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IXTH64N65X

P1-P3P4-P5
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTH64N65X
Fig. 8. Input Admittance
0
10
20
30
40
50
60
70
80
90
3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5
V
GS
- Volts
I
D
- Amperes
T
J
= 125ºC
25ºC
- 40ºC
Fig. 7. Maximum Drain Current vs.
Case Temperature
0
10
20
30
40
50
60
70
-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Centigrade
I
D
- Amperes
Fig. 9. Transconductance
0
10
20
30
40
50
60
70
80
90
0 102030405060708090
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40ºC
125ºC
25ºC
Fig. 10. Forward Voltage Drop of Intrinsic Diode
0
20
40
60
80
100
120
140
160
180
200
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
V
SD
- Volts
I
S
- Amperes
T
J
= 125ºC
T
J
= 25ºC
Fig. 11. Gate Charge
0
2
4
6
8
10
0 20 40 60 80 100 120 140
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 325V
I
D
= 32A
I
G
= 10mA
Fig. 12. Capacitance
10
100
1,000
10,000
100,000
1 10 100 1000
V
DS
- Volts
Capacitance - PicoFarad
s
f
= 1 MHz
C
iss
C
rss
C
oss
© 2015 IXYS CORPORATION, All Rights Reserved
IXYS REF: T_64N65X(J8-R4T4) 6-17-15-A
IXTH64N65X
Fig. 15. Maximum Transient Thermal Impedance
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
Fig. 14. Forward-Bias Safe Operating Area
0.1
1
10
100
1000
10 100 1,000
V
DS
- Volts
I
D
- Amperes
T
J
= 150ºC
T
C
= 25ºC
Single Pulse
25µs
10ms
100µs
R
DS(
on
)
Limit
100ms
DC
1ms
Fig. 13. Output Capacitance Stored Energy
0
5
10
15
20
25
30
35
40
45
50
0 100 200 300 400 500 600
V
DS
- Volts
E
OSS
- MicroJoules
P1-P3P4-P5

IXTH64N65X

Mfr. #:
Buy IXTH64N65X
Manufacturer:
Littelfuse
Description:
MOSFET 650V/64A Power MOSFET
Lifecycle:
New from this manufacturer.
Delivery:
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