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TSAL6200

P1-P3P4-P5
TSAL6200
www.vishay.com
Vishay Semiconductors
Rev. 2.4, 13-Mar-14
1
Document Number: 81010
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW
DESCRIPTION
TSAL6200 is an infrared, 940 nm emitting diode in GaAlAs
multi quantum well (MQW) technology with high radiant
power and high speed molded in a blue-gray plastic
package.
FEATURES
• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): Ø 5
• Peak wavelength: λ
p
= 940 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity: ϕ = ± 17°
• Low forward voltage
• Suitable for high pulse current operation
• Good spectral matching with Si photodetectors
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Infrared remote control units with high power
requirements
• Free air transmission systems
• Infrared source for optical counters and card readers
Note
• Test conditions see table “Basic Characteristics”
Note
• MOQ: minimum order quantity
94 8389
PRODUCT SUMMARY
COMPONENT I
e
(mW/sr) ϕ (deg) λ
p
(nm) t
r
(ns)
TSAL6200 72 ± 17 940 15
ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
TSAL6200 Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage V
R
5V
Forward current I
F
100 mA
Peak forward current t
p
/T = 0.5, t
p
= 100 μs I
FM
200 mA
Surge forward current t
p
= 100 μs I
FSM
1.5 A
Power dissipation P
V
160 mW
Junction temperature T
j
100 °C
Operating temperature range T
amb
-40 to +85 °C
Storage temperature range T
stg
-40 to +100 °C
Soldering temperature t ≤ 5 s, 2 mm from case T
sd
260 °C
Thermal resistance junction/ambient J-STD-051, leads 7 mm soldered on PCB R
thJA
230 K/W
TSAL6200
www.vishay.com
Vishay Semiconductors
Rev. 2.4, 13-Mar-14
2
Document Number: 81010
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature
0
20
40
60
80
100
120
140
160
180
0 102030405060708090100
21211
T
amb
- Ambient Temperature (°C)
P
V
- Power Dissipation (mW)
R
thJA
= 230 K/W
0
20
40
60
80
100
120
0 102030405060708090100
T
amb
- Ambient Temperature (°C)
21212
I
F
- Forward Current (mA)
R
thJA
= 230 K/W
BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage
I
F
= 100 mA, t
p
= 20 ms V
F
1.35 1.6 V
I
F
= 1 A, t
p
= 100 μs V
F
2.2 3 V
Temperature coefficient of V
F
I
F
= 1 mA TK
VF
-1.8 mV/K
Reverse current V
R
= 5 V I
R
10 μA
Junction capacitance V
R
= 0 V, f = 1 MHz, E = 0 C
j
40 pF
Radiant intensity
I
F
= 100 mA, t
p
= 20 ms I
e
40 72 200 mW/sr
I
F
= 1 A, t
p
= 100 μs I
e
340 600 mW/sr
Radiant power I
F
= 100 mA, t
p
= 20 ms φ
e
40 mW
Temperature coefficient of φ
e
I
F
= 20 mA TKφ
e
-0.6 %/K
Angle of half intensity ϕ ± 17 deg
Peak wavelength I
F
= 100 mA λ
p
940 nm
Spectral bandwidth I
F
= 100 mA Δλ 30 nm
Temperature coefficient of λ
p
I
F
= 100 mA TKλ
p
0.2 nm/K
Rise time I
F
= 100 mA t
r
15 ns
Fall time I
F
= 100 mA t
f
15 ns
TSAL6200
www.vishay.com
Vishay Semiconductors
Rev. 2.4, 13-Mar-14
3
Document Number: 81010
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 3 - Pulse Forward Current vs. Pulse Duration
Fig. 4 - Forward Current vs. Forward Voltage
Fig. 5 - Radiant Intensity vs. Forward Current
Fig. 6 - Radiant Power vs. Forward Current
Fig. 7 - Relative Radiant Intensity/Power vs. Ambient Temperature
Fig. 8 - Relative Radiant Power vs. Wavelength
t
p
- Pulse Duration (ms)
96 11987
10
0
10
1
10
1
10
-1
10
-1
10
0
10
2
10
-2
I - Forward Current (A)
F
t
p
/T = 0.01
I
FSM
= 1 A (Single Pulse)
0.05
0.1
0.5
1.0
1
10
100
1000
01 23
t
p
= 100 µs
t
p
/T= 0.001
V
F
- Forward Voltage (V)
21534
I
F
- Forward Current (mA)
0.1
1
10
100
1000
1 10 100 1000
I
e
- Radiant Intensity (mW/sr)
I
F
- Forward Current (mA)
t
p
= 100 μs
0.1
1
10
100
1000
1 10 100 1000
Phi
e
- Radiant Power (mW)
I
F
- Forward Current (mA)
t
p
= 100 μs
-10 10
50
0
100
0
0.4
0.8
1.2
1.6
I
e rel
;
140
94 7993
I
F
= 20 mA
Φ
e rel
T
amb
- Ambient Temperature (°C)
0
10
20
30
40
50
60
70
80
90
100
840 880 920 960 1000 1040
λ - Wavelength (nm)
21445
Φ
e rel
- Relative Radiant Power (%)
I
F
= 30 mA
P1-P3P4-P5

TSAL6200

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Description:
Infrared Emitters 17 Degree 40mW
Lifecycle:
New from this manufacturer.
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