Electrical characteristics TSH343
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2 Electrical characteristics
Table 3. V
CC
= +5V single supply, T
amb
= 25°C (unless otherwise specified)
Symbol Parameter Test conditions Min. Typ. Max. Unit
DC performance
V
DC
Input DC shift
(see
Figure 16 for the behaviour in
temperature)
R
L
=150Ω, T
amb
400 600 670
mV
-40°C < T
amb
< +85°C 530
I
ib
Input bias current
T
amb
, input to GND 18.2 35
μA
-40°C < T
amb
< +85°C 20.7
R
in
Input resistance T
amb
4GΩ
C
in
Input capacitance T
amb
1pF
I
CC
Supply current per buffer
no load, input to GND 14.4 18
mA
-40°C < T
amb
< +85°C 14.9
PSRR
Power supply rejection ratio
(1)
20 log (ΔV
out
/ΔV
CC
)
F=1MHz -45 dB
G DC voltage gain R
L
=150Ω, V
in
= 1V 1.92 1.99 2.05 V/V
DG
Variation of the DC voltage gain
between inputs of 0.3V and 1V
Input step from 0.3V to 1V 0.26 0.8 %
MG
1
Gain matching between 3 channels Input = 1V 0.5 2 %
MG
0.3
Gain matching between 3 channels Input = 0.3V 0.5 2 %
Dynamic performance and output characteristics
Bw
-3dB bandwidth
Small signal V
out
= 20mVp
R
L
=150Ω
160 280
MHz
Gain flatness @ 0.1dB
Small signal V
out
= 20mVp
R
L
=150Ω
65
FPBW Full power bandwidth
V
out
=2V
p-p
, V
ICM
=0.5V,
R
L
=150Ω
130 200 MHz
D Delay between each channel
(2)
0 to 30MHz 0.5 ns
SR Slew rate
(3)
Input step from 0V to 1V,
R
L
=150Ω
500 780 V/μs
V
OH
High level output voltage V
in DC
= +1.5V, R
L
=150Ω 3.7 3.9 V
V
OL
Low level output voltage R
L
=150Ω 40 mV
I
OUT
Output current
V
out
=2V, T
amb
45 90
mA
-40°C < T
amb
< +85°C 82
Output short-circuit current (I
source
) 100 mA
