IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFJ26N50P3
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Note 1. Pulse test, t 300s, duty cycle, d 2%.
Symbol Test Conditions Characteristic Values
(T
J
= 25C Unless Otherwise Specified) Min. Typ. Max.
g
fs
V
DS
= 20V, I
D
= 13A, Note 1 14 23 S
C
iss
2220 pF
C
oss
V
GS
= 0V, V
DS
= 25V, f = 1MHz 280 pF
C
rss
8 pF
R
Gi
Gate Input Resistance 2.1
t
d(on)
21 ns
t
r
7 ns
t
d(off)
38 ns
t
f
5 ns
Q
g(on)
42 nC
Q
gs
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 13A 11 nC
Q
gd
15 nC
R
thJC
0.69 C/W
R
thCS
0.30 °C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(T
J
= 25C Unless Otherwise Specified) Min. Typ. Max.
I
S
V
GS
= 0V 26 A
I
SM
Repetitive, Pulse Width Limited by T
JM
104 A
V
SD
I
F
= I
S
, V
GS
= 0V, Note 1 1.4 V
t
rr
250 ns
I
RM
10.2
A
Q
RM
0.9 μC
I
F
= 13A, -di/dt = 100A/s
V
R
= 100V, V
GS
= 0V
Resistive Switching Times
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 13A
R
G
= 3 (External)
ISO TO-247 (IXFJ) OUTLINE
PINS:
1 = Gate
2 = Drain
3 = Source
4 = Isolated
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experience,
and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to
change limits, test conditions, and dimensions without notice.
