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NTD60N02RT4G

P1-P3P4-P6P7-P8
NTD60N02R
http://onsemi.com
4
2000
10 5 0 5 10 15 20
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V)
C, CAPACITANCE (pF)
T
J
= 25°C
V
GS
= 0 V
C
iss
C
oss
C
rss
C
iss
V
DS
= 0 V
C
rss
V
GS
V
DS
1500
1000
500
0
Figure 7. Capacitance Variation
Q
g
, TOTAL GATE CHARGE (nC)
Figure 8. Gate−to−Source and Drain−to−Source
Voltage versus Total Charge
1
10
100
1000
1 10 100
R
G
, GATE RESISTANCE (W)
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
t, TIME (ns)
V
DD
= 10 V
I
D
= 31 A
V
GS
= 10 V
1
10
100
0.1 1 10 100
R
DS(ON)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
10 ms
100 ms
1 ms
10 ms
dc
V
GS
= 20 V
SINGLE PULSE
T
C
= 25°C
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
80
0.2 0.4 0.6 0.8 1.0 1.2
Figure 10. Diode Forward Voltage versus
Current
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased Safe Operating Area
I
S
, SOURCE CURRENT (A)
V
GS
= 0 V
T
J
= 25°C
t
r
t
d(off)
t
f
t
d(on)
0
1
2
3
4
5
04610
Q
GS
Q
DS
V
GS
I
D
= 31 A
T
J
= 25°C
28
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
DS
Q
T
0
4
8
12
16
20
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
70
60
50
40
30
20
10
0
1.4 1.6 1
.8
NTD60N02R
http://onsemi.com
5
Figure 12. Thermal Response
r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
t, TIME (s)
0.1
1.0
0.01
0.1
0.2
0.02
D = 0.5
0.05
0.01
SINGLE PULSE
R
q
JC
(t) = r(t) R
q
JC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
− T
C
= P
(pk)
R
q
JC
(t)
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
1100.10.010.0010.00010.00001
ORDERING INFORMATION
Order Number Package Shipping
†
NTD60N02R DPAK−3 75 Units / Rail
NTD60N02RG DPAK−3
(Pb−Free)
75 Units / Rail
NTD60N02RT4 DPAK−3 2500 / Tape & Reel
NTD60N02RT4G DPAK−3
(Pb−Free)
2500 / Tape & Reel
NTD60N02R−1 DPAK−3 Straight Lead 75 Units / Rail
NTD60N02R−1G DPAK−3 Straight Lead
(Pb−Free)
75 Units / Rail
NTD60N02R−35 DPAK−3 Straight Lead
(3.5 ± 0.15 mm)
75 Units / Rail
NTD60N02R−35G DPAK−3 Straight Lead
(3.5 ± 0.15 mm)
(Pb−Free)
75 Units / Rail
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
NTD60N02R
http://onsemi.com
6
PACKAGE DIMENSIONS
DPAK
CASE 369AA−01
ISSUE A
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
D
A
B
R
V
S
F
L
2 PL
M
0.13 (0.005) T
E
C
U
J
−T−
SEATING
PLANE
Z
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A 0.235 0.245 5.97 6.22
B 0.250 0.265 6.35 6.73
C 0.086 0.094 2.19 2.38
D 0.025 0.035 0.63 0.89
E 0.018 0.024 0.46 0.61
F 0.030 0.045 0.77 1.14
J 0.018 0.023 0.46 0.58
L 0.090 BSC 2.29 BSC
R 0.180 0.215 4.57 5.45
S 0.024 0.040 0.60 1.01
U 0.020 −−− 0.51 −−−
V 0.035 0.050 0.89 1.27
Z 0.155 −−− 3.93 −−−
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
123
4
H 0.386 0.410 9.80 10.40
H
5.80
0.228
2.58
0.101
1.6
0.063
6.20
0.244
3.0
0.118
6.172
0.243
ǒ
mm
inches
Ǔ
SCALE 3:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
P1-P3P4-P6P7-P8

NTD60N02RT4G

Mfr. #:
Buy NTD60N02RT4G
Manufacturer:
ON Semiconductor
Description:
MOSFET 25V 62A N-Channel
Lifecycle:
New from this manufacturer.
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