IMX3T108

1/3
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c
2011 ROHM Co., Ltd. All rights reserved.
2011.12 - Rev.B
2.0
1.3
0.9
0.7
0.65 0.65
UMX3N
Each lead has same dimensions
ROHM : UMT6
EIAJ : SC-88
0~0.1
(
6
)
0.15
0.1Min.
2.1
0.2
1.25
(
1
)
(
4
)
(
3
)
(
2
)
(
5
)
IMX3
Each lead has same dimensionsROHM : SMT6
EIAJ : SC-74
(
6
)(
5
)(
4
)
0.3Min.
0.15
0.3
1.1
0.8
0~0.1
(
3
)
2.8
1.6
1.9
2.9
0.95
(
2
)
0.95
(
1
)
Each lead has same dimensionsROHM : EMT6
EMX3
0.22
1.2
1.6
(
1
)
(
2
)(
5
)
(
3
)
(
6
)
(
4
)
0.13
0.5
0.5
0.5
1.0
1.6
General purpose (dual transistors)
EMX3 / UMX3N / IMX3
Features Dimensions (Unit : mm)
Two 2SC2412AK chips in a EMT or UMT or SMT package.
Inner circuits
(1)(2)(3)
(4) (5) (6)
(6)(5)(4)
(3) (2) (1)
EMX3 / UMX3N IMX3
Tr
2
Tr
1
Tr
2
Tr
1
Package, marking, and packaging specifications
Type
EMX3
EMT6
X3
T2R
8000
UMX3N
UMT6
X3
TR
3000
IMX3
SMT6
X3
T108
3000
Package
Marking
Code
Basic ordering unit (pieces)
Absolute maximum ratings (Ta=25C)
Parameter Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Limits
60
50
7
150
300(TOTAL)
150(TOTAL)
EEMX3 / UMX3N
IMX3
150
55
to
+150
Unit
V
V
V
mA
mW
°C
°C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
1 120mW per element must not be exceeded.
2 200mW per element must not be exceeded.
1
2
Electrical characteristics (Ta=25C)
Parameter Symbol Min. Typ. Max.
Unit
Conditions
Transition frequency
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
60
50
7
120
180
0.1
0.1
0.4
560
V
V
V
μA
μA
V
MHz
Cob
2 3.5 pF
I
C
=50μA
I
C
=1mA
I
E
=50μA
V
CB
=60V
V
EB
=7V
V
CE
=12V, I
E
=−2mA, f=100MHz
V
CB
=12V, I
E
=0mA, f=1MHz
I
C
/I
B
=50mA/5mA
V
CE
=6V, I
C
=1mA
Transition frequency of the device.
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Output capacitance
2/3
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c
2011 ROHM Co., Ltd. All rights reserved.
2011.12 - Rev.B
Data Sheet
EMX3 / UMX3N / IMX3
Electrical characteristics curves
Fig.1 Grounded emitter propagation
characteristics
0
0.1
0.2
0.5
2
20
50
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
1
5
10
Ta
=
100°C
V
CE
=6V
COLLECTOR CURRENT : I
C
(mA)
BASE TO EMITTER VOLTAGE : V
BE
(V)
25°C
55°C
Fig.2 Grounded emitter output
characteristics ( Ι )
0
20
40
60
80
100
0.4 0.8 1.2 1.6 2.00
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
0.05mA
0.10mA
0.15mA
0.25mA
0.30mA
0.35mA
0.20mA
Ta=25°C
I
B
=0A
0.40mA
0.50mA
0.45mA
0
0
2
8
10
4 8 12 16
4
6
20
I
B
=0A
Ta=25°C
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
3μA
6μA
9μA
12μA
15μA
18μA
21μA
24μA
27μA
30μA
Fig.3 Grounded emitter output
characteristics ( ΙΙ )
0.2
20
10
0.5 1 2 5 10 20 50 100 200
50
100
200
500
V
CE
=5V
3V
1V
Ta=25°C
Fig.4 DC current gain vs.
collector current ( Ι )
DC CURRENT GAIN : h
FE
COLLECTOR CURRENT : I
C
(mA)
0.2 0.5 1 2 5 10 20 50 100 200
20
10
50
100
200
500
25°C
55°C
Ta=100°C
V
CE
=
5V
Fig.5 DC current gain vs.
collector current ( ΙΙ )
DC CURRENT GAIN : h
FE
COLLECTOR CURRENT : I
C
(mA)
Fig. 6 Collector-emitter saturation
voltage vs. collector current
0.2
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
COLLECTOR CURRENT : I
C
(mA)
0.01
0.02
0.05
0.1
0.2
0.5
0.5 1 2 5 10 20 50 100 200
I
C
/I
B
=50
20
10
Ta=25°C
Fig.7 Collector-emitter saturation
voltage vs. collector current ( Ι )
0.2
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
COLLECTOR CURRENT : I
C
(mA)
0.01
0.02
0.05
0.1
0.2
0.5
0.5 1 2 5 10 20 50 100 200
I
C
/I
B
=10
Ta=100°C
25°C
55°C
Fig.8 Collector-emitter saturation
voltage vs. collector current (ΙΙ)
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
COLLECTOR CURRENT : I
C
(mA)
0.2
0.01
0.02
0.05
0.1
0.2
0.5
0.5 1 2 5 10 20 50 100
I
C
/I
B
=50
Ta=100°C
25°C
55°C
Fig.9 Gain bandwidth product vs.
emitter current
50
0.5 1 2 5 10 20 50 100
100
200
500
Ta=25°C
V
CE
=6V
EMITTER CURRENT : I
E
(mA)
TRANSITION FREQUENCY : f
T
(MHz)
3/3
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c
2011 ROHM Co., Ltd. All rights reserved.
2011.12 - Rev.B
Data Sheet
EMX3 / UMX3N / IMX3
Fig.10 Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
EMITTER TO BASE VOLTAGE : V
EB
(V)
COLLECTOR OUTPUT CAPACITANCE : Cob (
pF)
EMITTER INPUT CAPACITANCE : Cib (
pF)
0.2 0.5 1 2 5 10 20 50
1
2
5
10
20
Cob
Ta=25°C
f
=
1MHz
I
E
=0A
I
C
=0A
Cib
Fig.11 Base-collector time constant
vs. emitter current
0.2 0.5 1 2 5 10
BASE COLLECTOR TIME CONSTANT : Cc·r
bb' (ps)
EMITTER CURRENT : I
E
(mA)
10
20
50
100
200
Ta=25°C
f=32MH
Z
V
CB
=6V

IMX3T108

Mfr. #:
Manufacturer:
Description:
Bipolar Transistors - BJT DUAL NPN 50V 150MA SOT-457
Lifecycle:
New from this manufacturer.
Delivery:
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