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CPC3708CTR

P1-P3P4-P6
I
NTEGRATED
C
IRCUITS
D
IVISION
www.ixysic.com
DS-CPC3708-R03
1
CPC3708
350V N-Channel
Depletion Mode FET
Part Number Description
CPC3708CTR SOT-89: Tape and Reel (1000/Reel)
CPC3708ZTR SOT-223: Tape and Reel (1000/Reel)
Applications
Features
Description
Ordering Information
Package Pinout:
• LED Drive Circuits
• Telecommunications
• Normally On Switches
• Ignition Modules
• Converters
• Security
• Power Supplies
• Regulators
• 350V Drain-to-Source Voltage
• Depletion Mode Device Offers Low R
DS(on)
at Cold Temperatures
• Low On-Resistance: 8 (Typical) @ 25°C
• Low V
GS(off)
Voltage
• High Input Impedance
• Low Input and Output Leakage
• Small Package Size SOT-89 and SOT-223
• PC Card (PCMCIA) Compatible
• PCB Space and Cost Savings
The CPC3708 is a N-channel, depletion mode Field
Effect Transistor (FET) that is available in an
SOT-223 package (CPC3708Z) and an SOT-89
package (CPC3708C). Both utilize IXYS Integrated
Circuits Division’s proprietary third-generation
vertical DMOS process that realizes world class,
high voltage MOSFET performance in an economical
silicon gate process. The vertical DMOS process
yields a highly reliable device, particularly for
use in difficult application environments such as
telecommunications, security, and power supplies.
CPC3708Z and the CPC3708C have a typical
on-resistance of 8 and a drain-to-source voltage
of 350V. As with all MOS devices, the FET structure
prevents thermal runaway and thermally induced
secondary breakdown.
Pin Number Name
1GATE
2 DRAIN
3 SOURCE
4 DRAIN
Parameter Rating Units
Drain-to-Source Voltage - V
(BR)DSX
350 V
Max On-Resistance - R
DS(on)
14
Max Power
SOT-89 Package 1.1
W
SOT-223 Package 2.5
Circuit Symbol
D
G D S
4
123
D
S
G
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2
R03
CPC3708
Parameter Symbol Conditions Min Typ Max Units
Gate-to-Source Voltage V
GS
I
D
=60mA, V
DS
=5V -1.005 - -1.735 V
Gate-to-Source Off Voltage V
GS(off)
I
D
=2A, V
DS
=10V, V
DS
=100V -2 - -3.6 V
Drain-to-Source Leakage Current I
DS(off)
V
GS
= -5V, V
DS
=190V - - 20 nA
V
GS
= -5V, V
DS
=350V - - 1 A
Drain Current
I
D
V
GS
= -2.7V, V
DS
=5V, V
DS
=50V - - 5 mA
V
GS
= -0.57V, V
DS
=5V 130 - - mA
On-Resistance R
DS(on)
V
GS
= -0.35V, I
DS
=50mA - 8 14
Gate Leakage Current I
GSS
V
GS
=±20V - - 100 nA
Gate Capacitance C
ISS
V
DS
= V
GS
=0V - - 300 pF
Electrical Characteristics @25
o
C (Unless Otherwise Specified)
Absolute Maximum Ratings are stress ratings. Stresses in
excess of these ratings can cause permanent damage to the
device. Functional operation of the device at conditions beyond
those indicated in the operational sections of this data sheet is
not implied.
Absolute Maximum Ratings @ 25ºC
Thermal Resistance
Package
Parameter
Symbol Conditions Min Typ Max Units
SOT-89 Junction to Case R
JC
---
50
ºC/W
Junction to Ambient R
JA
90
SOT-223 Junction to Case R
JC
---
14
Junction to Ambient R
JA
55
Parameter Ratings Units
Drain-to-Source Voltage (V
(BR)DSX
) 350 V
Gate-to-Source Voltage (V
GS
) ±20 V
Total Package Dissipation
1
SOT-89 1.1
W
SOT-223 2.5
Operational Temperature -40 to +110
o
C
Storage Temperature -40 to +125
o
C
1
Mounted on 1"x1" FR4 board.
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NTEGRATED
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IVISION
CPC3708
www.ixysic.com
3
R03
CPC3708Z (SOT-223) PERFORMANCE DATA*
*The Performance data shown in the graphs above is typical of device performance in SOT-223 Package. For guaranteed parameters not indicated in the written
specifi cations, please contact our application department.
V
DS
(V)
012345
I
D
(A)
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
Output Characteristics
(T
A
=25ºC)
V
GS
=-0.5
V
GS
=-1
V
GS
=-1.5
V
GS
=-2
I
D
(A)
0.0 0.1 0.2 0.3 0.4 0.5 0.6
On-Resistance (:)
0
5
10
15
20
On-Resistance vs. Drain Current
(V
GS
=0V)
I
D
(mA)
0 50 100 150
0
50
100
150
200
250
300
Transconductance vs Drain Current
(V
DS
=10V)
T
A
=-40ºC
T
A
=25ºC
T
A
=125ºC
G
FS
(m)
:
V
GS
(V)
-3.0 -2.5 -2.0 -1.5 -1.0
I
D
(mA)
0
50
100
150
200
250
Transfer Characteristics
(V
DS
=10V)
T
A
=125ºC
T
A
=25ºC
T
A
=-40ºC
Temperature (ºC)
-40 -20 0 20 40 60 80 100
V
GS(off)
(V)
-3.0
-2.9
-2.8
-2.7
-2.6
-2.5
-2.4
-2.3
V
GS(off)
vs. Temperature
(V
DS
=10V, I
D
=2PA)
Temperature (ºC)
-40 -20 0 20 40 60 80 100
On-Resistance (:)
4
5
6
7
8
9
10
11
12
On-Resistance vs. Temperature
(V
GS
=0V, I
D
=100mA)
V
DS
(V)
0 5 10 15 20 25 30
Capacitance (pF)
0
50
100
150
200
250
300
Capacitance vs. Drain-Source Voltage
(V
GS
=-5V)
C
ISS
C
OSS
C
RSS
V
DS
(V)
1 10 100 1000
I
DS
(A)
0.001
0.01
0.1
1
Forward Safe Operating Bias
(V
GS
=0V, DC Load, T
C
=25ºC)
Limited by
Device Channel
Saturation
Limited by
Device R
DS(on)
P1-P3P4-P6

CPC3708CTR

Mfr. #:
Buy CPC3708CTR
Manufacturer:
IXYS Integrated Circuits
Description:
MOSFET N-Channel Depletion Mode FET
Lifecycle:
New from this manufacturer.
Delivery:
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