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BAP64Q,125

P1-P3P4-P6P7-P9P10-P12P13-P13
1. Product profile
1.1 General description
Quad PIN diode in a SOT753 package.
1.2 Features and benefits
4 PIN diodes in a SOT753 package
300 kHz to 4 GHz
High linearity
Low insertion loss
reduction in part count
Low diode capacitance
Low diode forward resistance
1.3 Applications
RF attenuators
Broadband system applications
General purpose Voltage Controlled Attenuators for high linearity applications
2. Pinning information
3. Ordering information
BAP64Q
Quad PIN diode attenuator
Rev. 1 — 7 October 2010 Product data sheet
Table 1. Discrete pinning
Pin Description Simplified outline Graphic symbol
1RF in
2 series bias
3RF out
4 shunt 1 bias
5 shunt 2 bias
132
45
sym143
54
123
Table 2. Ordering information
Type number Package
Name Description Version
BAP64Q SC-74A plastic surface-mounted package; 5 leads SOT753
BAP64Q All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 1 — 7 October 2010 2 of 13
NXP Semiconductors
BAP64Q
Quad PIN diode attenuator
4. Marking
5. Limiting values
[1] single diode.
6. Thermal characteristics
Table 3. Marking
Type number Marking code
BAP64Q A1
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
R
reverse voltage
[1]
-100V
I
F
forward current
[1]
-100mA
P
tot
total power dissipation T
sp
=90°C
[1]
-125mW
T
stg
storage temperature −65 +150 °C
T
j
junction temperature −65 +150 °C
Table 5. Thermal characteristics
Symbol Parameter Conditions Typ Unit
R
th(j-sp)
thermal resistance from junction to solder point 350 K/W
BAP64Q All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 1 — 7 October 2010 3 of 13
NXP Semiconductors
BAP64Q
Quad PIN diode attenuator
7. Characteristics
[1] Guaranteed on AQL basis: inspection level S4, AQL 1.0.
Table 6. Characteristics
T
j
= 25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Per diode
V
F
forward voltage I
F
= 50 mA - 0.95 1.1 V
I
R
reverse current V
R
=20V - - 1 μA
V
R
=100V - - 10 μA
C
d
diode capacitance f = 1 MHz; see Figure 1
V
R
= 0 V - 0.52 - pF
V
R
= 1 V - 0.37 - pF
V
R
=20V - 0.23 0.35 pF
r
D
diode forward resistance f = 100 MHz; see Figure 2
I
F
=0.5mA
[1]
-2040Ω
I
F
=1mA
[1]
-1020Ω
I
F
=10mA
[1]
-2 3.8Ω
I
F
= 100 mA
[1]
- 0.7 1.35 Ω
τ
L
charge carrier life time when switched from
I
F
=10mAtoI
R
=6mA;
R
L
=100Ω;
measured at I
R
=3mA
-1.55- μs
f=1MHz; T
j
=25°C. f = 100 MHz; T
j
=25°C.
Fig 1. Diode capacitance as a function of reverse
voltage; typical values.
Fig 2. Diode forward resistance as a function of
forward current; typical values.
001aam721
020
500
0
100
200
300
400
4
C
d
(fF)
V
R
(V)
81216
001aam722
10
2
10
1
10
−1
10
−1
1
I
F
(mA)
r
D
(Ω)
10 10
2
P1-P3P4-P6P7-P9P10-P12P13-P13

BAP64Q,125

Mfr. #:
Buy BAP64Q,125
Manufacturer:
NXP Semiconductors
Description:
PIN Diodes QUAD 100V 0.52pF
Lifecycle:
New from this manufacturer.
Delivery:
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