MC12095
http://onsemi.com
2
Table 2. ATTRIBUTES
Characteristics Value
Internal Input Pulldown Resistor N/A
Internal Input Pullup Resistor N/A
ESD Protection Human Body Model
Machine Model
Charged Device Model
> 4 kV
> 200 V
> 2 kV
Moisture Sensitivity, Indefinite Time Out of Drypack (Note 1) Pb Pkg Pb−Free Pkg
SOIC−8
DFN8
Level 1
Level 1
Level 1
Level 1
Flammability Rating Oxygen Index: 28 to 34 UL 94 V−0 @ 0.125 in
Transistor Count 125 Devices
Meets or exceeds JEDEC Spec EIA/JESD78 IC Latchup Test
1. For additional information, see Application Note AND8003/D.
Table 3. MAXIMUM RATINGS
Symbol Rating Value Unit
V
CC
Power Supply Voltage, Pin 2 −0.5 to 6.0 Vdc
T
A
Operating Temperature Range −40 to 85 °C
T
stg
Storage Temperature Range −65 to 150 °C
I
O
Maximum Output Current, Pin 4 8.0 mA
q
JC
Thermal Resistance (Junction−to−Case) (Note 2) DFN8 35 to 40 °C/W
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
NOTE: ESD data available upon request.
2. JEDEC standard multilayer board − 2S2P (2 signal, 2 power). For DFN8 only, thermal exposed pad must be connected to a sufficient thermal
conduit. Electrically connect to the most negative supply (GND) or leave unconnected, floating open.
Table 4. ELECTRICAL CHARACTERISTICS (V
CC
= 2.7 to 5.5 V; T
A
= −40 to 85°C, unless otherwise noted.)
Symbol
Characteristic Min Typ Max Unit
f
t
Toggle Frequency (Sine Wave) 500 3.0 2.5 GHz
I
CC
Supply Current − 8.7 14 mA
I
SB
Stand−By Current − 100 200
mA
V
IH1
Stand−By Input HIGH (SB) 2.0 − V
CC
+ 0.5 V V
V
IL1
Stand−By Input LOW (SB) GND − 0.8 V
V
IH2
Divide Ratio Control Input HIGH (SW) V
CC
− 0.4 V
CC
V
CC
+ 0.5 V V
V
IL2
Divide Ratio Control Input LOW (SW) OPEN OPEN OPEN
V
OUT
Output Voltage Swing (2pF Load) 500−1000 MHz Input
1000−1500 MHz Input
1500−2500 MHz Input
800
400
200
−
450
250
−
−
−
mVpp
V
IN
Input Voltage Sensitivity 200 − 1000 mVpp