22
LTC4221
4221fa
supply voltages, the LTC4221 can drive any MOSFET rated
with 4.5V or 2.5V gate drive. For higher supply voltages up
to 13.5V, the LTC4221 can drive any MOSFET rated with
a 10V or 4.5V gate drive. The selected MOSFET should
fulfill two V
GS
criteria:
1. Positive V
GS
absolute maximum rating > LTC4221’s
maximum ΔV
GATE
.
2. Negative V
GS
absolute maximum rating > supply volt-
age. The gate of the MOSFET can discharge faster than
V
OUT
when shutting down the MOSFET with a large
C
LOAD
.
If one of the conditions cannot be met, an external zener
clamp shown on Figure 15 can be used. The clamp
network is connected from each channel’s GATE to the
V
OUT
pins. V
GS
is clamped in both directions and R
G
limits
the current flow into the GATE
n
pin’s internal zener clamp
during transient events.
A MOSFET with a V
GS
absolute maximum rating of ±20V
meets the two criteria for all the LTC4221 application ranges
from 1V to 13.5V. Typically most 10V gate rated MOSFETs
have V
GS
absolute maximum ratings of ±20V or greater, so
no external V
GS
zener clamp is needed. There are 4.5V gate
rated MOSFETs with V
GS
absolute maximum ratings of
±20V. In addition to the MOSFET gate drive rating and V
GS
absolute maximum rating, other criteria such as V
BDSS
,
I
D(MAX)
, R
DS(ON)
, P
D
, θ
JA
, T
J(MAX)
and maximum safe
operating area (SOA) should also be carefully reviewed.
V
BDSS
should exceed the maximum supply voltage inclu-
sive of spikes and ringing. I
D(MAX)
must exceed the maxi-
mum short-circuit current in the channel during a fault
condition. R
DS(ON)
determines the MOSFET V
DS
which to-
gether with V
RSENSE
yields an error in the V
OUT
voltage. For
example, at 1V V
CC2
, V
DS
+ V
RSENSE2
= 50mV gives a 5%
V
OUT2
error. At higher V
CC
voltages the V
DS
requirement can
be relaxed in which case the MOSFET’s thermal require-
ments (P
D
, T
J(MAX)
, SOA) may limit the value of R
DS(ON)
.
The power dissipated in the MOSFET is (I
LOAD
)
2
• R
DS(ON)
and this should be less than the maximum power dissipa-
tion, P
D
, allowed in that package. Given power dissipation,
the MOSFET junction temperature, T
J
can be computed
from the operating temperature (T
A
) and the MOSFET
package thermal resistance (θ
JA
). The operating T
J
should
be less than the T
J(MAX)
specification. The V
DS
• I
LOAD
figure must also be well within the manufacturer’s recom-
mended safe operating area (SOA) with sufficient margin.
These three thermal parameters must not be exceeded for
all conditions in a channel including normal mode opera-
tion, start-up with or without current limit, fault and
autoretry after a fault. To ensure a reliable design, fault
tests should be evaluated in the laboratory.
V
CC
Transient Protection
Good engineering practice calls for bypassing the supply
rail of any analog circuit. Bypass capacitors are often
placed at the supply connection of every active device, in
addition to one or more large value bulk bypass capacitors
per supply rail. If power is connected abruptly, the large
bypass capacitors slow the rate of rise of the supply
voltage and heavily damp any parasitic resonance of lead
or PC track inductance working against the supply bypass
capacitors.
The opposite is true for LTC4221 Hot Swap circuits
mounted on plug-in cards since controlling the surge
current to bypass capacitors at plug-in is the primary
motivation for the Hot Swap controller. In most cases,
there is no supply bypass capacitor present on the pow-
ered supply voltage side of the MOSFET switch. Although
wire harness, backplane and PCB trace inductances are
usually small, these can create large spikes when large
currents are suddenly drawn, cut off or limited. Abrupt
intervention can prevent subsequent damage caused by a
catastrophic fault but it does cause a large supply tran-
sient. These ringing transients appear as a fast edge on
APPLICATIO S I FOR ATIO
WUUU
*USER SELECTED VOLTAGE CLAMP
(A LOW BIAS CURRENT ZENER DIODE IS RECOMMENDED)
1N4688 (5V)
1N4692 (7V): LOGIC-LEVEL MOSFET
1N4695 (9V)
1N4702 (15V): STANDARD-LEVEL MOSFET
R
SENSE
GATE
4221 F15
Q1
R
G
200Ω
D1* D2*
V
CC
V
OUT
Figure 15. Gate Protection Zener Clamp
23
LTC4221
4221fa
the input supply line, exhibiting a peak overshoot to 2.5
times the steady-state value. This peak is followed by a
damped sinusoidal response whose duration and period
are dependent on the resonant circuit parameters. This
can cause detrimental damage to board components
unless measures are taken.
