SIDC59D170HX1SA2

SIDC59D170H
Edited by INFINEON Technologies AI DP PSD CLS, L 4481A, Edition 2, 2.11.2004
Fast switching diode chip in EMCON 3 -Technology
This chip is used for:
EUPEC power modules
FEATURES:
1700V EMCON 3 technology 200 µm chip
soft, fast switching
low reverse recovery charge
small temperature coefficient
Applications:
resonant applications, drives
A
C
Chip Type V
R
I
F
Die Size Package Ordering Code
SIDC59D170H
1700V
100A 7.7 x 7.7 mm
2
sawn on foil
Q67050-A4176-
A001
MECHANICAL PARAMETER:
Raster size 7.7 x 7.7
Area total / active 59.29 / 45.35
Anode pad size 5.68 x 5.68
mm
2
Thickness 200 µm
Wafer size 150 mm
Flat position 180 deg
Max. possible chips per wafer 238 pcs
Passivation frontside Photoimide
Anode metallization 3200 nm Al Si Cu
Cathode metallization
Ni Ag system
suitable for epoxy and soft solder die bonding
Die bond electrically conductive glue or solder
Wire bond Al, 500µm
Reject Ink Dot Size 0.65mm; max 1.2mm
Recommended Storage Environment
store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C
SIDC59D170H
Edited by INFINEON Technologies AI DP PSD CLS, L 4481A, Edition 2, 2.11.2004
Maximum Ratings
Parameter Symbol Condition Value Unit
Repetitive peak reverse voltage V
RRM
1700 V
Continuous forward current limited by
T
jmax
I
F
100
Single pulse forward current
(depending on wire bond configuration)
I
FSM
t
P
= 10 ms sinusoidal 540
Maximum repetitive forward current
limited by T
jmax
I
FRM
200
A
Operating junction and storage
temperature
T
j
, T
stg
-55...+150
°C
Static Electrical Characteristics (tested on chip), T
j
=25 °C, unless otherwise specified
Value
Parameter Symbol
Conditions
min. Typ. max.
Unit
Reverse leakage current I
R
V
R
=1700V
T
j
=25°C
27 µA
Cathode-Anode
breakdown Voltage
V
Br
I
R
=0.25mA T
j
=25°C 1700
V
Forward voltage drop
V
F
I
F
=100A
T
j
=25°C
1.8
V
Dynamic Electrical Characteristics, at T
j
= 25 °C, unless otherwise specified, tested at component
Value
Parameter Symbol
Conditions
min. Typ. max.
Unit
I
RRM1
T
j
= 25 °C
123
Peak recovery current
I
RRM2
I
F
=100A
di/dt=1170A/µs
V
R
=900V
T
j
= 125 °C
133
A
Q
rr1
T
j
=25°C
26.7
Reverse recovery charge
Q
rr2
I
F
=100A
di/dt=1170A/µs
V
R
=900V
T
j
=125°C
43.3
µC
E
rec1
T
j
=25°C
13.3 Peak recovery energy
E
rec2
I
F
=100A
di/dt=1170A/µs
V
R
=900V
T
j
=125°C
23.3
mJ
SIDC59D170H
Edited by INFINEON Technologies AI DP PSD CLS, L 4481A, Edition 2, 2.11.2004
CHIP DRAWING:

SIDC59D170HX1SA2

Mfr. #:
Manufacturer:
Infineon Technologies
Description:
DIODE GEN PURP 1.7KV 100A WAFER
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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