IRL520LPBF

Document Number: 91467
www.vishay.com
S11-1060-Rev. A, 30-May-11 1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Power MOSFET
IRL520L, SiHL520L
Vishay Siliconix
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
Dynamic dV/dt Rating
Repetitive Avalanche Rated
Logic-Level Gate Drive
•R
DS (on)
Specified at V
GS
= 4 V and 5 V
175°C Operating Temperature
Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The I
2
PAK (TO-262) is a through hole power package
capable of accommodating die size up to HEX-4. It provides
the highest power capability and the lowest possible
on-resistance in any existing surface mount package.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
DD
= 25 V, starting T
J
= 25 °C, L = 3.0 mH, R
G
= 25 , I
AS
= 9.2 A (see fig. 12).
c. I
SD
9.2 A, dI/dt 110 A/μs, V
DD
V
DS
, T
J
175 °C.
d. 1.6 mm from case.
PRODUCT SUMMARY
V
DS
(V) 100
R
DS(on)
()V
GS
= 5 V 0.27
Q
g
(Max.) (nC) 12
Q
gs
(nC) 3.0
Q
gd
(nC) 7.1
Configuration Single
N-Channel MOSFET
G
D
S
I
2
PAK (TO-262)
G
D
S
ORDERING INFORMATION
Package I
2
PAK (TO-262)
Lead (Pb)-free and Halogen-free
SiHL520L-GE3
Lead (Pb)-free
IRL520LPbF
SiHL520L-E3
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
DS
100
V
Gate-Source Voltage V
GS
± 10
Continuous Drain Current V
GS
at 5 V
T
C
= 25 °C
I
D
9.2
AT
C
= 100 °C 6.5
Pulsed Drain Current
a
I
DM
36
Linear Derating Factor 0.40
W/°C
Linear Derating Factor (PCB Mount)
e
0.025
Single Pulse Avalanche Energy
b
E
AS
170 mJ
Avalanche Current
a
I
AR
9.2 A
Repetiitive Avalanche Energy
a
E
AR
6.0 mJ
Maximum Power Dissipation T
C
= 25 °C P
D
60 W
Peak Diode Recovery dV/dt
c
dV/dt 5.5 V/ns
Operating Junction and Storage Temperature Range T
J
, T
stg
- 55 to + 175
°C
Soldering Recommendations (Peak Temperature) for 10 s 300
d
* Pb containing terminations are not RoHS compliant, exemptions may apply
www.vishay.com Document Number: 91467
2 S11-1060-Rev. A, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRL520L, SiHL520L
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient R
thJA
-62
°C/W
Maximum Junction-to-Case (Drain) R
thJC
-2.5
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
DS
V
GS
= 0, I
D
= 250 μA 100 - - V
V
DS
Temperature Coefficient V
DS
/T
J
Reference to 25 °C, I
D
= 1 mA - 0.12 - V/°C
Gate-Source Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= 250 μA 1.0 - 2.0 V
Gate-Source Leakage I
GSS
V
GS
= ± 10 V - - ± 100 nA
Zero Gate Voltage Drain Current I
DSS
V
DS
= 100 V, V
GS
= 0 V - - 25
μA
V
DS
= 80 V, V
GS
= 0 V, T
J
= 150 °C - - 250
Drain-Source On-State Resistance R
DS(on)
V
GS
= 5 V I
D
= 5.5 A
b
- - 0.27
V
GS
= 4 V I
D
= 4.6 A
b
- - 0.38
Forward Transconductance g
fs
V
DS
= 50 V, I
D
= 5.5 A
b
3.2 - - S
Dynamic
Input Capacitance C
iss
V
GS
= 0 V,
V
DS
= 25 V,
f = 1.0 MHz, see fig. 5
- 490 -
pFOutput Capacitance C
oss
- 150 -
Reverse Transfer Capacitance C
rss
-30-
Total Gate Charge Q
g
V
GS
= 5 V
I
D
= 9.2 A, V
DS
= 80 V,
see fig. 6 and 13
b
--12
nC Gate-Source Charge Q
gs
--3.0
Gate-Drain Charge Q
gd
--7.1
Turn-On Delay Time t
d(on)
V
DD
= 50 V, I
D
= 9.2 A,
R
G
= 9 , R
D
= 5.2 , see fig. 10
b
-9.8-
ns
Rise Time t
r
-64-
Turn-Off Delay Time t
d(off)
-21-
Fall Time t
f
-27-
Dynamic
Internal Drain Inductance L
D
Between lead,
6 mm (0.25") from
package and center of
die contact
-4.5-
nH
Internal Source Inductance L
S
-7.5-
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
S
MOSFET symbol
showing the
integral reverse
p - n junction diode
--9.2
A
Pulsed Diode Forward Current
a
I
SM
--36
Body Diode Voltage V
SD
T
J
= 25 °C, I
S
= 9.2 A, V
GS
= 0 V
b
--2.5V
Body Diode Reverse Recovery Time t
rr
T
J
= 25 °C, I
F
= 9.2 A, dI/dt = 100 A/μs
b
- 130 190 ns
Body Diode Reverse Recovery Charge Q
rr
- 0.83 1.0 μC
Forward Turn-On Time t
on
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
D
S
G
S
D
G
Document Number: 91467 www.vishay.com
S11-1060-Rev. A, 30-May-11 3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRL520L, SiHL520L
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Fig. 1 - Typical Output Characteristics, T
C
= 25 °C
Fig. 2 - Typical Output Characteristics, T
C
= 150 °C
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature

IRL520LPBF

Mfr. #:
Manufacturer:
Vishay / Siliconix
Description:
MOSFET N-Chan 100V 9.2 Amp
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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