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TC75S51FUTE85LF

P1-P3P4-P6P7-P9P10-P10
TC75S51F/FU/FE
2014-03-01
4
3. V
OH
4. V
OL
5. I
DD
V
OH
V
DD
R
L
V
IN2
V
IN1
V
OL
V
DD
R
L
V
IN2
V
IN1
V
DD
V
DD
/2
M I
DD
• V
OH
V0.05
2
V
DD
V
IN1
−=
V0.05
2
V
DD
V
IN2
+=
• V
OL
V0.05
2
V
DD
V
IN1
+=
V0.05
2
V
DD
V
IN2
−=
TC75S51F/FU/FE
2014-03-01
5
G
V
– f
Voltage gain G
V
(dB)
120
10
Frequency f (Hz)
80
40
0
100 1 k 10 k 100 k 1 M 10 M
V
DD
= 3 V
V
SS
= GND
Ta = 25°C
Supply current I
DD
(μA)
Load resistance R
L
(Ω)
0
1 M
Supply voltage V
DD
(V)
R
L
– V
DD
100 k
10 k
1
2
3
4 5
6
7
V
SS
= GND
I
source
= 70 μA
Ta = 25°C
V
OH
V
DD
R
L
Isource
= 70 μA
0
7
Supply voltage V
DD
(V)
V
OH
– V
DD
High-level output voltage V
OH
(V)
1
2
4
5
0
1
2
3
4 5
6
7
V
SS
= GND
I
source
= 70 μA
Ta = 25°C
3
6
V
OH
V
DD
R
L
Isource
= 70 μA
Supply voltage V
DD
(V)
I
DD
– V
DD
0
100
20
40
60
80
V
SS
= GND
V
IN
= V
DD
/2
Ta = 25°C
0 1 2 3 4 5 6
7
V
DD
/2
V
DD
M
I
DD
TC75S51F/FU/FE
2014-03-01
6
Low-level output voltage V
OL
(V)
V
OL
– I
sink
0.001
10
0.1
1
0.01
V
DD
= 1.5 V
V
SS
= GND
Ta = 25°C
10 μ
100 μ 1 m
10 m
Sink current I
sink
(A)
V
OL
– I
sink
Sink current I
sink
(A)
Low-level output voltage V
OL
(V)
0.001
10
0.1
1
0.01
V
DD
= 3.0 V
V
SS
= GND
Ta = 25°C
10 μ
100 μ 1 m
10 m
P
D
– Ta
Ambient temperature Ta (°C)
Power dissipation P
D
(mW)
300
0
−40
100
200
0 40 80 120
This data was obtained from an unmounted
standalone IC. If the IC is mounted on a PCB, its
power dissipation will be greater. Note that,
depending on the PCB’s thermal characteristics, the
curves may differ substantially from those shown.
TC75S51F/FU
TC75S51FE
P1-P3P4-P6P7-P9P10-P10

TC75S51FUTE85LF

Mfr. #:
Buy TC75S51FUTE85LF
Manufacturer:
Toshiba
Description:
Operational Amplifiers - Op Amps X34 Pb USV OP-AMP (C-MOS)
Lifecycle:
New from this manufacturer.
Delivery:
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