IXFC30N60P Datasheet IXFR30N60P, IXFC30N60P | P1-P3

DS99341E(03/06)

PolarHV

TM

HiPerFET

Power MOSFET

V

DSS

= 600 V

I

D25

=15 A

R

DS(on)

≤≤

≤ 250 m

ΩΩ

Ω

t

rr

≤≤

≤ 250 ns

N-Channel Enhancement Mode

Fast Recovery Diode

Avalanche Rated

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, unless otherwise specified) Min. Typ. Max.

BV

DSS

V

GS

= 0 V, I

D

= 250 μA 600 V

V

GS(th)

V

DS

= V

GS

, I

D

= 4 mA 3.0 5.0 V

I

GSS

V

GS

= ±30 V, V

DS

= 0 ±100 nA

I

DSS

V

DS

= V

DSS

25 μA

V

GS

= 0 V T

J

= 125°C 500 μA

R

DS(on)

V

GS

= 10 V, I

D

= 15 A 250 mΩ

Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %

Symbol Test Conditions Maximum Ratings

V

DSS

T

J

= 25°C to 150°C 600 V

V

DGR

T

J

= 25°C to 150°C; R

GS

= 1 MΩ 600 V

V

GSS

Continuous ±30 V

V

GSM

Transient ±40 V

I

D25

T

C

= 25°C15A

I

DM

T

C

= 25°C, pulse width limited by T

JM

80 A

I

AR

T

C

= 25°C30A

E

AR

T

C

= 25°C50mJ

E

AS

T

C

= 25°C 1.5 J

dv/dt I

S

≤ I

DM

, di/dt ≤ 100 A/μs, V

DD

≤ V

DSS

, 10 V/ns

T

J

≤ 150°C, R

G

= 3 Ω

P

D

T

C

= 25°C 166 W

T

J

-55 ... +150 °C

T

JM

150 °C

T

stg

-55 ... +150 °C

T

L

1.6 mm (0.062 in.) from case for 10 s 300 °C

V

ISOL

50/60 Hz, RMS, t = 1minute, leads-to-tab 2500 V~

F

C

Mounting Force (IXFC) 11..65 / 2.5..15 N/lb

(IXFR) 20..120 / 4.5..25 N/lb

Weight ISOPLUS220 2 g

ISOPLUS247 5 g

IXFC 30N60P

IXFR 30N60P

Electrically Isolated Back Surface

G = Gate D = Drain

S = Source

Features

z

Silicon chip on Direct-Copper-Bond

substrate

- High power dissipation

- Isolated mounting surface

- 2500V electrical isolation

z

Low drain to tab capacitance(<30pF)

Applications

z

DC-DC converters

z

Battery chargers

z

Switched-mode and resonant-mode

power supplies

z

DC choppers

z

AC motor control

Advantages

z

Easy assembly

z

Space savings

z

High power density

Isolated back surface

ISOPLUS220

TM

(IXFC)

E153432

G

D

S

ISOPLUS247

TM

(IXFR)

E153432

Isolated back surface

IXYS reserves the right to change limits, test conditions, and dimensions.

IXFC 30N60P

IXFR 30N60P

Symbol Test Conditions Characteristic Values

(T

J

= 25°C unless otherwise specified)

Min. Typ. Max.

g

fs

V

DS

= 20 V; I

D

= 15 A, pulse test 15 27 S

C

iss

3820 pF

C

oss

V

GS

= 0 V, V

DS

= 25 V, f = 1 MHz 360 pF

C

rss

28 pF

t

d(on)

22 ns

t

r

V

GS

= 10 V, V

DS

=

V

DSS

,

I

D

= 15 A 20 ns

t

d(off)

R

G

= 3 Ω (External) 75 ns

t

f

25 ns

Q

g(on)

85 nC

Q

gs

V

GS

= 10 V, V

DS

= 0.5 V

DSS

, I

D

= 15 A 26 nC

Q

gd

28 nC

R

thJC

0.75 °C/W

R

thCS

0.21 °C/W

Source-Drain Diode Characteristic Values

(T

J

= 25°C unless otherwise specified)

Symbol Test Conditions Min. Typ. Max.

I

S

V

GS

= 0 V 30 A

I

SM

Repetitive 80 A

V

SD

I

F

= I

S

, V

GS

= 0 V, 1.5 V

Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %

t

rr

I

F

= 25A, -di/dt = 100 A/μs 200 ns

I

RM

V

R

= 100 V; V

GS

= 0 V 8 A

Q

RM

0.6 μC

IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585

one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2

ISOPLUS220 (IXFC) Outline

IXYS CO 0177 R0

Note:

Bottom heatsink (Pin 4) is

electrically isolated from Pin

1,2, or 3.

ISOPLUS247 (IXFR) Outline

IXFC 30N60P

IXFR 30N60P

Fig. 6. Drain Current vs. Case

Temperature

0

2

4

6

8

10

12

14

16

-50 -25 0 25 50 75 100 125 150

T

C

- Degrees Centigrade

I

D

- Amperes

Fig. 2. Extended Output Characteristics

@ 25

º

C

0

5

10

15

20

25

30

35

40

45

50

55

60

0 3 6 9 12 15 18 21 24 27 30

V

D S

- Volts

I

D

- Amperes

V

GS

= 10V

8V

7V

5V

6.5V

6V

5.5V

Fig. 3. Output Characteristics

@ 125

º

C

0

3

6

9

12

15

18

21

24

27

30

0 2 4 6 8 10 12 14 16 18

V

D S

- Volts

I

D

- Amperes

V

GS

= 10V

7V

5.5V

5V

4.5V

6V

Fig. 1. Output Characteristics

@ 25

º

C

0

3

6

9

12

15

18

21

24

27

30

012345678

V

D S

- Volts

I

D

- Amperes

V

GS

= 10V

8V

7V

5.5V

5V

6.5V

6V

Fig. 4. R

DS(on

)

Norm alized to I

D

= 15A

Value vs. Junction Temperature

0.4

0.7

1

1.3

1.6

1.9

2.2

2.5

2.8

3.1

3.4

-50 -25 0 25 50 75 100 125 150

T

J

- Degrees Centigrade

R

D S ( o n )

- Normalized

I

D

= 30A

I

D

= 15A

V

GS

= 10V

Fig. 5. R

DS(on)

Norm alized to

I

D

= 15A Value vs. Drain Current

0.8

1

1.2

1.4

1.6

1.8

2

2.2

2.4

2.6

2.8

3

0 5 10 15 20 25 30 35 40 45 50 55 60

I

D

- Amperes

R

D S ( o n )

- Normalized

T

J

= 125

º

C

T

J

= 25

º

C

V

GS

= 10V

IXFC30N60P

IXFC30N60P

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