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SUD50N06-08H-E3

P1-P3P4-P5
Vishay Siliconix
SUD50N06-08H
Document Number: 73160
S-71661-Rev. B, 06-Aug-07
www.vishay.com
1
New Product
N-Channel 60-V (D-S) 175 °C MOSFET
FEATURES
• TrenchFET
®
Power MOSFET
• 175 °C Junction Temperature
• 100 % R
g
Tested
• High Threshold at High Temperature
PRODUCT SUMMARY
V
DS
(V) r
DS(on)
(Ω)
I
D
(A)
c
Q
g
(Typ)
60
0.0078 at V
GS
= 10 V
93 94
TO-252
SGD
Top View
Drain Connected to Tab
Ordering Information: SUD50N06-08H0-E3 (Lead (Pb)-free)
N-Channel MOSFE
T
G
D
S
Notes:
a. Surface Mounted on 1" x 1" FR4 Board.
b. See SOA curve for voltage derating.
c. Calculate continuous current based on maximum allowable junction temperature when using infinite heat sink. Package limitation current is 50 A.
ABSOLUTE MAXIMUM RATINGS T
A
= 25 °C, unless otherwise noted
Parameter Symbol Limit Unit
Drain-Source Voltage
V
DS
60
V
Gate-Source Voltage
V
GS
± 20
Continuous Drain Current (T
J
= 175 °C)
b
T
C
= 25 °C
I
D
93
c
A
T
C
= 125 °C
54
c
Pulsed Drain Current
I
DM
100
Continuous Source Current (Diode Conduction)
I
S
91
c
Avalanche Current, Single Pulse
I
AS
50
Avalanche Energy L = 0.1 mH
E
AS
125 mJ
Maximum Power Dissipation
T
C
= 25 °C
P
D
136
b
W
T
A
= 25 °C
3
a
Operating Junction and Storage Temperature Range
T
J
, T
stg
- 55 to 175 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Junction-to-Ambient
a
t ≤ 10 sec
R
thJA
15 18
°C/W
Steady State 40 50
Junction-to-Case
R
thJC
0.85 1.1
RoHS
COMPLIANT
www.vishay.com
2
Document Number: 73160
S-71661-Rev. B, 06-Aug-07
Vishay Siliconix
SUD50N06-08H
New Product
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS T
J
= 25 °C, unless otherwise noted
Parameter Symbol Test Conditions Min
Typ
a
Max Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250 µA
60
V
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 µA
3.4 4.5
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
= ± 20 V
± 100 nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 60 V, V
GS
= 0 V
1
µA
V
DS
= 60 V, V
GS
= 0 V, T
J
= 125 °C
50
V
DS
= 60 V, V
GS
= 0 V, T
J
= 175 °C
250
On-State Drain Current
b
I
D(on)
V
DS
= 5 V, V
GS
= 10 V
50 A
Drain-Source On-State Resistance
b
r
DS(on)
V
GS
= 10 V, I
D
= 20 A
0.0065 0.0078
Ω
V
GS
= 10 V, I
D
= 20 A, T
J
= 125 °C
0.013
V
GS
= 10 V, I
D
= 20 A, T
J
= 175 °C
0.0156
Forward Transconductance
b
g
fs
V
DS
= 15 V, I
D
= 20 A
25 S
Dynamic
a
Input Capacitance
C
iss
V
GS
= 0 V, V
DS
= 25 V, F = 1 MHz
7000
pFOutput Capacitance
C
oss
450
Reverse Transfer Capacitance
C
rss
240
Gate Resistance
R
g
f = 1 MHz 0.75 1.5 2.3 Ω
Total Gate Charge
c
Q
g
V
DS
= 30 V, V
GS
= 10 V, I
D
= 50 A
94 145
nC
Gate-Source Charge
c
Q
gs
35
Gate-Drain Charge
c
Q
gd
20
Tur n - O n D e l ay Time
c
t
d(on)
V
DD
= 30 V, R
L
= 0.6 Ω
I
D
≅ 50 A, V
GEN
= 10 V, R
g
= 2.5 Ω
28 45
ns
Rise Time
c
t
r
13 20
Turn-Off Delay Time
c
t
d(off)
50 75
Fall Time
c
t
f
10 15
Source-Drain Diode Ratings and Characteristics (T
C
= 25 °C)
Pulsed Current
I
SM
100 A
Diode Forward Voltage
b
V
SD
I
F
= 50 A, V
GS
= 0 V
1.0 1.5 V
Source-Drain Reverse Recovery Time
t
rr
I
F
= 50 A, di/dt = 100 A/µs
45 70 ns
Document Number: 73160
S-71661-Rev. B, 06-Aug-07
www.vishay.com
3
Vishay Siliconix
SUD50N06-08H
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Output Characteristics
Transconductance
Capacitance
0
20
40
60
80
100
0246810
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
V
GS
= 10 thru 6 V
5 V
0
25
50
75
100
125
150
0 102030405060
- Transconductance (S)g
fs
T
C
= - 55 °C
25 °C
125 °C
I
D
- Drain Current (A)
0
1000
2000
3000
4000
5000
6000
7000
8000
9000
0 102030405060
V
DS
- Drain-to-Source Voltage (V)
C - Capacitance (pF)
C
oss
C
iss
C
rss
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
0
20
40
60
80
100
0123456
V
GS
- Gate-to-Source Voltage (V)
- Drain Current (A)I
D
-55 °C
T
C
= 125 °C
25 °C
0.000
0.003
0.006
0.009
0.012
0.015
0 20406080100
- On-Resistance (Ω)
I
D
- Drain Current (A)
r
DS(on)
V
GS
= 10 V
0
4
8
12
16
20
0 40 80 120 160 20
0
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
V
DS
= 30 V
I
D
= 50 A
P1-P3P4-P5

SUD50N06-08H-E3

Mfr. #:
Buy SUD50N06-08H-E3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 60V 93A 136W 7.8mohm @ 10V
Lifecycle:
New from this manufacturer.
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