The energy stored in the lead/trace inductance is easily
controlled with snubbers and/or transient voltage sup-
pressors. Even when ferrite beads are used for electro-
magnetic interference (EMI) control, the low saturating
current of ferrite will not pose a major problem if the
transient voltage suppressors with adequate ratings are
used. The transient associated with a GATE turn off can be
controlled with a snubber and/or transient voltage sup-
pressor. Snubbers such as RC networks are effective
especially at low voltage supplies. The choice of RC is
usually determined experimentally. The value of the snub-
ber capacitor is usually chosen between 10 to 100 times
the MOSFET C
OSS
. The value of the snubber resistor is
typically between 3Ω to 100Ω. When the supply exceeds
7V or EMI beads exist in the wire harness, a transient
voltage suppressor and snubber are recommended to clip
off large spikes and reduce the ringing. For supply volt-
ages of 6V or below, a snubber network should be suffi-
cient to protect against transient voltages. These protection
networks should be mounted very close to each of
LTC4221’s two supply voltages using short lead lengths to
minimize lead inductance. This is shown schematically in
the Typical Application on the front page of this data sheet.
In many cases, a simple short-circuit test can be per-
formed to determine the need of the transient voltage
suppressor. Additional overvoltage protection is provided
by the FB
n
pins.
APPLICATIO S I FOR ATIO
WUUU
PCB Layout Considerations
A recommended layout for the SENSE resistors, the
power MOSFETs, V
CC
transient protection devices and
GATE drive components around the LTC4221 is shown in
Figure 16. For proper operation of the LTC4221’s elec-
tronic circuit breaker, a 4-wire Kelvin connection to each
SENSE resistor is used. Also, PCB layout for the external
N-channel MOSFETs emphasizes optimal thermal man-
agement of MOSFET power dissipation to keep θ
JA
as low
as possible. The V
CC
transient protection devices are
positioned close to the supply pins to reduce lead induc-
tance and thus overshoot voltage.
In Hot Swap applications where load currents can reach
10A or more, PCB track width must be appropriately sized
to keep track resistance and temperature rise to a mini-
mum. Consult Appendix A of LTC Application Note 69 for
details on sizing and calculating trace resistances as a
function of copper thickness.
In the majority of applications, it will be necessary to use
plated-through vias to make circuit connections from
component layers to power and ground layers internal to
the PC board. For 1oz copper foil plating, a good starting
point is 1A of DC current per via, making sure the via is
properly dimensioned so that solder completely fills any
void. For other plating thicknesses, check with your PCB
fabrication facility.
24
LTC4221
4221fa
APPLICATIO S I FOR ATIO
WUUU
Figure 16. Recommended Layout for LTC4221 R
SENSE
, Power MOSFETs and Feedback Networks
G
W
POWER MOSFET
SO-8
POWER MOSFET
SO-8
NOTE: DRAWING IS NOT TO SCALE
*ADDITIONAL DETAILS OMITTED FOR CLARITY
R
SENSE2
R
SENSE1
TRACK WIDTH W
CURRENT FLOW
TO LOAD
CHANNEL 2
OUTPUT
S
S
S
R
F3
R
F4
VIAS
BOTTOM LAYER
AND GND TRACE
VIAS
GND
TO
LOAD
D
D
D
D
LTC4221*
G
S
S
S
D
D
D
D
16
15
14
13
12
11
10
9
1
2
3
4
5
6
7
8
ON1
V
CC1
SENSE1
GATE1
FB1
PWRGD1
FAULT
FILTER
ON2
V
CC2
SENSE2
GATE2
FB2
PWRGD2
GND
TIMER
R
F2
R
F1
4221 F16
R4
R3
R1C
X1
R2
Z1
R
X1
R
X2
Z2
C
X2
W
CHANNEL 2
INPUT
CHANNEL 1
OUTPUT
CHANNEL 1
INPUT
GND
CURRENT FLOW
TO LOAD
CURRENT FLOW
TO LOAD
CURRENT FLOW
TO LOAD
W
C
TIMER
C
FILTER
APPE DIX
U
Table 1 lists some current sense resistors that can be used
with the circuit breaker. Table 2 lists some power MOSFETs
that are available. Table 3 lists the web sites of several
manufacturers. Since this information is subject to change,
please verify the part numbers with the manufacturer.
Table 1. Sense Resistor Selection Guide
CURRENT LIMIT VALUE PART NUMBER DESCRIPTION MANUFACTURER
1A LRF120601R020F 0.02
Ω
0.5W 1% Resistor
IRC-TT
2.5A WSL25127L000F 0.007
Ω
1W 1% Resistor
Vishay-Dale
3.3A WSL25126L000F 0.006
Ω
1W 1% Resistor
Vishay-Dale
5A WSL25124L000F 0.004
Ω
1W 1% Resistor
Vishay-Dale
10A WSL25122L000F 0.002
Ω
1W 1% Resistor
Vishay-Dale
2A LRF120601R010F 0.01
Ω
0.5W 1% Resistor
IRC-TT

LTC4221IGN#PBF

Mfr. #:
Manufacturer:
Analog Devices Inc.
Description:
Hot Swap Voltage Controllers 2x Hot Swap Cntr/Pwr Sequencer w/ 2x Spe
Lifecycle:
New from this manufacturer.
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