ALM-2506-BLKG

ALM-2506
GPS Low Noise Ampli er Variable Current/Shutdown Function
Data Sheet
Description
Avago Technologies’s ALM-2506 is a LNA designed
for GPS/ISM/Wimax applications in the (0.9-2.4)GHz
frequency range. The LNA uses Avago Technologies’s
proprietary GaAs Enhancement-mode pHEMT process to
achieve high gain operation with very low noise  gures
and high linearity. Noise  gure distribution is very tightly
controlled. Gain and supply current are guaranteed pa-
rameters. A CMOS compatible shutdown pin is included
to turn the LNA o and provide a variable bias.
The ALM-2506 LNA is useable down to 1V operation.
It achieves low noise  gures and high gain even at 1V,
making it suitable for use in critical low power GPS/ISM
band applications.
Package Marking and Orientation
Features
 Surface Mount 2.0 x 2.0 x 1.1 mm
3
MCOB
 Advanced GaAs E-pHEMT
 Low Noise: 0.8 dB typ
 High Gain: 14.3 dB typ
 Low component count
 High IIP3 and IP1dB
 Wide Supply Voltage: 1V to 3.6V
 Shutdown current: < 0.1uA
 CMOS compatible shutdown pin (VSD) current @ 2.85V:
90uA
 Adjustable bias current via one single external resistor/
voltage
 Small Footprint: 2x2mm
2
 Low Pro le: 1.1mm typ
 Lead free and Halogen free
 Ext matching for non-GPS freq band operation
Speci cations (25 deg):
At 1.575GHz, 2.85V 8mA (Typ)
 Gain = 14.3 dB (Typ)
 NF = 0.8 dB (Typ)
 IIP3 = 4.7 dBm (Typ)
 IP1dB = 1.8 dBm (Typ)
 S11 = -11.8 dB (Typ)
 S22 = -12.4 dB (Typ)
Note: Measurements obtained using demoboard described in Figure 4.
Simpli ed Schmatic
Pin Con guration
VSD
RF_OUT
VDD
RF_IN
BIAS
C
C2
C
C1
Amplifier2
AMP1
GND
Pin 1
Pin 2
Pin 3Pin 4
Pin 5
Pin 6
Bottom View
LNA I/O’s :
1. NC
2. RF_IN
3. NC
4. VSD
5. RF_OUT
6. VDD
O
BY
WW
Note: Package marking
provides Orientation
and identification:
“B” = Product Code
“Y” = Year
“WW” = Work Week
Top View
2
Absolute Maximum Ratings
[1]
Symbol Parameter Units Absolute Maximum
V
DS
Drain – Source Voltage
[2]
V 3.6
I
DS
2G Drain Current
[2]
mA 15
Pdiss Total Power Dissipation
[3]
mW 54
Pin max. RF Input Power dBm +10
T
CH
Channel Temperature °C 150
T
STG
Storage Temperature °C -65 to 150
ch_b
Thermal Resistance
[4]
°C/W 232
Notes:
1. Operation of this device above any one of these parameters may cause permanent damage.
2. Assuming DC quiescent conditions.
3. Board (package belly) temperature T
B
is 25°C. Derate 4.32mW/°C for T
B
> 137°C.
4. Channel-to-board thermal resistance measured using 150°C Liquid Crystal Measurement method.
Electrical Speci cations
T
A
= 25°C, DC bias for RF parameter is VDD = VSD = +2.85V @ 8mA (unless otherwise speci ed)
Table 1. Performance table at nominal operating conditions
VDD= VSD = +2.85V, R1 = 18K Ohm, Freq=1.575GHz – Typical Performance
Symbol Parameter and Test Condition Units Min. Typ Max.
G Gain dB 14.3
NF Noise Figure dB 0.8
IP1dB Input 1dB Compressed Power dBm 1.8
IIP3 Input 3
rd
Order Intercept Point
(2-tone @ Fc +/- 2.5MHz)
