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BPW96C

P1-P3P4-P5
BPW96B, BPW96C
www.vishay.com
Vishay Semiconductors
Rev. 1.8, 23-Aug-11
1
Document Number: 81532
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Silicon NPN Phototransistor
DESCRIPTION
BPW96 is a silicon NPN phototransistor with high radiant
sensitivity in clear, T-1¾ plastic package. It is sensitive to
visible and near infrared radiation.
FEATURES
• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): Ø 5
• Leads with stand-off
• High photo sensitivity
• High radiant sensitivity
• Suitable for visible and near infrared radiation
• Fast response times
• Angle of half sensitivity: ϕ = ± 20°
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Note
** Please see document “Vishay Material Category Policy”:
www.vishay.com/doc?99902
APPLICATIONS
• Detector in electronic control and drive circuits
Note
• Test condition see table “Basic Characteristics”
Note
• MOQ: minimum order quantity
94 8391
PRODUCT SUMMARY
COMPONENT I
ca
(mA) ϕ (deg) λ
0.1
(nm)
BPW96B 2.5 to 7.5 ± 20 450 to 1080
BPW96C 4.5 to 15 ± 20 450 to 1080
ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
BPW96B Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾
BPW96C Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Collector emitter voltage V
CEO
70 V
Emitter collector voltage V
ECO
5V
Collector current I
C
50 mA
Collector peak current t
p
/T ≤ 0.5, t
p
≤ 10 ms I
CM
100 mA
Power dissipation T
amb
≤ 47 °C P
V
150 mW
Junction temperature T
j
100 °C
Operating temperature range T
amb
- 40 to + 100 °C
Storage temperature range T
stg
- 40 to + 100 °C
Soldering temperature t ≤ 3 s T
sd
260 °C
Thermal resistance junction/ambient Connected with Cu wire, 0.14 mm
2
R
thJA
350 K/W
BPW96B, BPW96C
www.vishay.com
Vishay Semiconductors
Rev. 1.8, 23-Aug-11
2
Document Number: 81532
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
0
40
80
120
160
200
P
V
- Power Dissipation (mW)
T
amb
- Ambient Temperature (°C)
100806040200
94 8300
R
thJA
BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Collector emitter breakdown voltage I
C
= 1 mA V
(BR)CEO
70 V
Collector emitter dark current V
CE
= 20 V, E = 0 I
CEO
1 200 nA
Collector emitter capacitance V
CE
= 5 V, f = 1 MHz, E = 0 C
CEO
3pF
Angle of half sensitivity ϕ ± 20 deg
Wavelength of peak sensitivity λ
p
850 nm
Range of spectral bandwidth λ
0.1
450 to 1080 nm
Collector emitter saturation voltage
E
e
= 1 mW/cm
2
, λ = 950 nm,
I
C
= 0.1 mA
V
CEsat
0.3 V
Turn-on time V
S
= 5 V, I
C
= 5 mA, R
L
= 100 Ω t
on
2.0 μs
Turn-off time V
S
= 5 V, I
C
= 5 mA, R
L
= 100 Ω t
off
2.3 μs
Cut-off frequency V
S
= 5 V, I
C
= 5 mA, R
L
= 100 Ω f
c
180 kHz
TYPE DEDICATED CHARACTERISTICS
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
Collector light current
E
e
= 1 mW/cm
2
, λ = 950 nm,
V
CE
= 5 V
BPW96B I
ca
2.5 4.5 7.5 mA
BPW96C I
ca
4.5 8 15 mA
BPW96B, BPW96C
www.vishay.com
Vishay Semiconductors
Rev. 1.8, 23-Aug-11
3
Document Number: 81532
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 1 - Collector Dark Current vs. Ambient Temperature
Fig. 2 - Relative Collector Current vs. Ambient Temperature
Fig. 3 - Collector Light Current vs. Irradiance
Fig. 4 - Collector Light Current vs. Collector Emitter Voltage
Fig. 5 - Collector Emitter Capacitance vs. Collector Emitter Voltage
Fig. 6 - Turn-on/Turn-off Time vs. Collector Current
20
100
40 60 80
10
10
1
10
2
10
3
10
4
V
CE
= 20 V
T
amb
- Ambient Temperature (°C)
I
CEO
- Collector Dark Current (nA)
94 8304
0
0.6
0.8
1.0
1.2
1.4
2.0
20 40 60 80
100
1.6
1.8
λ
94 8239
T
amb
- Ambient Temperature (°C)
I
ca rel
- Relative Collector Current
V
CE
= 5 V
E
e
= 1 mW/cm
2
= 950 nm
0.01 0.1 1
0.01
0.1
1
10
10
94 8296
V
CE
=5V
λ = 950 nm
BPW96B
BPW96C
E
e
- Irradiance (mW/cm
2
)
I - Collector Light Current (mA)
ca
0.1 1 10
0.1
1
10
I - Collector Light Current (mA)
ca
V
CE
- Collector Emitter Voltage (V)
100
94 8297
BPW96B
E
e
= 1 mW/cm²
0.5 mW/cm²
0.1 mW/cm²
0.2 mW/cm²
0.05 mW/cm²
λ
=950nm
0.1 1 10
0
2
4
6
8
10
V
CE
- Collector Emitter Voltage (V)
100
94 8301
C - Collector Emitter Capacitance (pF)
CEO
f = 1 MHz
0
0 2 4 6 8 10 12 14
2
8
6
4
V
CE
= 5 V
R
L
= 100 Ω
λ = 950 nm
t
off
t
on
I
C
- Collector Current (mA)
t
on
/t
off
- Turn-on/Turn-off Time (µs)
94 8293
P1-P3P4-P5

BPW96C

Mfr. #:
Buy BPW96C
Manufacturer:
Vishay Semiconductors
Description:
Phototransistors NPN Phototransistor 70V 150mW 850nm
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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