V
RRM
= 50 V - 1000 V
I
F
=10 A
Features
• Types up to 1000 V V
RRM
• Ideal for printed circuit board
• Hi
h sur
e overload ratin
• Glass passivated chip junction
• High case dielectric strength 1500 V
RMS
Mechanical Data
Case: Molded plastic body over passivated junctions
Mounting position: Any
Silicon Bridge
Rectifier
• High temperature soldering guaranteed: 260⁰C/ 10
seconds, 0.375(9.5mm) lead length
GBU10A thru GBU10G
• Plastic package has Underwriters Laboratory
Flammabilit
Classification 94V-0
Terminals: Plated leads, solderable per MIL-STD-750
Method 2026 guaranteed
BU Packag
Parameter Symbol GBU10A GBU10B Unit
Repetitive peak reverse voltage
V
RRM
50 100 V
RMS reverse voltage
V
RMS
35 70 V
DC blocking voltage
V
DC
50 100 V
Continuous forward current
I
F
10 10 A
Operating temperature
T
j
-55 to 150 -55 to 150 °C
Storage temperature
T
stg
-55 to 150 -55 to 150 °C
Parameter Symbol GBU10A GBU10B Unit
Diode forward voltage 1.1 1.1
55
500 500
Thermal characteristics
Thermal resistance, junction -
case
R
thJC
2.2 2.2 °C/W
-55 to 150 -55 to 150
Conditions
T
C
= 25 °C, t
p
= 8.3 ms
400
280
400200
Surge non-repetitive forward
current, Half Sine Wave
I
F,SM
-55 to 150
GBU10G
55
GBU10D
2.2
V
R
= 50 V, T
j
= 125 °C
2.2
1.1 1.1
500
V
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
V
R
= 50 V, T
j
= 25 °C
I
F
= 10 A, T
j
= 25 °C
T
C
≤ 100 °C
Conditions
GBU10G
200
140
GBU10D
220 220
-55 to 150
Maximum ratings, at T
j
= 25 °C, unless otherwise specified
10 10
A220
Reverse current
I
R
V
F
220
μA
500
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