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TIP3055G

P1-P3P4-P6
TIP3055 (NPN), TIP2955 (PNP)
http://onsemi.com
4
TIP3055
TIP2955
Figure 1. DC Current Gain
I
C
, COLLECTOR CURRENT (AMP)
0.1
100
1000
10
1.0 2.00.3 7.0 10
V
CE
= 4.0 V
T
J
= 25°C
h
FE
, DC CURRENT GAIN
0.2 0.5 0.7 3.0 5.0
I
C
, COLLECTOR CURRENT (AMPS)
10
5.0
0.1
0.3
2.0
3.0
Figure 2. Maximum Rated Forward Bias
Safe Operating Area
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
1.0 2.0 4.0 6.0 10 20
0.2
0.5
1.0
20
30
50
100
40 60
SECONDARY BREAKDOWN LIMIT
BONDING WIRE LIMIT
THERMAL LIMIT @ T
C
= 25°C
T
J
= 150°C
300 ms
1.0ms
10ms
dc
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
− V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 2 is based on T
C
= 25°C; T
J(pk)
is
variable depending on power level. Second breakdown
pulse limits are valid for duty cycles to 10% but must be
derated for temperature.
TIP3055 (NPN), TIP2955 (PNP)
http://onsemi.com
5
PACKAGE DIMENSIONS
SOT−93 (TO−218)
CASE 340D−02
ISSUE E
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
A
D
V
G
K
S
L
U
B
Q
123
4
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
E
C
J
H
DIM MIN MAX MIN MAX
INCHESMILLIMETERS
A --- 20.35 --- 0.801
B 14.70 15.20 0.579 0.598
C 4.70 4.90 0.185 0.193
D 1.10 1.30 0.043 0.051
E 1.17 1.37 0.046 0.054
G 5.40 5.55 0.213 0.219
H 2.00 3.00 0.079 0.118
J 0.50 0.78 0.020 0.031
K 31.00 REF 1.220 REF
L --- 16.20 --- 0.638
Q 4.00 4.10 0.158 0.161
S 17.80 18.20 0.701 0.717
U 4.00 REF 0.157 REF
V 1.75 REF 0.069
TO−247
CASE 340L−02
ISSUE F
N
P
A
K
W
F
D
G
U
E
0.25 (0.010)
M
YQ
S
J
H
C
4
123
−T−
−B−
−Y−
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
2 PL
3 PL
0.63 (0.025)
M
TB
M
−Q−
L
DIM MIN MAX MIN MAX
INCHESMILLIMETERS
A 20.32 21.08 0.800 8.30
B 15.75 16.26 0.620 0.640
C 4.70 5.30 0.185 0.209
D 1.00 1.40 0.040 0.055
E 1.90 2.60 0.075 0.102
F 1.65 2.13 0.065 0.084
G 5.45 BSC 0.215 BSC
H 1.50 2.49 0.059 0.098
J 0.40 0.80 0.016 0.031
K 19.81 20.83 0.780 0.820
L 5.40 6.20 0.212 0.244
N 4.32 5.49 0.170 0.216
P --- 4.50 --- 0.177
Q 3.55 3.65 0.140 0.144
U 6.15 BSC 0.242 BSC
W 2.87 3.12 0.113 0.123
STYLE 3:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
TIP3055 (NPN), TIP2955 (PNP)
http://onsemi.com
6
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TIP3055/D
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TIP3055G

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Bipolar Transistors - BJT 15A 60V 80W NPN
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