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BC817K-40R
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
P16-P18
P19-P21
P22-P24
Nexperia
BC817K series
45 V, 500 mA NPN general-purpose transistors
BC817K_SER
All information provided in this document is subject to legal disclaimers.
© Nexperia B.V. 2018. All rights reserved.
Product data sheet
Rev. 2 — 6 March 2018
7 / 24
7
Characteristics
Table 8. Characteristics
T
amb
= 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
V
(BR)CBO
collector-base
breakdown voltage
I
C
= 100 µA; I
E
= 0 A
50
-
-
V
V
(BR)CEO
collector-emitter
breakdown voltage
I
C
= 10 mA; I
B
= 0 A
45
-
-
V
V
(BR)EBO
emitter-base
breakdown voltage
I
E
= 100 µA; I
C
= 0 A
5
-
-
V
V
CB
= 25 V; I
E
= 0 A
-
-
100
nA
I
CBO
collector-base
cut-off current
V
CB
= 25 V; I
E
= 0 A; T
j
= 150 °C
-
-
5
μA
I
EBO
emitter-base
cut-off current
V
EB
= 5 V; I
C
= 0 A
-
-
100
nA
DC current gain
BC817K-16
V
CE
= 1 V; I
C
= 100 mA
[1]
100
-
250
BC817K-25
V
CE
= 1 V; I
C
= 100 mA
[1]
160
-
400
BC817K-40
V
CE
= 1 V; I
C
= 100 mA
[1]
250
-
600
h
FE
BC817K-16, -25, -40
V
CE
= 1 V; I
C
= 500 mA
[1]
40
-
-
V
CEsat
collector-emitter
saturation voltage
I
C
= 500 mA; I
B
= 50 mA
[1]
-
-
700
mV
V
BEsat
base-emitter saturation
voltage
I
C
= 500 mA; I
B
= 50 mA
[1]
-
-
1.2
V
V
BE
base-emitter voltage
V
CE
= 1 V; I
C
= 500 mA
[1]
-
-
1.2
V
f
T
transition frequency
V
CE
= 5 V; I
C
= 10 mA; f = 100 MHz
100
-
-
MHz
C
c
collector capacitance
V
CB
= 10 V; I
E
= i
e
= 0 A; f = 1 MHz
-
3
-
pF
emitter capacitance
BC817K-16
-
44
-
pF
BC817K-25
-
39
-
pF
C
e
BC817K-40
V
EB
= 0.5 V; I
C
= i
c
= 0 A; f = 1 MHz
-
39
-
pF
[1]
pulsed; t
p
≤ 300 μs; δ ≤ 0.02
Nexperia
BC817K series
45 V, 500 mA NPN general-purpose transistors
BC817K_SER
All information provided in this document is subject to legal disclaimers.
© Nexperia B.V. 2018. All rights reserved.
Product data sheet
Rev. 2 — 6 March 2018
8 / 24
aaa-027362
100
200
300
h
FE
0
I
C
(mA)
10
-1
10
3
10
2
1
10
(1)
(2)
(3)
(4)
(5)
(6)
(7)
V
CE
= 1 V
(1) T
amb
= 150 °C
(2) T
amb
= 125 °C
(3) T
amb
= 100 °C
(4) T
amb
= 85 °C
(5) T
amb
= 25 °C
(6) T
amb
= -40 °C
(7) T
amb
= -55 °C
Figure 7. BC817K-16: DC current gain as a function of
collector current; typical values
aaa-027363
100
150
50
200
250
h
FE
0
I
C
(mA)
10
-1
10
3
10
2
1
10
(1)
(2)
(3)
T
amb
= 25 °C
(1) V
CE
= 5 V
(2) V
CE
= 2 V
(3) V
CE
= 1 V
Figure 8. BC817K-16: DC current gain as a function of
collector current; typical values
Nexperia
BC817K series
45 V, 500 mA NPN general-purpose transistors
BC817K_SER
All information provided in this document is subject to legal disclaimers.
© Nexperia B.V. 2018. All rights reserved.
Product data sheet
Rev. 2 — 6 March 2018
9 / 24
aaa-027364
0.4
0.8
1.2
V
BE
(V)
0
I
C
(mA)
10
-1
10
3
10
2
1
10
(2)
(4)
(6)
(3)
(7)
(1)
(5)
V
CE
= 1 V
(1) T
amb
= -55 °C
(2) T
amb
= -40°C
(3) T
amb
= 25 °C
(4) T
amb
= 85 °C
(5) T
amb
= 100 °C
(6) T
amb
= 125 °C
(7) T
amb
= 150 °C
Figure 9. BC817K-16: Base-emitter voltage as a function
of collector current; typical values
aaa-027365
0.6
0.8
1.0
V
BE
(V)
0.4
I
C
(mA)
10
-1
10
3
10
2
1
10
(2)
(3)
(1)
T
amb
= 25 °C
(1) V
CE
= 1 V
(2) V
CE
= 2 V
(3) V
CE
= 5 V
Figure 10. BC817K-16: Base-emitter voltage as a
function of collector current; typical values
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
P16-P18
P19-P21
P22-P24
BC817K-40R
Mfr. #:
Buy BC817K-40R
Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT 45 V, 500 mA NPN general-purpose transistors
Lifecycle:
New from this manufacturer.
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