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NTD60N02R-35G

P1-P3P4-P6P7-P8
© Semiconductor Components Industries, LLC, 2006
December, 2006 − Rev. 12
1 Publication Order Number:
NTD60N02R/D
NTD60N02R
Power MOSFET
62 A, 25 V, N−Channel, DPAK
Features
• Planar HD3e Process for Fast Switching Performance
• Low R
DS(on)
to Minimize Conduction Loss
• Low C
iss
to Minimize Driver Loss
• Low Gate Charge
• Optimized for High Side Switching Requirements in
High−Efficiency DC−DC Converters
• Pb−Free Packages are Available
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Rating Symbol Value Unit
Drain−to−Source Voltage V
DSS
25 Vdc
Gate−to−Source Voltage − Continuous V
GS
±20 Vdc
Thermal Resistance
Junction−to−Case
Total Power Dissipation @ T
C
= 25°C
Drain Current
Continuous @ T
C
= 25°C, Chip
Continuous @ T
C
= 25°C, Limited by Package
Continuous @ T
A
= 25°C, Limited by Wires
R
q
JC
P
D
I
D
I
D
I
D
2.6
58
62
50
32
°C/W
W
A
A
A
Thermal Resistance
Junction−to−Ambient (Note 1)
Total Power Dissipation @ T
A
= 25°C
Drain Current − Continuous @ T
A
= 25°C
R
q
JA
P
D
I
D
80
1.87
10.5
C/W
W
A
Thermal Resistance
Junction−to−Ambient (Note 2)
Total Power Dissipation @ T
A
= 25°C
Drain Current − Continuous @ T
A
= 25°C
R
q
JA
P
D
I
D
120
1.25
8.5
°C/W
W
A
Operating and Storage Temperature T
J
, and
T
stg
−55 to
175
°C
Single Pulse Drain−to−Source Avalanche Energy
− Starting T
J
= 25°C
(V
DD
= 50 Vdc, V
GS
= 10.0 Vdc,
I
L
= 11 Apk, L = 1.0 mH, R
G
= 25 W)
E
AS
60 mJ
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
T
L
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to an FR4 board using 0.5 in sq drain pad size.
2. When surface mounted to an FR4 board using the minimum recommended
pad size.
MARKING DIAGRAM
& PIN ASSIGNMENTS
http://onsemi.com
Y = Year
WW = Work Week
T60N02R = Device Code
G = Pb−Free Package
25 V
8.4 mW @ 10 V
R
DS(on)
TYP
62 A
I
D
MAXV
(BR)DSS
CASE 369D
DPAK
(Straight Lea
d)
STYLE 2
1
Gate
3
Source
2
Drain
4
Drain
YWW
T60
N02RG
YWW
T60
N02RG
1
Gate
3
Source
2
Drain
4
Drain
1
2
3
4
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
N−Channel
D
S
G
CASE 369AA
DPAK
(Surface Mount)
STYLE 2
1
2
3
4
1
2
3
4
CASE 369AC
3 IPAK
(Straight Lead)
NTD60N02R
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 3)
(V
GS
= 0 Vdc, I
D
= 250 mAdc)
Temperature Coefficient (Positive)
V
(BR)DSS
25
−
27.5
25.5
−
−
Vdc
mV/°C
Zero Gate Voltage Drain Current
(V
DS
= 20 Vdc, V
GS
= 0 Vdc)
(V
DS
= 20 Vdc, V
GS
= 0 Vdc, T
J
= 150°C)
I
DSS
−
−
−
−
1.5
10
mAdc
Gate−Body Leakage Current (V
GS
= ±20 Vdc, V
DS
= 0 Vdc) I
GSS
− − ±100 nAdc
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage (Note 3)
(V
DS
= V
GS
, I
D
= 250 mAdc)
Threshold Temperature Coefficient (Negative)
V
GS(th)
