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T533N80TOHXPSA1

P1-P3P4-P6P7-P9P10-P10
Date of Publication: 2014-01-23
Seite/page: 7/9
Revision: 3.0
T533N
Netz-Thyristor
Phase Control Thyristor
Technische Information /
technical information
beidseitig
0
2
4
6
8
10
12
14
16
18
20
0 5 10 15 20 25 30 35
Q
r
[mAs]
-di/dt [A/µs]
Sperrverzögerungsladung / recovered charge Q
r
= f(-di/dt)
T
vj
=T
vjmax
, v
R
=0,5 V
RRM
, V
RM
=0,8 V
RRM
0
0,1
0,2
0,3
0,4
0,5
0,6
0,7
0,8
0,9
1
0 5 10 15 20 25 30 35
-di/dt [A/µs]
Q
r
[mAs]
Date of Publication: 2014-01-23
Seite/page: 8/9
Revision: 3.0
T533N
Netz-Thyristor
Phase Control Thyristor
Technische Information /
technical information
Ta bei Sinus
0
100
200
300
400
500
600
700
800
0 5 10 15 20 25 30 35
I
RM
[A]
-di/dt [A/µs]
Rückstromspitze / peak reverse recovery current I
RM
= f(-di/dt)
T
vj
=T
vjmax
, v
R
=0,5 V
RRM
, V
RM
=0,8 V
RRM
0
25
0 5 10 15 20 25 30 35
-di/dt [A/µs]
I
RM
[A]
Date of Publication: 2014-01-23
Seite/page: 9/9
Revision: 3.0
T533N
Netz-Thyristor
Phase Control Thyristor
Technische Information /
technical information
0-50V
0,33 VRRM
0,67 VRRM
0
2
4
6
8
10
12
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17
I
T(OV)M
[kA]
Anzahl Pulse bei 50Hz Sinus Halbwellen
Number of pulses for 50Hz sinusoidal half waves
Typische Abhängigkeit des Grenzstromes I
T(OV)M
von der Anzahl für eine Folge von Sinus Halbwellen bei 50Hz.
Parameter: Rückwärtsspannung V
RM
Typical dependency of maximum overload on-state current I
T(OV)M
as a number of a sequence of sinusoidal half waves
at 50Hz. Parameter: peak reverse voltage V
RM
I
T(OV)M
= f (pulses, V
RM
) ; T
vj
= T
vjmax
P1-P3P4-P6P7-P9P10-P10

T533N80TOHXPSA1

Mfr. #:
Buy T533N80TOHXPSA1
Manufacturer:
Infineon Technologies
Description:
SCR MODULE 864A DO200AC K-PUK
Lifecycle:
New from this manufacturer.
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