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FKV550N
P1-P3
P4-P6
P7-P8
5
0V
/ 50A High Current Low R
DS(ON)
N ch Trench Power MOSFET
FKV550N
FKV550N-
DS
Rev.2.0
SANKEN ELECTRIC CO
.,LT
D.
1
Oct.
31
2
01
4
Features
V
DS
--------------------------------------------------------
50 V
I
D
----------------------------------------------------------
50
A
R
DS
(
ON
)
---------------
12
mΩ typ.(V
GS
=
10
V,
I
D
=
25
A)
Built-in Gate protect
ion diode
100% UIL tested
RoHS Compliant
Applications
DC
-DC Converters
Syncronous Rectificatio
n
Absolute Maximum Ratings
Unless otherwise spec
ified, T
A
= 25 °C
Package
TO220F-
3L
Not to scale
Equivalent circuit
Characteristic
Symbol
Test conditions
Rating
Unit
FKV550N
Drain to Source Voltage
V
DSS
5
0
V
Gate to Source Voltage
V
GSS
±
2
0
V
Continuous Drain Current
I
D(DC)
50
A
Pulsed Drain Current
I
D(PULSE)
PW ≤ 100 µs
Duty cycle ≤1 %
±
150
A
Maximum Po
w
er Dissipatio
n
P
D
T
C
= 25 °C
35
W
Single Pulse Avalanc
he Energy
E
AS
V
DD
= 20 V, I
LP
=
50A
unclamped, R
g
= 50 Ω
L =
72
μH
See Figure 1
150
mJ
Maximum avalanche c
urrent
I
AS
50
A
Thermal Resistance
θ
ｃｈ
-C
3
.
5
7
°C/W
θ
ｃｈ
-A
6
2
.
5
°C/W
Operating Junction T
emperature
T
ｃｈ
150
°C
Storage Temperature
T
stg
−
55 to 15
0
°C
(1) (2) (3)
G
D
S
D(2)
S(3)
G(1)
FKV550N
FKV550N-
DS
Rev.2.0
SANKEN ELECTRIC CO
.,LT
D.
2
Oct.
31
2
01
4
Electrical Characteristics
Unless otherwise spec
ified, T
A
= 25 °C
Characteristic
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Drain to Source Breakdo
wn
Voltage
V
(BR)DSS
I
D
= 100
μ
A, V
GS
= 0 V
5
0
−
−
V
Drain to Source Leakage C
urrent
I
DSS
V
DS
=
50 V, V
GS
= 0 V
−
−
100
µA
Gate to Source Leakage
Current
I
GSS
V
GS
= ±
20
V
−
−
±
1
0
µA
Gate Threshold Vo
lta
ge
V
TH
V
DS
= 10 V, I
D
=
250
µ
A
3
.0
−
4.
2
V
Static Drain to Source
On
-Resistance
R
DS(ON)
I
D
=
25
A
V
GS
= 10 V
−
12
15
mΩ
Forward Transco
nductance
Re(y
fs
)
V
DS
= 10 V, I
D
=
25
A
17
−
S
Input Capacitance
C
iss
V
DS
= 10 V
V
GS
= 0 V
F = 1 MHz
−
2000
−
pF
Output Capacitance
C
oss
−
1
2
00
−
Reverse Transfer Capacita
nce
C
rss
−
50
0
−
Turn-On Delay Ti
me
t
d(on)
V
DD
≒
25
V
I
D
=
25
A
R
L
=
1
Ω
V
GS
= 10 V
R
g
= 10 Ω
See Figure 2
−
3
0
−
ns
Rise Time
t
r
−
360
−
Turn-Off Delay Ti
me
t
d(off)
−
130
−
Fall Time
t
f
−
1
2
0
−
Source-Drain Diode Fo
rward
Voltage
V
SD
I
SD
=
50 A, V
GS
= 0 V
−
1.0
1.5
V
FKV550N
FKV550N-
DS
Rev.2.0
SANKEN ELECTRIC CO
.,LT
D.
3
Oct.
31
2
01
4
Test Circuit and Waveform
V
DD
I
L
V
DS
R
G
V
GS
0 V
I
L
p
I
L
V
(
B
R
)
D
S
S
V
D
D
V
D
S
(a) Test Circuit
(b)
Waveforms
Figure 1 Unclamped Inductive
I
D
V
DS
V
DD
R
G
R
L
V
GS
0 V
P.W. = 10
μ
s
Duty cycle
≤
1 %
t
d(on)
t
r
t
on
t
d(off)
t
f
t
off
90%
10%
90%
10%
V
GS
V
DS
(a) Test Circuit
(b)
Waveforms
Figure 2 Switching Time
P1-P3
P4-P6
P7-P8
FKV550N
Mfr. #:
Buy FKV550N
Manufacturer:
Description:
MOSFET N-CH 50V 50A TO-220F
Lifecycle:
New from this manufacturer.
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