1.0
−
1.5
4.1
2.0
−
Vdc
mV/°C
Static Drain−to−Source On−Resistance (Note 3)
(V
GS
= 4.5 Vdc, I
D
= 15 Adc)
(V
GS
= 10 Vdc, I
D
= 20 Adc)
(V
GS
= 10 Vdc, I
D
= 31 Adc)
R
DS(on)
−
−
−
11.2
8.4
8.2
12.5
10.5
−
mW
Forward Transconductance (V
DS
= 10 Vdc, I
D
= 15 Adc) (Note 3) g
FS
− 27 − Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 20 Vdc, V
GS
= 0 Vdc,
f = 1.0 MHz)
C
iss
− 1000 1330
pF
Output Capacitance C
oss
− 480 640
Transfer Capacitance C
rss
− 180 225
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
(V
GS
= 10 Vdc, V
DD
= 10 Vdc,
I
D
= 31 Adc, R
G
= 3.0 W)
t
d(on)
− 7.0 −
ns
Rise Time t
r
− 33 −
Turn−Off Delay Time t
d(off)
− 19 −
Fall Time t
f
− 9.0 −
Gate Charge
(V
GS
= 4.5 Vdc, I
D
= 31 Adc,
V
DS
= 10 Vdc) (Note 3)
Q
T
− 9.5 14
nC
Q
GS
− 2.2 −
Q
GD
− 5.0 −
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
(I
S
= 20 Adc, V
GS
= 0 Vdc) (Note 3)
(I
S
= 31 Adc, V
GS
= 0 Vdc)
(I
S
= 15 Adc, V
GS
= 0 Vdc, T
J
= 125°C)
V
SD
−
−
−
0.88
1.15
0.80
1.2
−
−
Vdc
Reverse Recovery Time
(I
S
= 31 Adc, V
GS
= 0 Vdc,
dI
S
/dt = 100 A/ms) (Note 3)
t
rr
− 29.1 −
ns
t
a
− 13.6 −
t
b
− 15.5 −
Reverse Recovery Stored Charge Q
rr
− 0.02 −
mC
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
NTD60N02R
http://onsemi.com
3
TYPICAL CHARACTERISTICS
10
100
1000
10000
0 6 12 18 2
4
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
T
J
= 100°C
T
J
= 175°C
V
GS
= 0 V
100000
0
20
40
60
80
100
120
0246810
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
V
GS
= 10 V
140
4.5 V
5.0 V
4.0 V
3.8 V
3.6 V
3.4 V
3.2 V
3.0 V
2.8 V2.8 V
4.2 V
2.4 V
8.0 V
6.0 V
2.6 V
T
J
= 25°C
Figure 1. On−Region Characteristics
0.05
2
46
810
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (
W
)
Figure 2. Transfer Characteristics
Figure 3. On−Resistance versus
Gate−to−Source Voltage
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I
D
= 62 A
T
J
= 25°C
0
0.01
0.02
0.03
0.04
0.05
20 40 60 80 100 120
T
J
= 25°C
V
GS
= 4.5 V
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
I
D
, DRAIN CURRENT (A)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
0.6
0.8
1.0
1.2
1.4
1.6
1.8
−50 −25 0 25 50 75 100 125 150
Figure 5. On−Resistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (°C)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
Figure 6. Drain−to−Source Leakage Current
versus Voltage
I
DSS
, LEAKAGE (nA)
0
20
40
60
80
100
120
0246
8
T
J
= −55°C
T
J
= 25°C
T
J
= 175°C
V
DS
w 10 V
I
D
= 31 A
V
GS
= 10 V
0.04
0.03
0.02
0.01
0
I
D
, DRAIN CURRENT (A)
V
GS
= 10 V
14
0
2.0
175
P1-P3P4-P6P7-P8

NTD60N02R-35G

Mfr. #:
Buy NTD60N02R-35G
Manufacturer:
ON Semiconductor
Description:
MOSFET N-CH 25V 8.5A IPAK
Lifecycle:
New from this manufacturer.
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