SSM3K106TU(TE85L) Datasheet SSM3K106TU(TE85L) | P1-P3

SSM3K106TU

2014-03-01

1

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

SSM3K106TU

High-Speed Switching Applications

• 4 V drive

• Low ON-resistance: R

on

= 530 mΩ (max) (@V

GS

= 4 V)

R

on

= 310 mΩ (max) (@V

GS

= 10 V)

Absolute Maximum Ratings

(Ta = 25°C)

Characteristic Symbol Rating Unit

Drain-source voltage V

DS

20 V

Gate-source voltage V

GSS

± 20 V

DC I

D

1.2

Drain current

Pulse I

DP

2.4

A

P

D (Note 1)

800

Drain power dissipation

P

D (Note 2)

500

mW

Channel temperature T

ch

150 °C

Storage temperature range T

stg

−55 to 150 °C

Note: Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure

rate, etc).

Note 1: Mounted on a ceramic board.

(25.4 mm × 25.4 mm × 0.8 mm, Cu Pad: 645 mm

2

)

Note 2: Mounted on an FR4 board.

(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm

2

)

Electrical Characteristics

(Ta = 25°C)

Characteristic Symbol Test Conditions Min Typ. Max Unit

Drain-source breakdown voltage V

(BR) DSS

I

D

= 1 mA, V

GS

= 0 20 ⎯ ⎯ V

Drain cutoff current I

DSS

V

DS

= 20 V, V

GS

= 0 ⎯ ⎯ 1 μA

Gate leakage current I

GSS

V

GS

= ±20 V, V

DS

= 0 ⎯ ⎯ ±1 μA

Gate threshold voltage V

th

V

DS

= 5 V, I

D

= 0.1 mA 1.1 ⎯ 2.3 V

Forward transfer admittance ⏐Y

fs

⏐ V

DS

= 5 V, I

D

= 0.6 A (Note 3) 0.58 1.16 ⎯ S

I

D

= 0.6 A, V

GS

= 10 V (Note 3) ⎯ 230 310

Drain-source ON-resistance R

DS (ON)

I

D

= 0.6 A, V

GS

= 4 V (Note 3) ⎯ 390 530

mΩ

Input capacitance C

iss

V

DS

= 10 V, V

GS

= 0, f = 1 MHz ⎯ 36 ⎯ pF

Output capacitance C

oss

V

DS

= 10 V, V

GS

= 0, f = 1 MHz ⎯ 30 ⎯

pF

Reverse transfer capacitance C

rss

V

DS

= 10 V, V

GS

= 0, f = 1 MHz ⎯ 10 ⎯

pF

Turn-on time t

on

⎯ 21 ⎯

Switching time

Turn-off time t

off

V

DD

= 10 V, I

D

= 0.6 A,

V

GS

= 0 to 4 V, R

G

= 10 Ω

⎯

8 ⎯

ns

Drain-source forward voltage V

DSF

I

D

= −1.2 A, V

GS

= 0 V (Note 3)

⎯ −1.0 −1.4 V

Note 3: Pulse test

Unit: mm

JEDEC ―

JEITA ―

TOSHIBA 2-2U1A

Weight: 6.6 mg (typ.)

1: Gate

2: Source

3: Drain

-0.05

1.7±0.1

2.1±0.1

0.65±0.05

1

2

2.0±0.1

3

0.7±0.05

+0.1

0.3

0.166±0.05

UFM

Start of commercial production

2005-02

SSM3K106TU

2014-03-01

2

Switching Time Test Circuit

(a) Test Circuit (b) V

IN

Marking Equivalent Circuit

(top view)

Note

V

th

can be expressed as the voltage between gate and source when the low operating current value is I

D

= 0.1 mA for

this product. For normal switching operation, V

GS

(on)

requires a higher voltage than V

th,

and V

GS (off)

requires a lower

voltage than V

th.

(The relationship can be established as follows: V

GS (off)

< V

th

< V

GS (on).

)

Take this into consideration when using the device.

Handling Precaution

When handling individual devices that are not yet mounted on a circuit board, be sure that the environment is

protected against electrostatic discharge. Operators should wear anti-static clothing, and containers and other objects

that come into direct contact with devices should be made of anti-static materials.

(c) V

OUT

V

DD

= 10 V

R

G

= 10 Ω

Duty ≤ %

V

IN

: t

r

, t

f

< 5 ns

Common Source

Ta = 25°C

V

DD

OUT

IN

4 V

0

10 μs

R

G

t

f

t

on

90%

10%

4 V

0 V

10%

90%

t

off

t

r

V

DD

V

DS

(

ON

)

KK6

1 2

3

1 2

3

SSM3K106TU

2014-03-01

3

Drain-Source Voltage V

DS

(V)

I

D

– V

DS

Drain Current I

D

(A)

0

2

0

0.4 0.8 1.2 1.6

1.5

0.5

1

6 V

2.5

2

3 V

Common Source

Ta = 25°C

2.5 V

4 V

V

GS

= 10 V

Gate-Source Voltage V

GS

(V)

I

D

– V

GS

Drain Current I

D

(mA)

100

0.0001

0

1

10

0.01

0.1

0.001

4 0.5 1.5

−25°C

Common Source

V

DS

= 5 V

Ta = 100°C

25°C

1 3.5 3 2.5 2 4.5

Drain-Source ON Resistance

R

DS (ON)

(Ω)

0 4 10

Gate-Source Voltage V

GS

(V)

8

0

0.2

0.6

0.8

1

R

DS (ON)

– V

GS

25°C

I

D

= 0.6 A

Common Source

6 2

0.4

Ta = 100°C

−25°C

Drain Current I

D

(A)

R

DS (ON)

– I

D

1

0

0.2

1

0.4

0.6

0.8

10 V

Drain-Source ON Resistance

R

DS (ON)

(Ω)

0 0.5 1.5 2 2.5

Common Source

Ta = 25°C

V

GS

= 4 V

Ambient Temperature Ta (°C)

V

th

– Ta

Gate Threshold Voltage V

th

(V)

2

0

−25 0 25 150

0.4

0.8

1.6

50 75 100 125

1.2

Common Source

V

DS

= 5V

I

D

= 0.1mA

Ambient Temperature Ta (°C)

R

DS (ON)

– Ta

Drain-Source ON Resistance

R

DS (ON)

(Ω)

Common Source

I

D

= 0.6 A

1

0

−25

V

GS

= 4 V

0 50 150

0.2

0.4

0.6

0.8

100

10 V

25 75 125

SSM3K106TU(TE85L)

SSM3K106TU(TE85L)

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