Vishay Siliconix
Si7136DP
Document Number: 73601
S09-0222-Rev. B, 09-Feb-09
www.vishay.com
1
N-Channel 20-V (D-S) MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Available
• Ultra-Low On-Resistance Using High
Density TrenchFET
®
Gen II Power
MOSFET Technology
•Q
g
Optimized
• 100 % R
g
Tested
• 100 % UIS Tested
APPLICATIONS
•
Low-Side DC/DC Conversion
- Notebook
- Server
- Workstation
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
(Ω)
I
D
(A)
a
Q
g
(Typ.)
20
0.0032 at V
GS
= 10 V
30
24.5
0.0045 at V
GS
= 4.5 V
30
Ordering Information: Si7136DP-T1-E3 (Lead (Pb)-free)
Si7136DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
1
2
3
4
5
6
7
8
S
S
S
G
D
D
D
D
6.15 mm
5.15 mm
PowerPAK SO-8
Bottom View
N-Channel MOSFET
G
D
S
Notes:
a. Based on T
C
= 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile (www.vishay.com/doc?73461
). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 70 °C/W.
ABSOLUTE MAXIMUM RATINGS T
A
= 25 °C, unless otherwise noted
Parameter Symbol Limit Unit
Drain-Source Voltage
V
DS
20
V
Gate-Source Voltage
V
GS
± 20
Continuous Drain Current (T
J
= 150 °C)
T
C
= 25 °C
I
D
30
A
T
C
= 70 °C
30
T
A
= 25 °C
29.5
b, c
T
A
= 70 °C
20
b, c
Pulsed Drain Current
I
DM
70
Continuous Source-Drain Diode Current
T
C
= 25 °C
I
S
30
T
A
= 25 °C
4.5
b, c
Avalanche Current
L = 0.1 mH
I
AS
30
Single-Pulse Avalanche Energy
E
AS
45 mJ
Maximum Power Dissipation
T
C
= 25 °C
P
D
39
W
T
C
= 70 °C
25
T
A
= 25 °C
5
b, c
T
A
= 70 °C
3.2
b, c
Operating Junction and Storage Temperature Range
T
J
, T
stg
- 55 to 150
°C
Soldering Recommendations (Peak Temperature)
d, e
260
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient
b, f
t ≤ 10 s
R
thJA
20 25
°C/W
Maximum Junction-to-Case (Drain) Steady State
R
thJC
2.1 3.2