Expand menu
Hello, Sign in
My Account
0
Cart
Home
Products
Sensors
Semiconductors
Passive Components
Connectors
Power
Electromechanical
Optoelectronics
Circuit Protection
Integrated Circuits - ICs
Main Products
Manufacturers
Blog
Services
About OMO
About Us
Contact Us
Check Stock
STB40NS15T4
P1-P3
P4-P6
P7-P9
P10-P12
P13-P13
Electrical ch
aracteristics
STB40NS15
4/13
2 Electrical
characteristics
(T
CASE
=25°C unless otherwise specified)
T
able 5.
On/off state
s
Symbol
P
arameter
T
es
t conditions
Min.
T
yp.
Max.
Unit
V
(BR)DSS
Drain-source
breakdo
wn volta
ge
I
D
= 250µA, V
GS
=0
150
V
I
DSS
Zero gate voltage
drain cur
rent (V
GS
= 0)
V
DS
= Max rating
V
DS
= Max rating,
T
C
= 125°C
1
10
µA
µA
I
GSS
Gate-body leakage
current (V
DS
= 0)
V
GS
= ± 20V
±100
nA
V
GS(th)
Gate threshold voltage
V
DS
= V
GS
, I
D
= 250µA
2
3
4
V
R
DS(on)
Static drain-source on
resistance
V
GS
= 10V
, I
D
= 20A
0.045
0.052
Ω
T
able 6.
Dynamic
Symbol
P
arameter
T
est conditions
Min.
T
yp.
Max.
Unit
g
fs
(1)
1.
Pulsed: Pulse duration =
300 µs, duty cycle 1.5 %.
Fo
r
wa
r
d
transconductance
V
DS
= 10V
,
I
D
= 20A
29.4
S
C
iss
C
oss
C
rss
Input capacita
nce
Output capacitance
Re
verse transf
er
capacitance
V
DS
= 25V
, f = 1MHz,
V
GS
= 0
2420
380
160
pF
pF
pF
t
d(on)
t
r
t
d(off)
t
f
T
urn
-on delay time
Rise time
T
urn-off delay time
Fa
l
l
t
i
m
e
V
DD
= 75V
, I
D
= 20A
R
G
=4
.
7
Ω
V
GS
= 10V
(see
Figure
13
)
25
45
85
35
ns
ns
ns
ns
Q
g
Q
gs
Q
gd
T
otal gate charge
Gate-source charge
Gate-drain charge
V
DD
= 120V
, I
D
= 40A,
V
GS
= 10V
, R
G
=4
.
7
Ω
(see
Figure
14
)
100
17
47
110
nC
nC
nC
Obsolete Product(s) - Obsolete Product(s)
STB40NS15
Electrical ch
aracterist
ics
5/13
T
able 7.
Source drain diode
Symbol
Parameter
T
est conditions
Min.
T
yp.
Max.
Unit
I
SD
I
SDM
(1)
1.
Pulse width limited by safe operating area.
Source-drain current
Source-drain current
(pulsed)
40
160
A
A
V
SD
(2)
2.
Pulsed: Pulse duration =
300 µs, duty cycle 1.5 %
F
orward on v
oltage
I
SD
= 40A, V
GS
= 0
1.5
V
t
rr
Q
rr
I
RRM
Rev
erse
recovery
time
Re
verse reco
ver
y charge
Re
verse recov
er
y current
I
SD
= 40A, di/dt = 100A/µs
,
V
DD
= 100V
, T
j
= 150°C
(see
Figure
15
)
270
200
1.5
ns
nC
A
Obsolete Product(s) - Obsolete Product(s)
Electrical ch
aracteristics
STB40NS15
6/13
2.1 Electrical
characteri
stics (curves)
Figure 2.
Saf
e operating area
Figure 3.
T
hermal impedance
Figure 4.
Outpu
t characteri
sics
Figure 5.
T
ransfer charac
teristics
Figure 6.
T
ransconductance
Figure 7.
St
atic drain-source on res
i
stance
Obsolete Product(s) - Obsolete Product(s)
P1-P3
P4-P6
P7-P9
P10-P12
P13-P13
STB40NS15T4
Mfr. #:
Buy STB40NS15T4
Manufacturer:
STMicroelectronics
Description:
MOSFET N-Ch 150 Volt 40 Amp
Lifecycle:
New from this manufacturer.
Delivery:
DHL
FedEx
Ups
TNT
EMS
Payment:
T/T
Paypal
Visa
MoneyGram
Western
Union
Products related to this Datasheet
STB40NS15T4
