DEMD48-7

DS31224 Rev. 4 - 2
1 of 4
www.diodes.com
DEMD48
© Diodes Incorporated
DEMD48
DUAL NPN/PNP PRE-BIASED TRANSISTOR
Features
Epitaxial Planar Die Construction
Surface Mount Package Suited for Automated Assembly
Simplifies Circuit Design and Reduces Board Space
Lead Free/RoHS Compliant (Note 1)
"Green" Device (Note 2)
Mechanical Data
Case: SOT-563
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish Matte Tin Finish annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
Marking Information: See Page 4
Ordering Information: See Page 4
Weight: 0.005 grams (approximate)
Reference Device Type R1(Nom) R2(Nom)
Q
1
NPN 47k 47k
Q
2
PNP 2.2 k 47k
SOT-563
NEW PRODUCT
6
Q
1
Q
2
54
312
R
1
R
2
R
1
R
2
47k
47k
2.2k
47k
Maximum Ratings, Total Device @T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Power Dissipation (Note 3)
P
D
300 mW
Thermal Resistance, Junction to Ambient Air (Note 3)
R
θ
JA
417 °C/W
Operating and Storage Temperature Range
T
j
, T
STG
-55 to +150 °C
Maximum Ratings, Pre-Biased NPN Transistor, Q
1
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage
V
CBO
50 V
Collector-Emitter Voltage
V
CEO
50 V
Emitter-Base Voltage
V
EBO
10 V
Input Voltage
V
IN
-10 to +40 V
Output Current (DC)
I
O
100 mA
Peak Collector Current
I
CM
100 mA
Maximum Ratings, Pre-Biased PNP Transistor, Q
2
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage
V
CBO
-50 V
Collector-Emitter Voltage
V
CEO
-50 V
Emitter-Base Voltage
V
EBO
-10 V
Input Voltage
V
IN
-12 to +5 V
Output Current (DC)
I
O
-100 mA
Peak Collector Current
I
CM
-100 mA
Notes: 1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at
http://www.diodes.com/datasheets/ap02001.pdf.
DS31224 Rev. 4 - 2
2 of 4
www.diodes.com
DEMD48
© Diodes Incorporated
Electrical Characteristics, Pre-Biased NPN Transistor, Q
1
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Cut-Off Current I
CBO
- - 100 nA V
CB
= 50V, I
E
= 0A
Collector-Emitter Cut-Off Current I
CEO
- -
1
50
μA
V
CE
= 30V, I
B
= 0A B
V
CE
= 30V, I
B
= 0A, TB
A
= 150°C
Emitter-Base Cut-Off Current I
EBO
- - 90
μA
V
EB
= 5V, I
C
= 0A
V
I(off)
- 1.2 0.8 V
V
CE
= 5V, I
O
= 100μA
Input Voltage
V
I(on)
3 1.6 - V V
CE
= 0.3V, I
O
= 2mA
Collector-Emitter Saturation Voltage V
CE(SAT)
- - 0.15 V I
C
/I
B
= 10mA/0.5mA
NEW PRODUCT
B
DC Current Gain h
FE
80 - - - V
CE
= 5V, I
C
= 5mA
Input Resistance R
1
33 47 61 k -
Resistance Ratio R
2
/R
1
0.8 1 1.2 - -
Collector Capacitance C
C
- - 2.5 pF V
CB
= 10V, I
E
= 0, f = 1MHz
Electrical Characteristics, Pre-Biased PNP Transistor, Q
2
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Cut-Off Current I
CBO
- - -100 nA V
CB
= -50V, I
E
= 0A
Collector-Emitter Cut-Off Current I
CEO
- -
-1
-50
μA
V
CE
= -30V, I
B
= 0A B
V
CE
= -30V, I
B
= 0A, TB
A
= 150°C
Emitter-Base Cut-Off Current I
EBO
- - -180
μA
V
EB
= -5V, I
C
= 0A
V
I(off)
- -0.6 -0.5 V
V
CC
= -5V, I
O
= -100μA
Input Voltage
V
I(on)
-1.1 -0.75 - V V
O
= -0.3V, I
O
= -5mA
Collector-Emitter Saturation Voltage V
CE(SAT)
- - -0.1 V I
C
/I
B
= -5mA/-0.25mA B
DC Current Gain h
FE
100 - - - V
CE
= -5V, I
C
= -10mA
Input Resistance R
1
1.54 2.2 2.86 k -
Resistance Ratio R
2
/R
1
17 21 26 - -
Collector Capacitance C
C
- - 3.0 pF V
CB
= -10V, I
E
= 0, f = 1MHz
1
10
100
1,000
DS31224 Rev. 4 - 2
3 of 4
www.diodes.com
DEMD48
© Diodes Incorporated
1
10
100
1,000
0.01
0.1
1
NEW PRODUCT

DEMD48-7

Mfr. #:
Manufacturer:
Diodes Incorporated
Description:
Bipolar Transistors - Pre-Biased 300mW +/-100mA
Lifecycle:
New from this manufacturer.
Delivery:
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Payment:
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