dBm 4.7
S11 Input Return Loss dB -11.8
S22 Output Return Loss dB - 12.4
Ids Supply Current mA 8
Ish Shutdown Current @ VSD = 0V uA 0.1
Vds Supply Voltage V 2.85
IP1dB
1710M
Out of Band IP1dB (DCS 1710MHz) blocking dBm 2.9
IIP3
OUT
Out of Band IIP3 (DCS 1775MHz & 1950MHz) dBm 5.5
Table 2. Typical performance at low operation voltages with R1 (see Fig 5) set to 0 Ohm
VDD = +2V, VDD= +1.5V & VDD= +1.0V, Freq=1.575GHz – Typical Performance
(VSD=VDD, R1=0 Ohm)
Symbol Parameter and Test Condition Units VDD = 2V VDD = 1.5V VDD = 1.0V
G Gain dB 15 14.2 12.3
NF Noise Figure dB 0.8 0.9 1
IP1dB Input 1dB Compressed Power dBm -1.4 -2.4 -3.8
IIP3 Input 3
rd
Order Intercept Point
(2-tone @ Fc +/- 2.5MHz)
dBm 7.3 4.9 5.2
S11 Input Return Loss dB -13.8 -11.5 -8
S22 Output Return Loss dB -15.5 -14.5 -11.7
Ids Supply Current mA 13 7.5 3.6
Ish Shutdown Current @ VSD = 0V uA 0.1 0.1 0.1
Vds Supply Voltage V 2 1.5 1.0
IP1dB
1710M
Out of Band IP1dB (DCS 1710MHz) blocking dBm -0.3 -1.9 -2.9
IIP3
OUT
Out of Band IIP3 (DCS 1775MHz & 1950MHz) dBm 8.7 5.8 3
3
Figure 1. Demoboard and Application Circuit Components
GPS LNA
RF IN
RF OUT
MAR 2005 TL.
Avago
Technologies
H 0.010
W 0.0220
e 3.48
GND
GND
VDD
SD
0.1μF
12Ω / / 33nH
100pF
6.8pF
10nH
5.6nH
4.7nH
6.8pF
18k
Figure 2. Demoboard schematic
+VDD
RF_OUT
VSD
RF_IN
Johanson 0402
Johanson 0402
Johanson 0402
Toko LL1005
BIAS
L
L3
R=
L=4.7 nH
C
C5
C=6.8 pF
L
L2
L=10 nH
L
L1
L=5.6 nH
R
R1
R=18 kOhm
C
C4
C=6.8 pF
C
C2
C
C3
C=0.1 uF
PRL
PRL1
L=33 nH
R=12 Ohm
C
C1
Amplifier2
AMP1
Notes
 L1 and L2 form the input matching network.
The LNA module has a integrated coupling
and DC-blocking capacitors at the input and
output. Best noise performance is obtained
using high-Q wirewound inductors. This
circuit demonstrates that low noise  gures are
obtainable with standard 0402 chip inductors.
Replacing L1, L2 and L3 with high-Q wirewound
inductors (eg. Cilcraft 0402CS series) will yield
0.1dB lower NF and 0.6dB higher Gain.
 L3 is an output matching inductor.
 C5 is a RF bypass capacitor.
 PRL1 is a network that isolates the measurement
demoboard from external disturbances. C3 and
C4 mitigates the e ect of external noise pickup
on the VSD and VDD lines. These components
are not required in actual operation.
 Bias control is achieved by either varying
the VSD voltage without R1 or  xing the VSD
voltage to VDD and varying R1. Typical value
for R1 is 18k Ohm for 8mA total current at
VDD=+2.85V.
 Higher gain and IP3 performance can be
obtained by increasing the supply current. This
can be achieved by reducing the value for R1 to
obtain desired current.
 For low voltage operation such as 1.5V or 1.0V,
the R1 may be omitted and VSD connected
directly to the supply pins.

ALM-2506-BLKG

Mfr. #:
Manufacturer:
Broadcom / Avago
Description:
IC RF AMP GPS 2.4GHZ 6MCOB
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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