VS-20CTQ040S-M3

VS-20CTQ...S-M3, VS-20CTQ...-1-M3 Series
www.vishay.com
Vishay Semiconductors
Revision: 26-Feb-14
1
Document Number: 94932
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Performance Schottky Rectifier, 2 x 10 A
FEATURES
175 °C T
J
operation
Center tap configuration
Low forward voltage drop
High frequency operation
High purity, high temperature epoxy
encapsulation for enhanced mechanical strength
and moisture resistance
Guard ring for enhanced ruggedness and long term
reliability
Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
Designed and qualified according to JEDEC
®
-JESD 47
Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The VS-20CTQ... center tap Schottky rectifier series has
been optimized for low reverse leakage at high temperature.
The proprietary barrier technology allows for reliable
operation up to 175 °C junction temperature. Typical
applications are in switching power supplies, converters,
freewheeling diodes, and reverse battery protection.
PRODUCT SUMMARY
I
F(AV)
2 x 10 A
V
R
35 V to 45 V
V
F
at I
F
0.57 V
I
RM
15 mA at 125 °C
T
J
max. 175 °C
E
AS
13 mJ
Package TO-263AB (D
2
PAK), TO-262AA
Diode variation Common cathode
D
2
PAK
TO-262
Base
common
cathode
Anode Anode
Common
cathode
1
3
2
2
Base
common
cathode
Anode Anode
Common
cathode
1
3
2
2
VS-20CTQ...S-M3
VS-20CTQ...-1-M3
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
Rectangular waveform 20 A
V
RRM
Range 35 to 45 V
I
FSM
t
p
= 5 μs sine 1060 A
V
F
10 A
pk
, T
J
= 125 °C (per leg) 0.57 V
T
J
Range -55 to 175 °C
VOLTAGE RATINGS
PARAMETER SYMBOL
VS-20CTQ035S-M3
VS-20CTQ035-1-M3
VS-20CTQ040S-M3
VS-20CTQ040-1-M3
VS-20CTQ045S-M3
VS-20CTQ045-1-M3
UNITS
Maximum DC reverse voltage V
R
35 40 45 V
Maximum working peak reverse voltage V
RWM
VS-20CTQ...S-M3, VS-20CTQ...-1-M3 Series
www.vishay.com
Vishay Semiconductors
Revision: 26-Feb-14
2
Document Number: 94932
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
See fig. 5
I
F(AV)
50 % duty cycle at T
C
= 145 °C, rectangular waveform 20
A
Maximum peak one cycle non-repetitive
surge current per leg
See fig. 7
I
FSM
5 μs sine or 3 μs rect. pulse Following any rated load
condition and with rated
V
RRM
applied
1060
10 ms sine or 6 ms rect. pulse 265
Non-repetitive avalanche energy per leg E
AS
T
J
= 25 °C, I
AS
= 2.0 A, L = 6.5 mH 13 mJ
Repetitive avalanche current per leg I
AR
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
2.0 A
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop per leg
See fig. 1
V
FM
(1)
10 A
T
J
= 25 °C
0.64
V
20 A 0.76
10 A
T
J
= 125 °C
0.57
20 A 0.68
Maximum reverse leakage current per leg
See fig. 2
I
RM
(1)
T
J
= 25 °C
V
R
= Rated V
R
2
mA
T
J
= 125 °C 15
Maximum junction capacitance per leg C
T
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz), 25 °C 900 pF
Typical series inductance per leg L
S
Measured lead to lead 5 mm from package body 8.0 nH
Maximum voltage rate of change dV/dt Rated V
R
10 000 V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range
T
J
, T
Stg
-55 to 175 °C
Maximum thermal resistance,
junction to case per leg
R
thJC
DC operation
See fig. 4
3.25
°C/W
Maximum thermal resistance,
junction to case per package
DC operation 1.63
Typical thermal resistance,
case to heatsink
R
thCS
Mounting surface, smooth and greased 0.50
Approximate weight
2g
0.07 oz.
Mounting torque
minimum 6 (5)
kgf cm
(lbf in)
maximum 12 (10)
Case style D
2
PAK
20CTQ035S
20CTQ040S
20CTQ045S
Case style TO-262
20CTQ035-1
20CTQ040-1
20CTQ045-1
VS-20CTQ...S-M3, VS-20CTQ...-1-M3 Series
www.vishay.com
Vishay Semiconductors
Revision: 26-Feb-14
3
Document Number: 94932
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Maximum Forward Voltage Drop Characteristics
(Per Leg)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage (Per Leg)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics (Per Leg)
0.1
1
I
F
- Instantaneous Forward
Current (A)
V
FM
- Forward Voltage Drop (V)
0 0.4 1.2 1.8
10
0.8
T
J
= 175 °C
T
J
= 125 °C
T
J
= 25 °C
100
1000
0.2 0.6 1.0 1.61.4
I
R
- Reverse Current (mA)
V
R
- Reverse Voltage (V)
0102030 45
0.001
0.01
0.1
1
10
4035
100
51525
0.0001
T
J
= 175 °C
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
T
J
= 75 °C
T
J
= 50 °C
T
J
= 25 °C
1000
C
T
- Junction Capacitance (pF)
V
R
- Reverse Voltage (V)
0 20304050
100
10
1000
T
J
= 25 °C
Z
thJC
- Thermal Impedance (°C/W)
0.001
0.1
10
t
1
- Rectangular Pulse Duration (s)
0.00001 0.0001 0.001 0.01 0.1 1 10010
Single pulse
(thermal resistance)
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
0.01
1
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
P
DM
t
1
t
2

VS-20CTQ040S-M3

Mfr. #:
Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers Schottky - D2PAK-e3
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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