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AON6450L

P1-P3P4-P6P7-P7
AON6450L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTIC
S
17
5
2
10
0
18
40
0
2
4
6
8
10
0 1020304050
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
V
GS
(Volts)
0
500
1000
1500
2000
2500
3000
3500
0 102030405060
V
DS
(Volts)
Figure 8: Capacitance Characteristics
Capacitance (pF)
C
iss
0
50
100
150
200
250
300
350
400
0.0001 0.001 0.01 0.1 1 10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
Power (W)
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Z
θ
JC
Normalized Transient
Thermal Resistance
C
oss
C
rss
V
DS
=50V
I
D
=20A
Single Pulse
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θJC
.R
θJC
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J(Max)
=150°C
T
C
=25°C
10
µ
s
0.0
0.1
1.0
10.0
100.0
1000.0
0.01 0.1 1 10 100 1000
V
DS
(Volts)
I
D
(Amps)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
10
µ
s
1ms
DC
R
DS(ON)
limited
T
J(Max)
=150°C
T
C
=25°C
1
00
µ
s
R
θJC
=1.5°C/W
Rev 0: January 2009 www.aosmd.com Page 4 of 7
AON6450L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTIC
S
17
5
2
10
0
18
40
0.001
0.01
0.1
1
10
0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note G)
Z
θ
JA
Normalized Transient
Thermal Resistance
Single Pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0
10
20
30
40
50
60
0.000001 0.00001 0.0001
Time in avalanche, t
A
(s)
Figure 12: Single Pulse Avalanche capability (Note
C)
I
AR
(A) Peak Avalanche Current
0
10
20
30
40
50
60
70
80
90
0 25 50 75 100 125 150
T
CASE
(°C)
Figure 13: Power De-rating (Note F)
Power Dissipation (W)
0
10
20
30
40
50
60
0 25 50 75 100 125 150
T
CASE
(°C)
Figure 14: Current De-rating (Note F)
Current rating I
D
(A)
T
A
=25°C
1
10
100
1000
10000
0.0001 0.01 1 100 10000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note G)
Power (W)
T
A
=25°C
T
A
=150°C
T
A
=100°C
T
A
=125°C
R
θJA
=55°C/W
Rev 0: January 2009 www.aosmd.com Page 5 of 7
AON6450L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTIC
S
0
30
60
90
120
150
180
210
0 5 10 15 20 25 30
I
S
(A)
Figure 17: Diode Reverse Recovery Charge and
Peak Current vs. Conduction Current
Q
rr
(nC)
8
10
12
14
16
18
20
22
24
26
I
rm
(A)
di/dt=800A/µs
125ºC
125ºC
25ºC
25ºC
Q
rr
I
rm
0
30
60
90
120
150
180
210
0 200 400 600 800 1000
di/dt (A/µs)
Figure 19: Diode Reverse Recovery Charge and
Peak Current vs. di/dt
Q
rr
(nC)
2
6
10
14
18
22
26
I
rm
(A)
125ºC
125ºC
25ºC
25ºC
I
s
=20A
Q
rr
I
rm
0
5
10
15
20
25
30
0 5 10 15 20 25 30
I
S
(A)
Figure 18: Diode Reverse Recovery Time and
Softness Factor vs. Conduction Current
t
rr
(ns)
0
0.4
0.8
1.2
1.6
2
S
di/dt=800A/µs
125ºC
125ºC
25ºC
25ºC
t
rr
S
0
5
10
15
20
25
30
35
40
0 200 400 600 800 1000
di/dt (A/µs)
Figure 20: Diode Reverse Recovery Time and
Softness Factor vs. di/dt
t
rr
(ns)
0
0.5
1
1.5
2
S
125ºC
25ºC
25ºC
125º
I
s
=20A
t
rr
S
Rev 0: January 2009 www.aosmd.com Page 6 of 7
P1-P3P4-P6P7-P7

AON6450L

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MOSFET N-CH 100V 8DFN
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