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BC817K-16R

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24
Nexperia
BC817K series
45 V, 500 mA NPN general-purpose transistors
BC817K_SER All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2018. All rights reserved.
Product data sheet Rev. 2 — 6 March 2018
7 / 24
7 Characteristics
Table 8. Characteristics
T
amb
= 25 °C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V
(BR)CBO
collector-base
breakdown voltage
I
C
= 100 µA; I
E
= 0 A 50 - - V
V
(BR)CEO
collector-emitter
breakdown voltage
I
C
= 10 mA; I
B
= 0 A 45 - - V
V
(BR)EBO
emitter-base
breakdown voltage
I
E
= 100 µA; I
C
= 0 A 5 - - V
V
CB
= 25 V; I
E
= 0 A - - 100 nAI
CBO
collector-base
cut-off current
V
CB
= 25 V; I
E
= 0 A; T
j
= 150 °C - - 5 μA
I
EBO
emitter-base
cut-off current
V
EB
= 5 V; I
C
= 0 A - - 100 nA
DC current gain
BC817K-16 V
CE
= 1 V; I
C
= 100 mA
[1]
100 - 250
BC817K-25 V
CE
= 1 V; I
C
= 100 mA
[1]
160 - 400
BC817K-40 V
CE
= 1 V; I
C
= 100 mA
[1]
250 - 600
h
FE
BC817K-16, -25, -40 V
CE
= 1 V; I
C
= 500 mA
[1]
40 - -
V
CEsat
collector-emitter
saturation voltage
I
C
= 500 mA; I
B
= 50 mA
[1]
- - 700 mV
V
BEsat
base-emitter saturation
voltage
I
C
= 500 mA; I
B
= 50 mA
[1]
- - 1.2 V
V
BE
base-emitter voltage V
CE
= 1 V; I
C
= 500 mA
[1]
- - 1.2 V
f
T
transition frequency V
CE
= 5 V; I
C
= 10 mA; f = 100 MHz 100 - - MHz
C
c
collector capacitance V
CB
= 10 V; I
E
= i
e
= 0 A; f = 1 MHz - 3 - pF
emitter capacitance
BC817K-16 - 44 - pF
BC817K-25 - 39 - pF
C
e
BC817K-40
V
EB
= 0.5 V; I
C
= i
c
= 0 A; f = 1 MHz
- 39 - pF
[1] pulsed; t
p
≤ 300 μs; δ ≤ 0.02
Nexperia
BC817K series
45 V, 500 mA NPN general-purpose transistors
BC817K_SER All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2018. All rights reserved.
Product data sheet Rev. 2 — 6 March 2018
8 / 24
aaa-027362
100
200
300
h
FE
0
I
C
(mA)
10
-1
10
3
10
2
1 10
(1)
(2)
(3)
(4)
(5)
(6)
(7)
V
CE
= 1 V
(1) T
amb
= 150 °C
(2) T
amb
= 125 °C
(3) T
amb
= 100 °C
(4) T
amb
= 85 °C
(5) T
amb
= 25 °C
(6) T
amb
= -40 °C
(7) T
amb
= -55 °C
Figure 7. BC817K-16: DC current gain as a function of
collector current; typical values
aaa-027363
100
150
50
200
250
h
FE
0
I
C
(mA)
10
-1
10
3
10
2
1 10
(1)
(2)
(3)
T
amb
= 25 °C
(1) V
CE
= 5 V
(2) V
CE
= 2 V
(3) V
CE
= 1 V
Figure 8. BC817K-16: DC current gain as a function of
collector current; typical values
Nexperia
BC817K series
45 V, 500 mA NPN general-purpose transistors
BC817K_SER All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2018. All rights reserved.
Product data sheet Rev. 2 — 6 March 2018
9 / 24
aaa-027364
0.4
0.8
1.2
V
BE
(V)
0
I
C
(mA)
10
-1
10
3
10
2
1 10
(2)
(4)
(6)
(3)
(7)
(1)
(5)
V
CE
= 1 V
(1) T
amb
= -55 °C
(2) T
amb
= -40°C
(3) T
amb
= 25 °C
(4) T
amb
= 85 °C
(5) T
amb
= 100 °C
(6) T
amb
= 125 °C
(7) T
amb
= 150 °C
Figure 9. BC817K-16: Base-emitter voltage as a function
of collector current; typical values
aaa-027365
0.6
0.8
1.0
V
BE
(V)
0.4
I
C
(mA)
10
-1
10
3
10
2
1 10
(2)
(3)
(1)
T
amb
= 25 °C
(1) V
CE
= 1 V
(2) V
CE
= 2 V
(3) V
CE
= 5 V
Figure 10. BC817K-16: Base-emitter voltage as a
function of collector current; typical values
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24

BC817K-16R

Mfr. #:
Buy BC817K-16R
Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT 45 V, 500 mA NPN general-purpose transistors
Lifecycle:
New from this manufacturer.
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