Vishay Siliconix
Si5463EDC
Document Number: 71364
S09-0129-Rev. D, 02-Feb-09
www.vishay.com
1
P-Channel 20-V (D-S) MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Available
• ESD Protected
b
5000 V
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
(Ω)I
D
(A)
- 20
0.062 at V
GS
= - 4.5 V
- 5.1
0.068 at V
GS
= - 3.6 V
- 4.9
0.085 at V
GS
= - 2.5 V
- 4.4
0.120 at V
GS
= - 1.8 V
- 3.7
Ordering Information: Si5463EDC-T1-E3 (Lead (Pb)-free)
Si5463EDC-T1-GE3 (Lead (Pb)-free and Halogen-free)
1206-8 ChipFET
D
D
D
G
D
D
D
S
1
Bottom View
Marking Code
LB XX
Lot Traceability
and Date Code
Part #
Code
®
S
5.4 kΩ
D
P-Channel MOSFET
G
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. When using HBM. The MM rating is 300 V.
c. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result
of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure
adequate bottom side solder interconnection.
d. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
ABSOLUTE MAXIMUM RATINGS T
A
= 25 °C, unless otherwise noted
Parameter Symbol 5 s Steady State Unit
Drain-Source Voltage
V
DS
- 20
V
Gate-Source Voltage
V
GS
± 12
Continuous Drain Current (T
J
= 150 °C)
a
T
A
= 25 °C
I
D
- 5.1 - 3.8
A
T
A
= 85 °C
- 3.7 - 2.7
Pulsed Drain Current
I
DM
- 15
Continuous Source Current
a
I
S
- 1.9 - 1.0
Maximum Power Dissipation
a
T
A
= 25 °C
P
D
2.3 1.25
W
T
A
= 85 °C
1.2 0.65
Operating Junction and Storage Temperature Range
T
J
, T
stg
- 55 to 150
°C
Soldering Recommendations (Peak Temperature)
c, d
260
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient
a
t ≤ 5 s
R
thJA
45 55
°C/W
Steady State 84 100
Maximum Junction-to-Foot (Drain) Steady State
R
thJF
20 25