August 2007 Rev 2 1/11
11
MD2001FX
High voltage NPN power transistor for standard
definition CRT display
Features
State-of-the-art technology:
Diffused collector “Enhanced generation”
Stable performances versus operating
temperature variation
Low base-drive requirements
Tight h
FE
range at operating collector current
Fully insulated power package U.L. compliant
Applications
Horizontal deflection output for monitor and
real flat TV
Description
The MD2001FX is manufactured using Diffused
Collector in Planar Technology adopting new and
enhanced high voltage structure. The new MD
product series show improved silicon efficiency
bringing updated performance to the Horizontal
Deflection stage.
Figure 1. Internal schematic diagram
ISOWATT218FX
1
2
3
Table 1. Device summary
Order code Marking Package Packaging
MD2001FX MD2001FX ISOWATT218FX Tube
www.st.com
Content MD2001FX
2/11
Content
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2.2 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
MD2001FX Electrical ratings
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1 Electrical ratings
Table 3. Thermal data
Table 2. Absolute maximum rating
Symbol Parameter Value Unit
V
CES
Collector-emitter voltage (V
BE
= 0) 1500 V
V
CEO
Collector-emitter voltage (I
B
= 0) 700 V
V
EBO
Collector-base voltage (I
C
= 0) 9 V
I
C
Collector current 12 A
I
CM
Collector peak current (t
P
< 5ms) 18 A
I
B
Base current 6 A
P
TOT
Total dissipation at T
c
= 25°C 58 W
V
ins
Insulation withstand voltage (RMS) from all three leads to
external heatsink
2500 V
T
stg
Storage temperature -65 to 150
°C
T
J
Max. operating junction temperature 150
Symbol Parameter Value Unit
R
thj-case
Thermal resistance junction-case _______________max 2.15 °C/W

MD2001FX

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
Bipolar Transistors - BJT NPN Power Transistor
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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