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NCS2300MUTAG

P1-P3P4-P6P7-P7
NCS2300
http://onsemi.com
4
Table 4. OPERATING RANGES
Rating Conditions Symbol Min Typ Max Unit
Power Supply Voltage V
DD
1.6 1.8 2.75 V
Input Voltage L_detect and GND_detect pins V
IN
0 V
DD
V
Input Transition Rise or Fall Rate GND_detect pin
Dt / DV
0 10 ns/V
Bias Voltage on MIC Output V
MIC
0 3.0 V
Ambient Temperature T
A
−40 85 °C
Junction Temperature T
J
−40 125 °C
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
Table 5. ELECTRICAL CHARACTERISTICS Typical values are referenced to T
A
= 25°C, V
DD
= 1.8 V, unless otherwise noted.
Min/max values apply from T
A
= −40°C to 85°C, unless otherwise noted. (Note 5)
Parameter
Test Conditions Symbol Min Typ Max Unit
SUPPLY CHARACTERISTICS
Quiescent Supply Current
V
GND_detect
= 1.8 V or 0 V I
DD
7.5 12
mA
INPUT CHARACTERISTICS OF L_DETECT
Voltage Input Low
V
DD
= 1.8 V V
IL
1.33 V
Voltage Input High V
DD
= 1.8 V V
IH
1.5 V
Propagation Delay to OUT
C
out
= 15 pF, GND_detect = 0 V,
L_detect = 1.31 V to 1.52 V
t
pLH
, t
pHL
480 ns
Low Voltage Input Leakage V
L_detect
= 0 V I
IL
1.8
mA
High Voltage Input Leakage V
L_detect
= 1.8 V I
IH
500 pA
Input Capacitance f = 1 MHz C
IN
3 pF
INPUT CHARACTERISTICS OF GND_DETECT
Voltage Input Low
V
DD
= 1.8 V V
IL
0.63 V
Voltage Input High V
DD
= 1.8 V V
IH
1.17 V
Propagation Delay to OUT
C
out
= 15 pF, R
L
= 1 MW, L_detect = 0 V,
GND_detect = 0 to 1.8 V
t
pLH
, t
pHL
550 ps
Low Voltage Input Leakage V
GND_detect
= 0 V I
IL
1.8
mA
High Voltage Input Leakage V
GND_detect
= 1.8 V I
IH
500 pA
Input Capacitance f = 1 MHz C
IN
3 pF
OUTPUT CHARACTERISTICS OF OUT
Voltage Output Low
V
DD
= 1.8 V, I
OH
= 0.1 mA V
OL
0.10 V
Voltage Output High V
DD
= 1.8 V, I
OH
= −0.1 mA V
OH
1.70 V
Rise Time
C
OUT
= 15 pF, R
L
= 1 MW
t
rise
7 ns
Fall Time
C
OUT
= 15 pF, R
L
= 1 MW
t
fall
4 ns
CHARACTERISTICS OF MIC
Drain−Source On Resistance of NMOS
V
DD
= 1.8 V, I
MIC
= 1 mA R
DS(on)
0.9 1.4
W
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Guaranteed by characterization and/or design.
NCS2300
http://onsemi.com
5
TYPICAL CHARACTERISTICS
Figure 3. Supply Current vs. Temperature Figure 4. V
OH
vs. I
OH
of OUT Pin
Figure 5. V
OL
vs. I
OL
of OUT Pin
MIC DRAIN CURRENT (mA)
1
Figure 6. On Resistance vs. Drain Current at
V
DD
= 1.6 V
21.81.2
ON RESISTANCE (W)
2
V
DD
= 1.6 V
MIC DRAIN CURRENT (mA)
Figure 7. On Resistance vs. Drain Current at
V
DD
= 1.8 V
ON RESISTANCE (W)
2
ON RESISTANCE (W)
MIC DRAIN CURRENT (mA)
Figure 8. On Resistance vs. Drain Current at
V
DD
= 2.0 V
T = −40°C
T = 25°C
T = 85°C
1.4 1.6
V
DD
= 1.8 V
T = −40°C
T = 25°C
T = 85°C
T = −40°C
T = 25°C
T = 85°C
V
DD
= 2.0 V
2
V
DD
= 1.6 V
V
DD
= 1.8 V
V
DD
= 2.0 V
TEMPERATURE (°C)
SUPPLY CURRENT (mA)
9.5
−50 10075−25 0 25 50
9.25
9
8.75
8.5
8.25
8
7.75
7.5
7.25
7
SINK CURRENT (mA)
−5 0−1−4
VOLTAGE OUTPUT HIGH (V)
1.8
−3 −2
1.78
1.76
1.74
1.72
1.7
1.68
1.66
1.64
1.62
1.6
T = −40°C
T = 25°C
T = 85°C
SOURCE CURRENT (mA)
VOLTAGE OUTPUT LOW (mV)
180
054123
160
140
120
100
80
60
40
20
0
T = −40°C
T = 25°C
T = 85°C
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
121.81.2 1.4 1.6 121.81.2 1.4 1.6
NCS2300
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6
TYPICAL CHARACTERISTICS
Figure 9. Low to High Propagation to OUT
with Changing Input Overdrive of L_detect
Figure 10. High to Low Propagation to OUT
with Changing Input Overdrive of L_detect
Input
100 mV
50 mV
20 mV
10 mV
V
DD
= 1.8 V
TIME (ns)
VOLTAGE (V)
2.25
−100 7006000 100 200 500
2
1.75
1.5
1.25
1
0.75
0.5
0.25
0
−0.25
300 400
2
1.75
1.5
1.25
1
0.75
0.5
0.25
0
−0.25
TIME (ns)
VOLTAGE (V)
−100 7006000 100 200 500300 400
Input
100 mV
50 mV
20 mV
10 mV
V
DD
= 1.8 V
APPLICATIONS INFORMATION
SUPPLY VOLTAGE
The NCS2300 works with a wide range of supply voltages
from 1.6 V to 2.75 V. A 0.1 mF decoupling capacitor should
be placed as close as possible to the VDD pin. Since the
NCS2300 has built in latch-up immunity up to 800 mA,
series resistors are not recommended on VDD.
AUDIO JACK DETECTION
The NCS2300 is designed to simplify the detection of a
stereo audio connector with a microphone contact. When the
headset is not connected, the internal pull−up resistors on
L_detect and GND_detect pull those pins high. When the
headset is connected to the switched audio jack, the headset
ground and left audio channel trigger L_detect and
GND_detect to logic low.
The NCS2300 can work with either the CTIA or OMTP
standard. In order to support both standards simultaneously,
a cross point switch and additional circuitry is necessary to
detect and swap the ground and microphone pins.
MIC PIN BIASING
The typical application schematic in Figure 1 shows the
recommended 2.2 kW pull−up resistor to the MIC bias
voltage. The MIC bias voltage can exceed VDD and can go
as high as 3 V. While the headset is not detected, the internal
NMOS transistor is enabled to mute the MIC signal. In the
typical application scenario with a 2.2 kW pull−up to a 2.3 V
MIC bias voltage, the MIC pin is pulled near 1 mV when the
headset is not present. The internal NMOS transistor is
optimized to sink up to 2 mA of current, allowing some
flexibility in the selection of the pull−up resistor and MIC
bias voltage.
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NCS2300MUTAG

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Manufacturer:
ON Semiconductor
Description:
Interface - Specialized HEADSET DETECTION INTERFA
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