dt = -200 A/µs
Tj = 125°C
3.6 4.5 A
S
Reverse recovery
softness factor
0.4 -
Q
rr
Reverse recovery
charges
45 nC
DYNAMIC CHARACTERISTICS
Symbol Parameter Tests Conditions Min. Typ. Max. Unit
t
fr
Forward recovery
time
I
F
=5A dI
F
/dt = 100 A/µs
V
FR
=1.1xV
F
max
Tj = 25°C
100 ns
V
FP
Transient peak
forward recovery
voltage
I
F
=5A dI
F
/dt = 100 A/µs Tj = 25°C
7V
TURN-ON SWITCHING CHARACTERISTICS
STTH506DTI
3/5
P(W)
0
2
4
6
8
10
12
14
16
18
20
01234567
I (A)
F(AV)
T
δ
=tp/T
tp
δ = 1
δ = 0.05
δ = 0.1
δ = 0.2
δ = 0.5
Fig. 1: Conduction losses versus average current.
I (A)
FM
0
10
20
30
40
50
60
70
80
90
100
012345678
T=25°C
(maximum values)
j
T=125°C
(maximum values)
j
T=125°C
(typical values)
j
V (V)
FM
Fig. 2: Forward voltage drop versus forward
current.
Z/R
th(j-c) th(j-c)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-03 1.E-02 1.E-01 1.E+00
T
δ
=tp/T
tp
t (s)
p
δ = 0.5
δ = 0.2
δ = 0.1
Single pulse
Fig. 3: Relative variation of thermal impedance
junction to case versus pulse duration.
0
5
10
15
20
25
30
35
40
45
50
0 50 100 150 200 250 300 350 400 450 500
t (ns)
rr
V =400V
T=125°C
R
j
dI /dt(A/µs)
F
I =2 x I
F F(AV)
I=I
F F(AV)
I =0.5 x I
F F(AV)
Fig. 5: Reverse recovery time versus dI
F
/dt
(typical values).
0
1
2
3
4
5
6
7
8
9
0 50 100 150 200 250 300 350 400 450 500
I (A)
RM
V =400V
T=125°C
R
j
dI /dt(A/µs)
F
I=I
F F(AV)
I =0.5 x I
F F(AV)
I =0.25 x I
F F(AV)
I =2 x I
F F(AV)
Fig. 4: Peak reverse recovery current versus
dI
F
/dt (typical values).
0
10
20
30
40
50
60
70
80
90
100
0 50 100 150 200 250 300 350 400 450 500
Q (nC)
rr
V =400V
T=125°C
R
j
I =2 x I
F F(AV)
I=I
F F(AV)
I =0.5 x I
F F(AV)
dI /dt(A/µs)
F
Fig. 6: Reverse recovery charges versus dI
F
/dt
(typical values).
P1-P3P4-P5

STTH506DTI

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Manufacturer:
STMicroelectronics
Description:
Rectifiers 5.0 Amp 600 Volt
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